Даташит bs170 pdf ( datasheet )

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MMBF170 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
MMBF170 Datasheet (PDF)
BS170 Datasheet Download — Motorola Inc
BS170_D26Z Datasheet (PDF)
MMBF170 Datasheet (PDF)
Related Datasheets
BS107PT Datasheet (PDF)

MMBF170 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: MMBF170

Маркировка: 6Z

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.3
W

Предельно допустимое напряжение сток-исток (Uds): 60
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 3
V

Максимально допустимый постоянный ток стока (Id): 0.5
A

Максимальная температура канала (Tj): 150
°C

Сопротивление сток-исток открытого транзистора (Rds): 5
Ohm

Тип корпуса: SOT23

MMBF170
Datasheet (PDF)

Datasheet on semiconductor 2n7000

1.1. mmbf170lt1rev2d.pdf Size:98K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MMBF170LT1/D
TMOS FET Transistor
DRAIN
3
MMBF170LT1
NChannel
1
GATE
?
3
2
SOURCE
1
MAXIMUM RATINGS
2
Rating Symbol Value Unit
DrainSource Voltage VDSS 60 Vdc
CASE 31808, STYLE 21
SOT23 (TO236AB)
DrainGate Voltage VDGS 60 Vdc
GateSource Voltage
Continuous VGS 20 Vdc
Nonrepetitive (tp ? 50 ms) VGSM 40

1.2. mmbf170lt1.pdf Size:102K _motorola

1.3. bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf Size:1298K _fairchild_semi

March 2010
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect
■ High density cell design for low RDS(ON).
transistors are produced using Fairchild’s proprietary, high
■ Voltage controlled small signal switch.
cell density, DMOS technology. These products have been
designed to minimize on-s

1.4. mmbf170.pdf Size:126K _diodes

MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features Mechanical Data
• Low On-Resistance • Case: SOT-23
• Low Gate Threshold Voltage • Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Low Input Capacitance
• Moisture Sensitivity: Level 1 per J-STD-020C
• Fast Swi

1.5. mmbf170lt1-d.pdf Size:77K _onsemi

MMBF170LT1
Power MOSFET
500 mA, 60 V
N-Channel SOT-23
Features
http://onsemi.com
Pb-Free Packages are Available
500 mA, 60 V
MAXIMUM RATINGS
RDS(on) = 5 W
Rating Symbol Value Unit
Drain-Source Voltage VDSS 60 Vdc
Drain-Gate Voltage VDGS 60 Vdc
SOT-23
CASE 318
Gate-Source Voltage
STYLE 21
— Continuous VGS 20 Vdc
— Non-repetitive (tp ? 50 ms) VGSM 40 Vpk
Drain Current — Cont

Другие MOSFET… LS3955
, LS3956
, LS3958
, MEM554
, MEM554C
, MEM564C
, MEM610
, MEM614
, 2SK3568
, MNT-LB32N16
, MNT-LB32N16-C4
, MNT-LB32N20
, MNT-LB32N20-C4
, MTB30N06VL
, MTB30P06V
, MTB35N06ZL
, MTP10N10M
.

BS170 Datasheet Download — Motorola Inc

Номер произв

BS170

Описание

TMOS FET Switching(N-Channel-Enhancement)

Производители

Motorola Inc

логотип

1Page

Даташит viper22a pdf ( datasheet )

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BS170/D
TMOS FET Switching
N–Channel — Enhancement
BS170
1 DRAIN
2
GATE

3 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
— Continuous

— Non–repetitive (tp ≤ 50 µs)

Drain Current(1)

Total Device Dissipation @ TA = 25°C

Operating and Storage Junction
Temperature Range
VDS
VGS
VGSM
ID
PD
TJ, Tstg
60

± 20

± 40

0.5
350
– 55 to +150
Vdc
Vdc
Vpk
Adc
mW

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic
Symbol
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
IGSS
Drain–Source Breakdown Voltage

(VGS = 0, ID = 100 µAdc)

ON CHARACTERISTICS(2)
V(BR)DSS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(Th)
Static Drain–Source On Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
rDS(on)
Drain Cutoff Current
(VDS = 25 Vdc, VGS = 0 Vdc)
ID(off)
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mAdc)
SMALL– SIGNAL CHARACTERISTICS
gfs
Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Ciss
Turn–On Time
(ID = 0.2 Adc) See Figure 1
ton
Turn–Off Time
(ID = 0.2 Adc) See Figure 1
toff

v v1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.

Min
—
60
0.8
—
—
—
—
—
—
1
2
3
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
Typ Max Unit
0.01 10 nAdc
90 — Vdc
2.0 3.0 Vdc
1.8 5.0
Ω

— 0.5 µA

200 — mmhos
— 60 pF
4.0 10 ns
4.0 10 ns
REV 1

MMotootorroollaa,

Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1

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BS170

RESISTIVE SWITCHING
+25 V
Vin
PULSE GENERATOR
40 pF

50 Ω 50 Ω 1.0 MΩ

125 Ω

20 dB

50 Ω ATTENUATOR

TO SAMPLING SCOPE

50 Ω INPUT

Vout
OUTPUT
INVERTED
Vout
ton
90%
(Vin Amplititude 10 Volts)
10%

INPUT Vin

PULSE
WIDTH
toff
10%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
2.0
VDS = VGS

1.6 ID = 1.0 mA

1.2
0.8
0.4

50 0 50 100 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. VGS(th) Normalized versus Temperature
2.0
VGS = 10 V

1.6 9.0 V

8.0 V
1.2
7.0 V

0.8 6.0 V

5.0 V
0.4
4.0 V
0 1.0 2.0 3.0 4.0
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Region Characteristics
2.0
VGS = 10 V

1.6 9.0 V

8.0 V
1.2
7.0 V
0.8
6.0 V

0.4 5.0 V

4.0 V
0 10 20 30 40
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristics
100

80 VGS = 0 V

60
40
Ciss
20
Coss
Crss
0 10 20 30 40 50 60
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus
Drain–To–Source Voltage
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

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PACKAGE DIMENSIONS
BS170
R
SEATING
PLANE
AB
P
L
F
K
XX
H
V
G
C
1
N
N
D
J
SECTION X–X
CASE 029–04
(TO–226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX

A 0.175 0.205

B 0.170 0.210

C 0.125 0.165

D 0.016 0.022

F 0.016 0.019

G 0.045 0.055

H 0.095 0.105

J 0.015 0.020

K 0.500 –––

L 0.250 –––

N 0.080 0.105

P ––– 0.100

R 0.115 –––

V 0.135 –––

MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.41 0.55
0.41 0.48
1.15 1.39
2.42 2.66
0.39 0.50
12.70 –––
6.35 –––
2.04 2.66
––– 2.54
2.93 –––
3.43 –––
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3

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BS170_D26Z Datasheet (PDF)

1am smd транзистор даташит

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DISCRETE SEMICONDUCTORS
DATA SHEET
BS170
N-channel vertical D-MOS
transistor
April 1995
Product specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors Product specification
N-channel vertical D-MOS transistor BS170
DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode
Drain-source voltage VDS max. 60 V
vertical D-MOS transistor in TO-92
Gate-source volt

MMBF170 Datasheet (PDF)

1.1. mmbf170lt1rev2d.pdf Size:98K _motorola

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Related Datasheets

Номер в каталоге	Описание	Производители
BS170	TMOS FET Switching(N-Channel-Enhancement)	Motorola Inc
BS170	N-channel vertical D-MOS transistor	NXP
BS170	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)	Siemens Semiconductor Group
BS170	N-Channel Enhancement Mode Field Effect Transistor	Fairchild Semiconductor

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BS107PT Datasheet (PDF)

1.1. bs107pt.pdf Size:47K _diodes

N-CHANNEL ENHANCEMENT
PT BS107PT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 200 Volt VDS
VGS=
* RDS(on)=28Ω
10V
6V
D
4V
G
S
E-Line
TO92 Compatible
3V
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
8 10
Drain-Source Voltage VDS 200 V
Continuous Drain Current at Tamb=25°C ID 0.12 A
Pulsed Drain Current IDM 2A
Gate-Source Voltage VGS ±20 V
Power Dis

4.1. bs107pstoa bs107pstob bs107pstz.pdf Size:18K _update-mosfet

N-CHANNEL ENHANCEMENT
BS107P
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 200 Volt VDS
* RDS(on)=23Ω
D
G
S
REFER TO BS107PT FOR GRAPHS
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 200 V
Continuous Drain Current at Tamb=25°C ID 0.12 A
Pulsed Drain Current IDM 2A
Gate-Source Voltage VGS ±20 V
Power Dissipat

4.2. bs107p.pdf Size:25K _diodes