Интернет-справочник основных параметров транзисторов. аналоги транзистора 2sc2335

Содержание:

2SC2331 Datasheet (PDF)
KSC2330A Datasheet (PDF)
2SC2336 Datasheet (PDF)
2SC3694 Datasheet (PDF)
Характеристики
2SC2335O Datasheet (PDF)
KSC2330Y Datasheet (PDF)
2SC2335 Datasheet (PDF)
2SC2335F Datasheet (PDF)
2SC2335R Datasheet (PDF)
2SC2335Y Datasheet (PDF)
SI2335DS Datasheet (PDF)
Результаты подбора транзистора (поиска аналога)
Биполярный транзистор 2SC3694 — описание производителя. Основные параметры. Даташиты.
2SC3694 Datasheet (PDF)
2SC2333 Datasheet (PDF)

2SC2331 Datasheet (PDF)

1.1. 2sc2331.pdf Size:265K _nec

1.2. 2sc2331.pdf Size:99K _savantic

SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2331
DESCRIPTION
With TO-220 package
Complement to type 2SA1008
Low collector saturation voltage
Fast switching speed
APPLICATIONS
Switching regulators
DC-DC converters
High frequency power amplifiers
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simpli

1.3. 2sc2331.pdf Size:45K _jmnic

Product Specification www.jmnic.com
Silicon Power Transistors 2SC2331
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1008
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC/DC converters
·High frequency power amplifiers
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Fig.1

1.4. 2sc2331.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2331
DESCRIPTION
·Low Collector Saturation Voltage-
: V = 0.6V(Max.)@ I = 1A
CE(sat) C
·Fast Switching Speed
·Complement to Type 2SA1008
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency pow

KSC2330A Datasheet (PDF)

Интернет-справочник основных параметров транзисторов. аналоги транзистора tip35c

1.1. ksc2330a.pdf Size:38K _fairchild_semi

KSC2330A
Color TV Chroma Output
• Collector-Base Voltage : VCBO=400V
• Current Gain Bandwidth Product : fT=50MHz (TYP.)
TO-92L
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 7

1.2. ksc2330a.pdf Size:50K _samsung

KSC2330A NPN EPITAXIAL SILICON TRANSISTOR
COLOR TV CHROMA OUTPUT
TO-92L
Collector-Base Voltage VCBO=400V
Current Gain-Bandwidth Product fT=50Mhz (TYP)
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 7 V
Collector Current IC 100 mA
Collector Dissipation PC 1 mW
Ju

3.1. ksc2330.pdf Size:37K _fairchild_semi

KSC2330
Color TV Chroma Output
• Collector-Base Voltage : VCBO=300V
• Current Gain Bandwidth Product : fT=50MHz (TYP.)
TO-92L
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO Emitter-Base Voltage 7

3.2. ksc2330.pdf Size:50K _samsung

KSC2330 NPN EPITAXIAL SILICON TRANSISTOR
COLOR TV CHROMA OUTPUT
TO-92L
Collector-Base Voltage VCBO=300V
Current Gain-Bandwidth Product fT=50Mhz (TYP)
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 7 V
Collector Current IC 100 mA
Collector Dissipation PC 1 mW
Juncti

2SC2336 Datasheet (PDF)

Интернет-справочник основных параметров транзисторов. аналоги транзистора bc817-25

1.1. 2sa1006-a-b 2sc2336-a-b.pdf Size:194K _nec

This Material Copyrighted By Its Respective Manufacturer

1.2. 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf Size:194K _nec

This Material Copyrighted By Its Respective Manufacturer

1.3. 2sc2336.pdf Size:196K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1006,
2SA1006A,2SA1006B
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220) and symbol
3 Emitte

1.4. 2sc2336.pdf Size:198K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2336
DESCRIPTION
·Good Linearity of h
FE
·High Collector-Emitter Breakdown Voltage-
: V = 180V(Min)
(BR)CEO
·Wide Area of Safe Operation
·Complement to Type 2SA1006
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Adudio frequency power amplifier
·High frequency power amplifier
ABSOLUTE MAX

1.5. 2sc2336 2sc2336a 2sc2336b.pdf Size:155K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1006,
2SA1006A,2SA1006B
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220)

2SC3694 Datasheet (PDF)

Интернет-справочник основных параметров транзисторов. параметры транзистора fqp50n06l

1.1. 2sc3694.pdf Size:27K _jmnic

Power Transistors www.jmnic.com
2SC3694
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 15 A
PC Collector power dissipation 30 W

1.2. 2sc3694.pdf Size:203K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3694
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 12A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

4.1. 2sc3691.pdf Size:303K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC3691
DESCRIPTION ·
·With TO-220Fa package
·Large current ,high speed
·Low saturation voltage
APPLICATIONS
·Designed for high speed and power
switching applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collec

4.2. 2sc3692.pdf Size:29K _jmnic

Power Transistors www.jmnic.ocm
2SC3692
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 7 A
PC Collector power dissipation 30 W

4.3. 2sc3693.pdf Size:28K _jmnic

Power Transistors www.jmnic.com
2SC3693
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 10 A
PC Collector power dissipation 30 W

4.4. 2sc3691.pdf Size:206K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3691
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 4A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

4.5. 2sc3692.pdf Size:205K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3692
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 6A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

4.6. 2sc3690.pdf Size:201K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3690
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 3A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

4.7. 2sc3693.pdf Size:207K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3693
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 8A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

Характеристики

Основные характеристики
Производитель	Kyocera
Серия	Ecosys
Модель	P2335dnнайти похожий принтер/МФУ
Тип оборудования
Применение
Технология печати
Цвета, использованные в оформлении	Белый, черный
Описание	Принтер лазерный KYOCERA P2335dn (A4, 1200dpi, 256Mb, 35 ppm, дуплекс, USB, Gigabit Ethernet) с дополнительным тонером TK-1200
Поддержка ОС	Windows 10, Windows 8.1, Windows 8, Windows 7, Linux, UNIX, MAC OS X
Комплект поставки и опции
Комплект поставки	Диск с ПО, кабель питания, пробный картриджкомплект №1комплект №2
Интерфейсный USB-кабель	Не входит в комплект поставки
Процессор
Процессор	800 МГц
Конфигурация
Память принтера/МФУ	256 Мб; не расширяется
Интерфейс, разъемы и выходы
Слоты для карт памяти	SDHC, SD
Интерфейс	USB 2.0, RJ-45интерфейсы
Сетевой интерфейс	1 Гбит/сек
Порты	RJ-45, USB 2.0 Type B, USB Type A
Управление бумагой / печатные носители
Формат печатных носителей	A4 (210 x 297 мм), A5 (210 x 148 мм), A6 (4″x6″, 10 x 15 см); пользовательские форматы — от 70 x 148 мм до 216 x 356 мм для многоцелевого лотка и от 105 x 148 мм до 216 x 356 мм для кассеты
Назад ВпередВся подходящая бумага
Формат носителей для двусторонней печати	A4, A5
Кол-во лотков для бумаги (не считая многоцелевой, если он есть)	1
Кол-во приобретаемых отдельно доп. лотков для подачи бумаги	2
Емкость податчика бумаги	250 листов
Емкость многоцелевого лотка/лотка ручной подачи	100 листов
Емкость выходного лотка	250 листов лицевой стороной вниз
Плотность бумаги	60 — 163 г/м2
Плотность бумаги для многоцелевого лотка/ручной подачи	60 — 220 г/м2
Плотность бумаги для двусторонней печати	60 — 163 г/м2
Максимальная плотность бумаги	220 г/м2
Duplex unit (модуль двусторонней печати)
Параметры/функции печати
Время выхода первой страницы	6.8 секунды
Кол-во цветов	1
Разрешение ч/б печати	1200 dpi
Максимальная скорость монохромной печати	35 стр./мин.
Язык описания страниц	PRESCRIBE IIe, эмуляция PCL 6, эмуляция PostScript Level 3
Расходные материалы / заменяемые компоненты
Тип расходных материалов	Тонер+барабан
Тип установки картриджа	Только черный
Картридж черный	TK-1200
Барабан	DK-1150
Ресурс расходных материалов/заменяемых компонентов
Ресурс черного картриджа или контейнера с черными чернилами	3000 страниц; ресурс пробного картриджа из комплекта поставки — 1000 страниц
Прочие характеристики
Уровень шума принтера/МФУ	47.9 дБ при печати
Питание
Питание	От электросети
Блок питания	Встроенный
Потребление энергии	620 Вт при печати; 8 Вт в режиме ожидания; 0.8 Вт в спящем режиме
Потребительские свойства
Время прогрева	15 секунд с момента включения
Опции
Опции (лотки для бумаги)	PF-1100подходящие лотки
Логистика
Размеры (ширина x высота x глубина)	375 x 272 x 393 мм
Вес	14 кг
Размеры упаковки (измерено в НИКСе)	51.1 x 50.02 x 40 см
Вес брутто (измерено в НИКСе)	18.1 кг
Внешние источники информации
Горячая линия производителя	8-800-700-90-04 (звонок бесплатный по России)

2SC2335O Datasheet (PDF)

3.1. 2sc2335f.pdf Size:201K _update

SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2335F
DESCRIPTION
·With TO-220F package
·Collector-emitter sustaining voltage
VCEO(sus)=400V(Min)
·Collector-emitter saturation voltage
VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
·Switching time-tf=1.0µs(Max.)@IC=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching

3.2. 2sc2335.pdf Size:118K _nec

DATA SHEET
SILICON POWER TRANSISTOR
2SC2335
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION
high-voltage switching, and is ideal for use as a driver in devices such
Part No. Package
as switching regulators, DC/DC converters, and high-frequency power
2SC2335 TO-220AB
amplifier

3.3. 2sc2335.pdf Size:131K _mospec

A
A
A

3.4. 2sc2335.pdf Size:205K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC2335
DESCRIPTION ·
·With TO-220C package
·Collector-emitter sustaining voltage
VCEO(sus)=400V(Min)
·Collector-emitter saturation voltage
VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
·Switching time-tf=1.0?s(Max.)@IC=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit

3.5. 2sc2335f.pdf Size:201K _inchange_semiconductor

3.6. 2sc2335.pdf Size:203K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2335
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V = 400V(Min)
CEO(SUS)
·Collector-Emitter Saturation Voltage-
: V = 1.0V(Max)@ I = 3A, I = 0.6A
CE(sat) C B
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage, high-speed switching in

KSC2330Y Datasheet (PDF)

3.1. ksc2330a.pdf Size:38K _fairchild_semi

3.2. ksc2330.pdf Size:37K _fairchild_semi

3.3. ksc2330a.pdf Size:50K _samsung

3.4. ksc2330.pdf Size:50K _samsung

2SC2335 Datasheet (PDF)

1.1. 2sc2335f.pdf Size:201K _update

1.2. 2sc2335.pdf Size:118K _nec

1.3. 2sc2335.pdf Size:131K _mospec

A
A
A

1.4. 2sc2335.pdf Size:205K _jmnic

1.5. 2sc2335f.pdf Size:201K _inchange_semiconductor

1.6. 2sc2335.pdf Size:203K _inchange_semiconductor

2SC2335F Datasheet (PDF)

1.1. 2sc2335f.pdf Size:201K _update

1.2. 2sc2335f.pdf Size:201K _inchange_semiconductor

3.1. 2sc2335.pdf Size:118K _nec

3.2. 2sc2335.pdf Size:131K _mospec

A
A
A

3.3. 2sc2335.pdf Size:205K _jmnic

3.4. 2sc2335.pdf Size:203K _inchange_semiconductor

2SC2335R Datasheet (PDF)

3.1. 2sc2335f.pdf Size:201K _update

3.2. 2sc2335.pdf Size:118K _nec

3.3. 2sc2335.pdf Size:131K _mospec

A
A
A

3.4. 2sc2335.pdf Size:205K _jmnic

3.5. 2sc2335f.pdf Size:201K _inchange_semiconductor

3.6. 2sc2335.pdf Size:203K _inchange_semiconductor

2SC2335Y Datasheet (PDF)

3.1. 2sc2335f.pdf Size:201K _update

3.2. 2sc2335.pdf Size:118K _nec

3.3. 2sc2335.pdf Size:131K _mospec

A
A
A

3.4. 2sc2335.pdf Size:205K _jmnic

3.5. 2sc2335f.pdf Size:201K _inchange_semiconductor

3.6. 2sc2335.pdf Size:203K _inchange_semiconductor

SI2335DS Datasheet (PDF)

1.1. si2335ds.pdf Size:181K _vishay

Si2335DS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (?)ID (A)
Available
0.051 at VGS = — 4.5 V
— 4.0
TrenchFET Power MOSFETs: 1.8 V Rated
0.070 at VGS = — 2.5 V
— 12 — 3.5
0.106 at VGS = — 1.8 V
— 3.0
TO-236
(SOT-23)
G 1
3 D
S 2
Top View
Si2335DS (E5)*
*Marking Code
Ordering Info

1.2. si2335ds-3.pdf Size:1625K _kexin

SMD Type MOSFET
P-Channel Enhancement MOSFET
SI2335DS (KI2335DS)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
■ Features
0.4-0.1
3
● VDS (V) =-12V
● ID =-4.0A (VGS =-4.5V)
● RDS(ON) ＜ 51mΩ (VGS =-4.5V)
1 2
● RDS(ON) ＜ 70mΩ (VGS =-2.5V)
+0.02
+0.1
0.15 -0.02
0.95 -0.1
+0.1
● RDS(ON) ＜ 106mΩ (VGS =-1.8V)
1.9 -0.2
G 1
3 D
1. Gate
S 2
2. Source
3. Drai

1.3. si2335ds.pdf Size:1573K _kexin

SMD Type MOSFET
P-Channel Enhancement MOSFET
SI2335DS (KI2335DS)
SOT-23
Unit: mm
+0.1
■ Features 2.9-0.1
+0.1
0.4 -0.1
● VDS (V) =-12V
3
● ID =-4.0A (VGS =-4.5V)
● RDS(ON) ＜ 51mΩ (VGS =-4.5V)
● RDS(ON) ＜ 70mΩ (VGS =-2.5V)
1 2
+0.1
0.95-0.1
● RDS(ON) ＜ 106mΩ (VGS =-1.8V) 0.1+0.05
-0.01
1.9+0.1
-0.1
G 1
1.Gate
3 D
2.Source
S 2
3.Drain
■ Abso

Результаты подбора транзистора (поиска аналога)

Type	Mat	Struct	Pc	Ucb	Uce	Ueb	Ic	Tj	Hfe	Caps
	Si	NPN	85	700	400	9	9	150	20	TO220
13007T	Si	NPN	80	700	400	9	8	150	20	TO220
2SC2335	Si	NPN	40	500	400	7	7	150	20	TO220
2SC2335O	Si	NPN	40	500	400	7	7	150	30	TO220
2SC2335R	Si	NPN	40	500	400	7	7	150	20	TO220
2SC2335Y	Si	NPN	40	500	400	7	7	150	40	TO220
2SC2427	Si	NPN	40	500		7	7	150	20	TO220
2SC3038	Si	NPN	40	500	400	7	7	150	50	TO220
2SC3039	Si	NPN	50	500	400	7	7	150	30	TO220
2SC3158	Si	NPN	60	500	400	7	7		20	TO220F
2SC3170	Si	NPN	40	500			7	150	25	TO220
2SC3522	Si	NPN	40	500			7	150	40	TO220
2SC3562	Si	NPN	40	500	400		10	150	20	TO220
2SC3563	Si	NPN	40	500	400		10	150	30	TO220
2SC3626	Si	NPN	40	500	400		8	150	55	TO220
2SC4055	Si	NPN	60	600	450	7	8	180	100	TO220
2SC4106M	Si	NPN	50	500	400	7	7	175	20	TO220
2SC4106N	Si	NPN	50	500	400	7	7	175	60	TO220
2SC4107M	Si	NPN	60	500	400	7	10	150	20	TO220
2SC4107N	Si	NPN	60	500	400	7	10	150	60	TO220
2SC4164M	Si	NPN	70	500	400	7	12	150	20	TO220
2SC4164N	Si	NPN	70	500	400	7	12	150	30	TO220
2SC4274	Si	NPN	40	500	400		10	150	40	TO220
2SC4458L	Si	NPN	40	900	500	9	8	150	25	TO220F
2SC4508	Si	NPN	40	500	400	7	10		25	TO220F
2SC4559	Si	NPN	40	500	400		7	175	150	TO220
2SD1162	Si	NPN	40	500		10	10	150	400	TO220
2SD1349	Si	NPN	50	500			7	150	150	TO220
2SD1533	Si	NPN	45	500			7	150	800	TO220
2SD1535	Si	NPN	45	500			7	150	2000	TO220
2SD1710A	Si	NPN	50	900	500	9	8	150	25	TO220
3DD13007B8	Si	NPN	80	700	400	9	8	150	20	TO220AB
3DD13007X1	Si	NPN	80	700	400	9	8	150	20	TO220AB
3DD13007_B8	Si	NPN	80	700	400	9	8	150	20	TO220AB
3DD13007_X1	Si	NPN	80	700	400	9	8	150	20	TO220AB
3DD13009A8	Si	NPN	100	700	400	9	12	150	20	TO220AB
3DD13009C8	Si	NPN	100	700	400	9	12	150	20	TO220AB
3DD13009_A8	Si	NPN	100	700	400	9	12	150	20	TO220AB
3DD13009_C8	Si	NPN	100	700	400	9	12	150	20	TO220AB
3DD13012A8	Si	NPN	100	750	400	10	15	150	20	TO220AB
3DD4206	Si	NPN	75	600	400	9	7	150	20	TO220
3DK3039	Si	NPN	50	500	400	7	7	175	25	TO276AB TO220 TO257
BU810	Si	NPN	75	600	400		7	150	100	TO220
BUD47	Si	NPN	100	850	400		8	150	100	TO220
BUD47A	Si	NPN	100	1000	400		8	150	100	TO220
BUL48	Si	NPN	75	800	400	9	7	150	30	TO220
BUL743	Si	NPN	100	1200	500	15	12	150	24	TO220
BUT12	Si	NPN	100	850	400		8	150	30	TO220
BUT12A	Si	NPN	125	1000	450		8	150	30	TO220
BUT54	Si	NPN	100	800	430		8	150	20	TO220
CSC2335	Si	NPN	40	500	400	7	7	150	20	TO220
ECG379	Si	NPN	100	700	400		12	175	20	TO220
HMJE13007	Si	NPN	80	700	400	9	8	150	25	TO220AB
KSC2335	Si	NPN	40	500	400	7	7	150	20	TO220
KSC2335O	Si	NPN	40	500	400	7	7	150	30	TO220
KSC2335R	Si	NPN	40	500	400	7	7	150	20	TO220
KSC2335Y	Si	NPN	40	500	400	7	7	150	40	TO220
KSC3158	Si	NPN	40	500	400	7	7	150	20	TO220
KSC3158O	Si	NPN	40	500	400	7	7	150	30	TO220
KSC3158R	Si	NPN	40	500	400	7	7	150	20	TO220
KSC3158Y	Si	NPN	40	500	400	7	7	150	40	TO220
KSC5032	Si	NPN	80	500	400	7	8	150	50	TO220
KSD5742	Si	NPN	80		400	8	8	150	200	TO220
MJ10012T	Si	NPN	65	600	400	8	10	150	100	TO220
MJE13009D	Si	NPN	100	700	400	9	12	150	40	TO220
MJE13009K	Si	NPN	80	700	400	9	12	150	40	TO3P TO220
MJE13009P	Si	NPN	80	700	400	9	12	150	40	TO3P TO220
MJE5742	Si	NPN	80	800	400	8	8	150	200	TO220
MJE5742G	Si	NPN	100		400	8	8	150	50	TO220AB
SGSD00020	Si	NPN	70	650	400		8	175	1000	TO220
SGSF341	Si	NPN	85	850	400		10	175		TO220
SGSF343	Si	NPN	85	1000	450		8	175		TO220
SGSF344	Si	NPN	85	1200	600		7	175		TO220
SM2175	Si	NPN	60		400		15	200	200	TO220
TT2194	Si	NPN	50	500	400	7	12	150	20	TO220
WBP3308	Si	NPN	45	900	500	7	7	150	20	TO220

Всего результатов: 76

Биполярный транзистор 2SC3694 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3694

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30
W

Макcимально допустимое напряжение коллектор-база (Ucb): 100
V

Макcимальный постоянный ток коллектора (Ic): 15
A

Предельная температура PN-перехода (Tj): 125
°C

Статический коэффициент передачи тока (hfe): 30

Корпус транзистора: TO220

2SC3694
Datasheet (PDF)

1.1. 2sc3694.pdf Size:27K _jmnic

1.2. 2sc3694.pdf Size:203K _inchange_semiconductor

4.1. 2sc3691.pdf Size:303K _jmnic

4.2. 2sc3692.pdf Size:29K _jmnic

4.3. 2sc3693.pdf Size:28K _jmnic

4.4. 2sc3691.pdf Size:206K _inchange_semiconductor

4.5. 2sc3692.pdf Size:205K _inchange_semiconductor

4.6. 2sc3690.pdf Size:201K _inchange_semiconductor

4.7. 2sc3693.pdf Size:207K _inchange_semiconductor

Другие транзисторы… 2SC3687
, 2SC3688
, 2SC3689
, 2SC369
, 2SC3690
, 2SC3691
, 2SC3692
, 2SC3693
, S8050
, 2SC3695
, 2SC3696
, 2SC3697
, 2SC3698
, 2SC3699
, 2SC369G
, 2SC369GB
, 2SC369GG
.

2SC2333 Datasheet (PDF)

1.1. 2sc2333.pdf Size:164K _nec

1.2. 2sc2333.pdf Size:158K _savantic

SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2333
DESCRIPTION
With TO-220C package
High speed switching
Low collector saturation voltage
APPLICATIONS
Switching regulator
DC-DC converter
Ultrasonic appliance
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL

1.3. 2sc2333.pdf Size:248K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC2333
DESCRIPTION ·
·With TO-220C package
·High speed switching
·Low collector saturation voltage
APPLICATIONS
·Switching regulator
·DC-DC converter
·Ultrasonic appliance
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER

1.4. 2sc2333.pdf Size:221K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2333
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
:V = 400V(Min)
CEO(SUS)
·High Speed Switching
·Low Collector Saturation Voltage
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator, DC-DC converter and
ultrasonic appliance appli