Интернет-справочник основных параметров транзисторов. аналоги транзистора bc817-25

Биполярный транзистор BC817DS — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC817DS

Маркировка: N3

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.6
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 5
pf

Статический коэффициент передачи тока (hfe): 160

Корпус транзистора: SOT457

BC817DS
Datasheet (PDF)

1.1. bc817ds.pdf Size:215K _upd

 DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DS
NPN general purpose double
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
FEATURES QUICK REFERENCE DATA
• High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
• 600 mW total power dissipation
VCEO colle

1.2. bc817ds.pdf Size:128K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DS
NPN general purpose double
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
FEATURES QUICK REFERENCE DATA
High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
600 mW total power dissipation
VCEO collector-em

 4.1. bc817dpn.pdf Size:149K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DPN
NPN/PNP general purpose
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC817DPN
FEATURES QUICK REFERENCE DATA
High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
600 mW total power dissipation
VCEO collector-emitte

Другие транзисторы… BC817-25LT3G
, BC817-25QA
, BC817-40-G
, BC817-40LG
, BC817-40LT1G
, BC817-40LT3G
, BC817-40QA
, BC817-40WT1G
, BC548
, BC817K-16
, BC817K-16W
, BC818-40LT1G
, BC818K-16
, BC818K-25
, BC818LT1
, BC818W
, BC846_SER
.

Биполярный транзистор BC817-40L — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC817-40L

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.25
W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимальный постоянный ток коллектора (Ic): 0.5
A

Граничная частота коэффициента передачи тока (ft): 100
MHz

Статический коэффициент передачи тока (hfe): 250

Корпус транзистора: SOT23

BC817-40L
Datasheet (PDF)

1.1. bc817-25lg bc817-40lg.pdf Size:570K _upd

BC817 SERIES
General Purpose Transistors
BC817-16/25/40LG
BC817-16LG,
BC817-25LG,BC817-40LG
SERIES
Features 3
• Pb-Free Packages are Available
1
2
Maximum Ratings
Rating Symbol Value Unit
SOT-23
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
COLLECTOR
Emitter-Base Voltage VEBO 5.0 V 3
Collector Current — Continuous IC 500 mAdc
1
BASE
2
EMITTER
Devi

1.2. bc817-16lt3g bc817-40lt3g.pdf Size:89K _upd

BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
Features 3
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; 1
BASE
AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
2
Complian

 1.3. bc817-25lt1g bc817-40lt1g.pdf Size:125K _upd

BC817-16LT1G,
BC817-25LT1G,
BC817-40LT1G
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
Features 3
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
1
Compliant
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector — Emitter Voltage VCEO 45 V
3
Collector — Base Voltage VCBO 50 V
Emitter — Base Voltage VEBO 5.0 V
1
2
Collect

1.4. sbc817-40lt3g.pdf Size:89K _onsemi

BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
Features 3
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; 1
BASE
AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
2
Complian

 1.5. sbc817-40lt1g.pdf Size:89K _onsemi

BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
Features 3
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; 1
BASE
AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
2
Complian

1.6. lbc817-40lt1g.pdf Size:280K _lrc

LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G
LBC817-25LT1G
General Purpose Transistors
LBC817-40LT1G
NPN Silicon
S-LBC817-16LT1G
S-LBC817-25LT1G
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and
S-LBC817-40LT1G
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
MA

Другие транзисторы… BC327-025
, BC337-025
, BC337-040
, BC807-16L
, BC807-25L
, BC807-40L
, BC817-16L
, BC817-25L
, 2SC5200
, BC846AL
, BC846BL
, BC846BM3T5G
, BC846BPDW1
, BC846C
, BC847AL
, BC847BDW1
, BC847BL
.

Биполярный транзистор BC817W — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC817W

Маркировка: 6D_6D-_6Dp_6Dt_6DW

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.2
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 5
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT323

BC817W
Datasheet (PDF)

1.1. bc817 bc817w bc337.pdf Size:236K _philips

BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 17 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1. Product overview
Type number Package PNP complement
NXP JEITA
BC817 SOT23 — BC807
BC817W SOT323 SC-70 BC807W
BC337 SOT54 (TO-92) SC-43A BC327
Also available in SOT54A and SOT54 variant

1.2. bc817w 3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC817W
NPN general purpose transistor
1999 Apr 15
Product specification
Supersedes data of 1997 Mar 05
Philips Semiconductors Product specification
NPN general purpose transistor BC817W
FEATURES PINNING
High current (max. 500 mA)
PIN DESCRIPTION
Low voltage (max. 45 V).
1 base
2 emitter
APPLICATIONS
3 collector
Gene

 1.3. bc817w.pdf Size:235K _secos

BC817 -16W, -25W, -40W
500 mA, 50 V
NPN Plastic Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES
? For general AF applications
A
L
? High collector current
3
3
? High current gain
Top View C B
? Low collector-emitter saturation voltage
1
1 2
2
K E
PACKAGE INFORMATION
D
Wei

1.4. bc817w.pdf Size:35K _kec

SEMICONDUCTOR BC817W
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES
M B M
Complementary to BC807W.
DIM MILLIMETERS
_
+
A 2.00 0.20
D
2
_
B 1.25 + 0.15
_
+
C 0.90 0.10
3
1
D 0.3+0.10/-0.05
_
E 2.10 + 0.20
MAXIMUM RATING (Ta=25 ) G 0.65
H 0.15+0.1/-0.06
CHARACTERISTIC SYMBOL RATING UNIT J 1.30
K 0.00~0.10
V

 1.5. bc817w.pdf Size:1232K _kexin

SMD Type Transistors
NPN Transistors
BC817W (KC817W)
■ Features
● For General AF Applications
● High Collector Current
● High Current Gain
● Low Collector-Emitter Saturation Voltage
● Complementary to BC807W
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 50
Collector — Emitter Volt

Другие транзисторы… 2PD1820AS
, 2PD601ARW
, 2PD601ASW
, 2PD601BRL
, 2PD601BSL
, BC807DS
, BC807W
, BC817DPN
, C103
, BC846AT
, BC846BT
, BC846S
, BC846T
, BC846W
, BC847BPN
, BC847BV
, BC847BVN
.

Биполярный транзистор BC817DPN — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC817DPN

Маркировка: N4

Тип материала: Si

Полярность: NPN*PNP

Максимальная рассеиваемая мощность (Pc): 0.6
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 5
pf

Статический коэффициент передачи тока (hfe): 160

Корпус транзистора: SOT457

BC817DPN
Datasheet (PDF)

1.1. bc817dpn.pdf Size:149K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DPN
NPN/PNP general purpose
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC817DPN
FEATURES QUICK REFERENCE DATA
High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
600 mW total power dissipation
VCEO collector-emitte

4.1. bc817ds.pdf Size:215K _upd

 DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DS
NPN general purpose double
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
FEATURES QUICK REFERENCE DATA
• High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
• 600 mW total power dissipation
VCEO colle

4.2. bc817ds.pdf Size:128K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DS
NPN general purpose double
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
FEATURES QUICK REFERENCE DATA
High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
600 mW total power dissipation
VCEO collector-em

Другие транзисторы… 2PD1820AR
, 2PD1820AS
, 2PD601ARW
, 2PD601ASW
, 2PD601BRL
, 2PD601BSL
, BC807DS
, BC807W
, 2SA1015
, BC817W
, BC846AT
, BC846BT
, BC846S
, BC846T
, BC846W
, BC847BPN
, BC847BV
.

Биполярный транзистор 2SD1521 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1521

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 10
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V

Макcимальный постоянный ток коллектора (Ic): 1.5
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 15000

Корпус транзистора: TO126

2SD1521
Datasheet (PDF)

1.1. 2sd1521.pdf Size:34K _hitachi

2SD1521
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3
1. Emitter ID
2. Collector
3. Base
1
2 kΩ 0.5 kΩ
2
3
(Typ) (Typ)
1
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 7V
Collector current IC 1.5 A
Collector peak current IC (peak) 3.0 A
Collector

4.1. 2sd1525.pdf Size:175K _toshiba

2SD1525
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1525
High Current Switching Applications
Unit: mm
• High collector current: IC = 30 A
• High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A)
• Monolithic construction with built-in base-emitter shunt resistor.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol

4.2. 2sd1520.pdf Size:373K _hitachi



 4.3. 2sd1527.pdf Size:32K _hitachi

2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
1. Base
2. Collector
(Flange)
1
3. Emitter
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage VCBO 1000 V
Collector to emitter voltage VCEO 1000 V
Emitter to base voltage VEBO 5V
Collector current IC 0.5 A
Collector power dissipation PC 1.8 W

4.4. 2sd1522.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1522
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 450V(Min)
(BR)CEO
·High DC Current Gain
: h = 500(Min) @ I = 5A, V = 3V
FE C CE
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and

 4.5. 2sd1523.pdf Size:209K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1523
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 450V(Min)
(BR)CEO
·High DC Current Gain
: h = 500(Min) @ I = 8A, V = 3V
FE C CE
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and

4.6. 2sd1525.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor 2SD1525
DESCRIPTION
·High DC Current Gain
: h = 1000(Min.)@ I = 20A
FE C
·Collector-Emitter Breakdown Voltage-
: V = 100V(Min.)
(BR)CEO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMET

4.7. 2sd1524.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1524
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 450V(Min)
(BR)CEO
·High DC Current Gain
: h = 300(Min) @ I = 5A, V = 3V
FE C CE
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and

4.8. 2sd1528.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD1528
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 2A
CE(sat) C
·Collector-Emitter Breakdown Voltage-
: V = 80V (Min)
(BR)CEO
·Good Linearity of h
FE
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier,power switching appli

Другие транзисторы… 2SD1516
, 2SD1517
, 2SD1518
, 2SD1519
, 2SD152
, 2SD1520
, 2SD1520L
, 2SD1520S
, 2N4401
, 2SD1522
, 2SD1523
, 2SD1524
, 2SD1525
, 2SD1526
, 2SD1527
, 2SD1528
, 2SD1529
.

BC817-40L Datasheet (PDF)

1.1. bc817-25lg bc817-40lg.pdf Size:570K _upd

BC817 SERIES
General Purpose Transistors
BC817-16/25/40LG
BC817-16LG,
BC817-25LG,BC817-40LG
SERIES
Features 3
• Pb-Free Packages are Available
1
2
Maximum Ratings
Rating Symbol Value Unit
SOT-23
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
COLLECTOR
Emitter-Base Voltage VEBO 5.0 V 3
Collector Current — Continuous IC 500 mAdc
1
BASE
2
EMITTER
Devi

1.2. bc817-16lt3g bc817-40lt3g.pdf Size:89K _upd

BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
Features 3
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; 1
BASE
AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
2
Complian

 1.3. bc817-25lt1g bc817-40lt1g.pdf Size:125K _upd

BC817-16LT1G,
BC817-25LT1G,
BC817-40LT1G
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
Features 3
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
1
Compliant
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector — Emitter Voltage VCEO 45 V
3
Collector — Base Voltage VCBO 50 V
Emitter — Base Voltage VEBO 5.0 V
1
2
Collect

1.4. sbc817-40lt3g.pdf Size:89K _onsemi

BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
Features 3
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; 1
BASE
AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
2
Complian

 1.5. sbc817-40lt1g.pdf Size:89K _onsemi

BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
Features 3
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; 1
BASE
AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
2
Complian

1.6. lbc817-40lt1g.pdf Size:280K _lrc

LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G
LBC817-25LT1G
General Purpose Transistors
LBC817-40LT1G
NPN Silicon
S-LBC817-16LT1G
S-LBC817-25LT1G
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and
S-LBC817-40LT1G
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
MA

BC817DPN Datasheet (PDF)

1.1. bc817dpn.pdf Size:149K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DPN
NPN/PNP general purpose
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC817DPN
FEATURES QUICK REFERENCE DATA
High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
600 mW total power dissipation
VCEO collector-emitte

4.1. bc817ds.pdf Size:215K _upd

 DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DS
NPN general purpose double
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
FEATURES QUICK REFERENCE DATA
• High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
• 600 mW total power dissipation
VCEO colle

4.2. bc817ds.pdf Size:128K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DS
NPN general purpose double
transistor
Product data sheet 2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
FEATURES QUICK REFERENCE DATA
High current (500 mA)
SYMBOL PARAMETER MAX. UNIT
600 mW total power dissipation
VCEO collector-em

Биполярный транзистор BC817-40W — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC817-40W

Маркировка: 6C_6C-_6Cp_6Cs_6Ct_6CW

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.25
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 200
MHz

Ёмкость коллекторного перехода (Cc): 10
pf

Статический коэффициент передачи тока (hfe): 250

Корпус транзистора: SOT323

BC817-40W
Datasheet (PDF)

1.1. bc817-40wt1g.pdf Size:66K _upd

BC817-40W
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817-40W is a General Purpose NPN
Transistor that is housed in the SC-70/SOT-323 package.
Features
www.onsemi.com
• AEC-Q101 Qualified and Consult Factory for PPAP Capable
• This Device is Pb-Free, Halogen Free/BFR Free and is RoHS
COLLECTOR
Compliant
3
1
BASE
MAXIMUM RATINGS (TA = 25°C)
Rating Symbo

1.2. bc817-40wt1.pdf Size:287K _willas

FM120-M
WILLAS
THRU
BC817-40WT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123 PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize boa

 1.3. lbc817-40wt1g.pdf Size:170K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
LBC817-40WT1G
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-LBC817-40WT1G
3
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
Collector–Emit

Другие транзисторы… BC817-16
, BC817-16LT1
, BC817-16W
, BC817-25
, BC817-25LT1
, BC817-25W
, BC817-40
, BC817-40LT1
, MPSA42
, BC818
, BC818-16
, BC818-16W
, BC818-25
, BC818-25W
, BC818-40
, BC818-40W
, BC827
.

KTB817B Datasheet (PDF)

1.1. ktb817b.pdf Size:688K _kec

SEMICONDUCTOR KTB817B
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
·Complementary to KTD1047B.
·Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
VCBO -160 V
Collector-Base Voltage
VCEO -140 V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage -6 V
IC
DC -12
C

4.1. ktb817.pdf Size:392K _kec

SEMICONDUCTOR KTB817
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
FEATURES
Complementary to KTD1047.
Recommended for 60W Audio Frequency
DIM MILLIMETERS
Amplifier Output Stage.
A 15.9 MAX
B 4.8 MAX
_
C 20.0 + 0.3
_
D 2.0 + 0.3
D
d 1.0+0.3/-0.25
E 2.0
F 1.0
MAXIMUM RATING (Ta=25 )
G 3.3 MAX
d
H 9.0
CHARACTERISTIC SYMBOL RATING