Datasheet on semiconductor 2n7000

Содержание:

H2N7000 Datasheet (PDF)
2N7000K Datasheet (PDF)
Статус
H2N7000 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
H2N7000 Datasheet (PDF)
TSM2N7000KCT Datasheet (PDF)
Datasheets

H2N7000 Datasheet (PDF)

1.1. h2n7000.pdf Size:51K _hsmc

Spec. No. : HE6267
HI-SINCERITY
Issued Date : 1993.09.17
Revised Date : 2006.08.10
MICROELECTRONICS CORP.
Page No. : 1/5
H2N7000
N-Channel Enhancement Mode Transistor
Description
The H2N7000 is designed for high voltage, high speed applications such as switching
regulators, converters, solenoid and relay drivers.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temp

1.2. h2n7000.pdf Size:423K _shantou-huashan

H2N7000
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These products have been designed to minimize on-state resistance While TO-92
provide rugged, reliable, and fast switching performance. These products
are particularly suited for low voltage, low current applications such
as small servo motor control, pow

4.1. h2n7002k.pdf Size:136K _hsmc

Spec. No. : MOS200803
HI-SINCERITY
Issued Date : 2005.03.13
Revised Date :2010,03,04
MICROELECTRONICS CORP.
Page No. : 1/5
H2N7002K
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
ESD protected
Absolute Maximum Ratings
Drain-Source Voltage ……………………………………………………………………………………………

4.2. h2n7002ksn.pdf Size:156K _hsmc

Spec. No. : MOS200809
HI-SINCERITY
Issued Date : 2008.11.18
Revised Date :2010.04.14
MICROELECTRONICS CORP.
Page No. : 1/4
H2N7002KSN Pin Assignment & Symbol
3
3-Lead Plastic SOT-323
H2N7002KSN
Package Code: SN
Pin 1: Gate 2: Source 3: Drain
N-CHANNEL TRANSISTOR 2
1
Description
N-channel enhancement-mode MOS transistor.
ESD protected
Absolute Maximum Ratings
Drai

4.3. h2n7002sn.pdf Size:114K _hsmc

Spec. No. : MOS200605
HI-SINCERITY
Issued Date : 2006.02.01
Revised Date : 2006.02.07
MICROELECTRONICS CORP.
Page No. : 1/5
H2N7002SN Pin Assignment & Symbol
H2N7002SN
3
3-Lead Plastic SOT-323
Package Code: SN
N-Channel MOSFET (60V, 0.2A)
Pin 1: Gate 2: Source 3: Drain
2
1
D
Description
G
N-channel enhancement-mode MOS transistor.
S
Absolute Maximum Ratings
Drain-Source Vol

4.4. h2n7002.pdf Size:129K _hsmc

Spec. No. : MOS200503
HI-SINCERITY
Issued Date : 2005.04.01
Revised Date : 2009.10.09
MICROELECTRONICS CORP.
Page No. : 1/5
H2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
SOT-23
Absolute Maximum Ratings
Drain-Source Voltage ………………………………………………………………………………………………….

2N7000K Datasheet (PDF)

Даташит bs170 pdf ( datasheet )

1.1. tsm2n7000kct.pdf Size:181K _update_mosfet

TSM2N7000K
60V N-Channel MOSFET
TO-92
Pin Definition: PRODUCT SUMMARY
1. Source
VDS (V) RDS(on)(Ω) ID (mA)
2. Gate
3. Drain
5 @ VGS = 10V 100
60
5.5 @ VGS = 5V 100
Features
Block Diagram
● Low On-Resistance
● ESD Protection
● High Speed Switching
● Low Voltage Drive
Ordering Information
Part No. Package Packing
TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

1.2. 2n7000kl bs170kl.pdf Size:93K _vishay

2N7000KL/BS170KL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
TrenchFET Power MOSFET
VDS (V) rDS(on) (?) VGS(th) (V) ID (A)
Pb-free
ESD Protected: 2000 V
Available
2 at VGS = 10 V
0.47
60 1.0 to 2.5 RoHS*
APPLICATIONS
COMPLIANT
4 at VGS = 4.5 V
0.33
Direct Logic-Level Interface: TTL/CMOS
Solid-State Relays
Drivers: Relays, Solenoids, Lam

1.3. 2n7000k.pdf Size:201K _auk

2N7000K
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
 ESD rating: 1000V (HBM)
 Low On-Resistance: RDS(on) 1.4. 2n7000k.pdf Size:67K _kec

2N7000K
SEMICONDUCTOR
N Channel MOSFET
TECHNICAL DATA
ESD Protected 2000V
INTERFACE AND SWITCHING APPLICATION.
B C
FEATURES
ESD Protected 2000V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
N DIM MILLIMETERS
Rugged and reliable.
A 4.70 MAX
E
K
B 4.80 MAX
High saturation current capablity. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H

Статус

	2N7000	2N7000-D26Z	2N7000-D74Z	2N7000-D75Z	2N7000G	2N7000RLRA	2N7000RLRAG	2N7000RLRMG	2N7000RLRPG
Статус продукта	В производстве (Рекомендуется для новых разработок)	В производстве (Рекомендуется для новых разработок)	В производстве (Рекомендуется для новых разработок)	В производстве (Рекомендуется для новых разработок)	Скоро будет снят с производства (Производитель объявил о скором прекращении производства прибора)	Снят с производства (Производитель прекратил производство прибора)	Скоро будет снят с производства (Производитель объявил о скором прекращении производства прибора)	Скоро будет снят с производства (Производитель объявил о скором прекращении производства прибора)	Снят с производства (Производитель прекратил производство прибора)

Даташит viper22a pdf ( datasheet )

H2N7000 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Irfz48n mosfet. datasheet pdf. equivalent

Наименование прибора: H2N7000

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.4
W

Предельно допустимое напряжение сток-исток (Uds): 60
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 0.2
A

Максимальная температура канала (Tj): 150
°C

Сопротивление сток-исток открытого транзистора (Rds): 5
Ohm

Тип корпуса: TO92

H2N7000
Datasheet (PDF)

1.1. h2n7000.pdf Size:51K _hsmc

1.2. h2n7000.pdf Size:423K _shantou-huashan

4.1. h2n7002k.pdf Size:136K _hsmc

4.2. h2n7002ksn.pdf Size:156K _hsmc

4.3. h2n7002sn.pdf Size:114K _hsmc

4.4. h2n7002.pdf Size:129K _hsmc

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

TSM2N7000KCT Datasheet (PDF)

1.1. tsm2n7000kct.pdf Size:181K _update_mosfet

1.2. tsm2n7000.pdf Size:85K _taiwansemi

2.1. tsm2n7002kdcu6.pdf Size:194K _update_mosfet

TSM2N7002KD
60V N-Channel MOSFET
SOT-363
PRODUCT SUMMARY
Pin Definition:
1. Source 2 6. Drain 2
VDS (V) RDS(on)(mΩ) ID (A)
2. Gate 2 5. Gate 1
3. Drain 1 4. Source 1
2 @ VGS = 10V 300
60
4 @ VGS = 4.5V 200
Features Block Diagram
● Low On-Resistance
● ESD Protection
● High Speed Switching
● Low Voltage Drive
Ordering Information
Part No. Package Pa

2.2. tsm2n7002kcu tsm2n7002kcx.pdf Size:237K _update_mosfet

TSM2N7002K
60V N-Channel MOSFET
SOT-23 SOT-323 PRODUCT SUMMARY
Pin Definition:
1. Gate
VDS (V) RDS(on)(Ω) ID (mA)
2. Source
3. Drain
2 @ VGS = 10V 300
60
4 @ VGS = 4.5V 200
Features
Block Diagram
● Low On-Resistance
● ESD Protected 2KV
● High Speed Switching
● Low Voltage Drive
Ordering Information
Part No. Package Packing
TSM2N7002KCX RF SOT-23

2.3. tsm2n7002e a07.pdf Size:143K _taiwansemi

2.4. tsm2n7002 a07.pdf Size:127K _taiwansemi

Datasheets

Просмотр и загрузка
Datasheet 2N7000, 2N7002, NDS7002A

PDF, 775 Кб, Версия: 3, Файл закачен: 3 мар 2019, Страниц: 8N-Channel Enhancement Mode Field Effect Transistor

Выписка из документа

Features Description •
•
•
• These N-channel enhancement mode field effect transistors are produced using ON Semiconductor’s
proprietary, high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while providing rugged, reliable, and fast
switching performance. They can be used in most
applications requiring up to 400 mA DC and can deliver
pulsed currents up to 2 A. These products are
particularly
suited
for
low-voltage,
low-cur-rent
applications, such as small servo motor control,
power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability D
D S TO-92 1 1. Source 2. Gate 3. Drain G G SOT-23
(TO-236AB) S 2N7002/NDS7002A Ordering Information
Part Number Marking Package Packing Method Min Order Qty /
…