Datasheet stmicroelectronics tip147

TIP147 Datasheet (PDF)

1.1. tip147f.pdf Size:62K _fairchild_semi

TIP145F/146F/147F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
Industrial Use
Complement to TIP140F/141F/142F
TO-3PF
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Symbol Parameter Value Units
VC

1.2. tip140-tip147.pdf Size:321K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN
TIP145, 146, 147 PNP
TO- 3PN Non Isolated
Plastic Package
Designed for General Purpose Amplifier and Low Frequency Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNIT
TIP145 TIP146 TIP147
Coll

 1.3. tip147.pdf Size:222K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP147
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Complement to Type TIP142
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applic

TIP142 Datasheet (PDF)

1.1. tip142t 3da142t.pdf Size:518K _update

TIP142T(3DA142T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于工业仪器的线性开关转换。
Purpose: Linear and switching industrial equipment.
特点: 基极-发射极设有独立的电阻、直流增益高、与 TIP147T(3CA147T)配对。
Features: Monolithic construction with built in base-emitter shunt resistors、High DC current gain
complement to TIP147T(

1.2. tip142t.pdf Size:52K _fairchild_semi

TIP140T/141T/142T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
Complement to TIP145T/146T/147T
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units C

 1.3. tip142f.pdf Size:62K _fairchild_semi

TIP140F/141F/142F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
Complement to TIP145F/146F/147F
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
TO-3PF
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Symbol Parameter Value Units
VCBO

1.4. tip142t 47t.pdf Size:410K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN
TIP147T PNP
TO-220
Plastic Package
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 100 V
Emitter Base Voltage VEBO 5.0

 1.5. tip142t.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applicatio

1.6. tip142f.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142F
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147F
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applic

1.7. tip142.pdf Size:164K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor TIP142
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Complement to Type TIP147
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta

TIP117 Datasheet (PDF)

1.1. tip117 3ca117.pdf Size:274K _update

TIP117(3CA117) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率线性开关放大。
Purpose: Medium power linear switching applications.
特点:与 TIP112(3DA112)互补。
Features: Complement to TIP112(3DA112).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -100 V
CBO
V -100 V
CEO
V -5.0 V
EBO

1.2. tip115 tip116 tip117 to-220.pdf Size:373K _mcc

MCC
TIP115
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
TIP116
CA 91311
Phone: (818) 701-4933
TIP117
Fax: (818) 701-4939
Features
High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.)
Low Collector-Emitter Saturation Voltage
PNP Epitaxial
Complementary to TIP110/111/112
Lead Free Finish/RoHS Compliant (Note1) («P» Suffix d

 1.3. tip117f.pdf Size:445K _kec

SEMICONDUCTOR TIP117F
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A
C
DIM MILLIMETERS
S
_
FEATURES A 10.0 + 0.3
_
+
B 15.0 0.3
E
High DC Current Gain. C _
2.70 0.3
+
D 0.76+0.09/-0.05
: hFE=1000(Min.), VCE=-4V, IC=-1A.
_
E Φ3.2 0.2
+
_
F 3.0 0.3
+
Low Collector-Emitter Saturation Vol

1.4. tip117.pdf Size:75K _kec

SEMICONDUCTOR TIP117
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
A
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
R
S
FEATURES
P
D
High DC Current Gain.
DIM MILLIMETERS
: hFE=1000(Min.), VCE=-4V, IC=-1A.
A 10.30 MAX
B 15.30 MAX
Low Collector-Emitter Saturation Voltage.
C 0.80
_
+
Complementary to TIP112. D Φ3.60 0.20
T
E 3.00

 1.5. tip117.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP117
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -1A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = -2.5V(Max)@ I = -2A
CE(sat) C
·Complement to Type TIP112
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICA

1.6. htip117.pdf Size:43K _hsmc

Spec. No. : HE200204
HI-SINCERITY
Issued Date : 2000.08.01
Revised Date : 2004.11.19
MICROELECTRONICS CORP.
Page No. : 1/4
HTIP117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
TO-220
The HTIP117 is designed for use in general purpose amplifier and low-speed
switching applications.
Darlington Schematic
C
Absolute Maximum Ratings (TA=25°C)
B
• Maximum Temperatures
Storage Tempera

Datasheets

DS0857: Complementary power Darlington transistors

PDF, 139 Кб, Версия: 8.1

Выписка из документа

TIP142, TIP147Complementary power Darlington transistorsDatasheet — production data Featuresв–  Monolithic Darlington configuration в–  Integrated antiparallel collector-emitter diode Applications2 в–  Linear and switching industrial equipmentTO-247 DescriptionThe devices are manufactured in planartechnology with “base island” layout andmonolithic Darlington configuration. The resultingtransistors show exceptional high gainperformance coupled with very low saturationvoltage. Table 1. 3 1 Figure 1. Internal schematic diagrams R1 typ. = 5 kО R1 typ. = 8 kО R2 typ. = 60 О R2 typ. = 100 О Device summary Part number Marking Polarity TIP142 TIP142 NPN TIP147 TIP147 PNP April 2012This is information on a product in full production. Doc ID 4132 Rev 8 Package Packaging TO-247 Tube 1/10www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratingsTable 2. Absolute maximum ratings Symbol Value Unit Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 10 A Collector peak current 20 A Base current 0.5 A PTOT Total dissipation at Tcase = 25 В°C 125 W TSTG Storage temperature -65 to 150 В°C 150 В°C ICMIB TJ Max. operating junction temperature For PNP type voltage and current are negative.Table 3.SymbolRthJC 2/10 Parameter VCBO IC Note: TIP142, TIP147 Thermal dataParameterThermal resistance junction-case Doc ID 4132 Rev 8 __max Value Unit 1 В°C/W TIP142, TIP147 2 Electrical characteristics Electrical characteristicsTcase = 25 В°C; unless otherwise specified.Table 4. …

TIP140 Datasheet (PDF)

1.1. tip140re.pdf Size:234K _motorola

Order this document
MOTOROLA
by TIP140/D
SEMICONDUCTOR TECHNICAL DATA
NPN
TIP140
Darlington Complementary
TIP141*
Silicon Power
Transistors
. . . designed for generalpurpose amplifier and low frequency switching applications. TIP142*
PNP
High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V
CollectorEmitter Sustaining Voltage @ 30 mA
TIP145
VCEO(sus) = 60 Vdc (Min) TI

1.2. tip140-tip147.pdf Size:321K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN
TIP145, 146, 147 PNP
TO- 3PN Non Isolated
Plastic Package
Designed for General Purpose Amplifier and Low Frequency Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNIT
TIP145 TIP146 TIP147
C

 1.3. tip140t.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP140T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 60V(Min)
CEO(SUS)
·Complement to Type TIP145T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching application

1.4. tip140.pdf Size:222K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP140
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 60V(Min)
CEO(SUS)
·Complement to Type TIP145
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applicati

 1.5. tip140f.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP140F
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 60V(Min)
CEO(SUS)
·Complement to Type TIP145F
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applica

TIP142F Datasheet (PDF)

1.1. tip142f.pdf Size:62K _fairchild_semi

TIP140F/141F/142F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
Complement to TIP145F/146F/147F
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
TO-3PF
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Symbol Parameter Value Units
VCBO

1.2. tip142f.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142F
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147F
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applic

 4.1. tip142t 3da142t.pdf Size:518K _update

TIP142T(3DA142T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于工业仪器的线性开关转换。
Purpose: Linear and switching industrial equipment.
特点: 基极-发射极设有独立的电阻、直流增益高、与 TIP147T(3CA147T)配对。
Features: Monolithic construction with built in base-emitter shunt resistors、High DC current gain
complement to TIP147T(

4.2. tip142t.pdf Size:52K _fairchild_semi

TIP140T/141T/142T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
Complement to TIP145T/146T/147T
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units C

 4.3. tip142t 47t.pdf Size:410K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN
TIP147T PNP
TO-220
Plastic Package
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 100 V
Emitter Base Voltage VEBO

4.4. tip142t.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applicatio

 4.5. tip142.pdf Size:164K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor TIP142
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Complement to Type TIP147
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta

TIP142 Datasheet (PDF)

1.1. tip142t 3da142t.pdf Size:518K _update

TIP142T(3DA142T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于工业仪器的线性开关转换。
Purpose: Linear and switching industrial equipment.
特点: 基极-发射极设有独立的电阻、直流增益高、与 TIP147T(3CA147T)配对。
Features: Monolithic construction with built in base-emitter shunt resistors、High DC current gain
complement to TIP147T(

1.2. tip142t.pdf Size:52K _fairchild_semi

TIP140T/141T/142T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
Complement to TIP145T/146T/147T
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units C

 1.3. tip142f.pdf Size:62K _fairchild_semi

TIP140F/141F/142F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
Complement to TIP145F/146F/147F
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
TO-3PF
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Symbol Parameter Value Units
VCBO

1.4. tip142t 47t.pdf Size:410K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN
TIP147T PNP
TO-220
Plastic Package
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 100 V
Emitter Base Voltage VEBO 5.0

 1.5. tip142t.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applicatio

1.6. tip142f.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142F
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147F
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applic

1.7. tip142.pdf Size:164K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor TIP142
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Complement to Type TIP147
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta

TIP141 Datasheet (PDF)

1.1. tip141.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP141
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 80V(Min)
CEO(SUS)
·Complement to Type TIP146
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applicati

1.2. tip141f.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP141F
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 80V(Min)
CEO(SUS)
·Complement to Type TIP146F
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applica

 1.3. tip141t.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP141T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 80V(Min)
CEO(SUS)
·Complement to Type TIP146T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching application

Принципиальная схема

Приведенная схема усилителя может развивать мощность до 200 Ватт и даже более при питании +/-48В, она построена всего на пяти транзисторах в обвязке с небольшим числом других деталей. Если посмотреть на схемы транзисторных УНЧ на сайте «RadioStorage.net» то эту схему можно смело назвать очень сбалансированной в соотношении: выходная мощность/количество деталей/простота/качество.

Рис. 1. Принципиальная схема транзисторного усилителя мощности на TIP142, TIP147.

Если попробовать соединить два таких усилителя в мостовом режиме то можно ожидать выходной мощности на нагрузку порядка 400-500 Ватт. Данный усилитель можно использовать в комплексе со стационарной и самодельной звуковоспроизводящей аппаратурой, на дискотеках, в автомобиле как УМЗЧ для самбвуфера и т.п.

В случае питания схемы усилителя от сети переменного напряжения 220В необходимо собрать несложный выпрямитель, схема которого представлена ниже.

Рис. 2. Принципиальная схема простого двуполярного выпрямителя для УМЗЧ (+/-48В).

BD142 Datasheet (PDF)

1.1. bd142.pdf Size:75K _comset

BD142
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING
APPLICATIONS
LF Large Signal Power Amplification
Low Saturation Voltage
High Dissipation Rating
Intended for a wide variety of intermediate-power applications.
It is especially suited for use in audio and inverter circuits at 12 volts.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
VCEO Collector-Emitter Voltage 45 V

1.2. bd142.pdf Size:204K _inchange_semiconductor

isc Silicon NPN Power Transistor BD142
DESCRIPTION
·Low Collector Saturation Voltage
·High Power Dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·LF large signal power amplification.
·Intended for a wide variety of intermediate power applications.
·Suited for use in audio and inverter circuits at 12V.
ABSOLUTE MAXIMUM

2SK147 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK147

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.6
W

Предельно допустимое напряжение сток-исток (Uds): 40
V

Максимально допустимый постоянный ток стока (Id): 0.03
A

Максимальная температура канала (Tj): 125
°C

Сопротивление сток-исток открытого транзистора (Rds): 25
Ohm

Тип корпуса: TO92MOD

2SK147
Datasheet (PDF)

1.1. 2sk1470.pdf Size:97K _sanyo

Ordering number:EN3771A
N-Channel Silicon MOSFET
2SK1470
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
Low-voltage drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symb

1.2. 2sk1471.pdf Size:92K _sanyo

Ordering number:EN3772A
N-Channel Silicon MOSFET
2SK1471
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

 1.3. 2sk1472.pdf Size:119K _sanyo

Ordering number:EN3773A
N-Channel Silicon MOSFET
2SK1472
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

1.4. 2sk1474.pdf Size:120K _sanyo

Ordering number:EN3775A
N-Channel Silicon MOSFET
2SK1474
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

 1.5. 2sk1475.pdf Size:120K _sanyo

Ordering number:EN3776A
N-Channel Silicon MOSFET
2SK1475
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

1.6. 2sk147.pdf Size:86K _sanyo

1.7. 2sk1473.pdf Size:123K _sanyo

Ordering number:EN3774
N-Channel Silicon MOSFET
2SK1473
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
Low-voltage drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symbo

1.8. 2sk1478.pdf Size:33K _panasonic

Power F-MOS FETs 2SK1478
2SK1478
Silicon N-Channel Power F-MOS
Unit : mm
Features
10.0 0.2 4.2 0.2
Low ON-resistance RDS(on) : RDS(on)= 0.4?(typ)
5.5 0.2 2.7 0.2
High-speed switching : tf = 44ns(typ)
No secondary breakdown
o3.1 0.1
High breakdown voltage, large allowable power dissipation
Applications
1.3 0.2
Non-contact relay
1.4 0.1
Solenoid drive
+0.2
0.5 -0.1
0.8

1.9. 2sk1476.pdf Size:202K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1476
DESCRIPTION
·Drain Current –I =12A@ T =25℃
D C
·Drain Source Voltage-
: V =450 (Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solen

1.10. 2sk1478.pdf Size:192K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1478
DESCRIPTION
·Drain Current –I =8A@ T =25℃
D C
·Drain Source Voltage-
: V =250V(Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High speed power switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL ARAMETER VALUE UNIT
V Drain-Source Voltage (V =0) 250 V
DSS GS
V Gate-Source

1.11. 2sk1477.pdf Size:202K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1477
DESCRIPTION
·Drain Current –I =12A@ T =25℃
D C
·Drain Source Voltage-
: V =500 (Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solen

Другие MOSFET… IRLB4132PBF
, 2SK240
, 2SJ75
, 2SK146
, 2SJ73
, 2SK266
, 2SK455
, 2SK456
, IRFZ44N
, IFN146
, 2SK2564
, 2SK1537
, 2SK2879-01
, 2SK2367
, 2SK2368
, LND150K1
, LND150N3
.

TIP147T Datasheet (PDF)

4.1. tip147f.pdf Size:62K _fairchild_semi

TIP145F/146F/147F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
Industrial Use
Complement to TIP140F/141F/142F
TO-3PF
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Symbol Parameter Value Units
VC

4.2. tip140-tip147.pdf Size:321K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN
TIP145, 146, 147 PNP
TO- 3PN Non Isolated
Plastic Package
Designed for General Purpose Amplifier and Low Frequency Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNIT
TIP145 TIP146 TIP147
C

 4.3. tip147.pdf Size:222K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP147
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Complement to Type TIP142
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applic

Список деталей для схемы усилителя

Резисторы (0,25Вт):

  • R1 = 22 К;
  • R2 = 2,2 К / 1 Ватт;
  • R3 = 2.7 К;
  • R4 = 100 Ом;
  • R5 = 8,2 К;
  • R6 = 470 Ом;
  • R7, R8 = 1 К / 1 Ватт;
  • R9, R10 = 1 Ом / 1 Ватт;
  • R11 = 1 Ом / 1 Ватт.

Конденсаторы:

  • C1 = 10 мкФ / 16 В;
  • C2 = 470 мкФ / 6.3В;
  • C3 = 220 пФ;
  • C4 = 220 мкФ / 40 В;
  • C5 = 100 пФ;
  • C6 = 470 нФ;
  • C7 = 100 нФ / 100 В;
  • C8 = 220 нФ;
  • C9, C10 = 1 мкФ / 63 В (не электролит);
  • C11, C12 = 220 мкФ / 63В.

Транзисторы и диоды:

  • D1 = стабилитрон на 12В / 500мВт (ZPD 12V);
  • D2, D3, D4 = 1N4001 (или подобные);
  • D5, D6, D7, D8 = BY 550-50 (или подобные);
  • T1, T2 = BC556B;
  • T3 = BD241C;
  • T4 = TIP142;
  • T5 = TIP147.

Рис. 5. Цоколевка транзистора BC556B из даташита ONSemi.

Перед установкой транзисторов прозвоните их выводы тестером и убедитесь что они совпадают с заявленной цоколевкой, это касается BC556, BC556B.

Биполярный транзистор TIP147 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: TIP147

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 125
W

Макcимально допустимое напряжение коллектор-база (Ucb): 100
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 10
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 500

Корпус транзистора: TO218

TIP147
Datasheet (PDF)

1.1. tip147f.pdf Size:62K _fairchild_semi

TIP145F/146F/147F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
Industrial Use
Complement to TIP140F/141F/142F
TO-3PF
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Symbol Parameter Value Units
VC

1.2. tip140-tip147.pdf Size:321K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN
TIP145, 146, 147 PNP
TO- 3PN Non Isolated
Plastic Package
Designed for General Purpose Amplifier and Low Frequency Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNIT
TIP145 TIP146 TIP147
Coll

 1.3. tip147.pdf Size:222K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP147
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Complement to Type TIP142
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applic

Другие транзисторы… TIP142F
, TIP142T
, TIP145
, TIP145F
, TIP145T
, TIP146
, TIP146F
, TIP146T
, 2N5551
, TIP147F
, TIP147T
, TIP150
, TIP151
, TIP152
, TIP160
, TIP161
, TIP162
.

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