Однотактный усилитель хьюстона класса а на 2sk1058 mosfet-е. zca
Содержание:
- 2SK1059-Z Datasheet (PDF)
- Связанные материалы
- 2SJ162 Datasheet (PDF)
- 2SK105 Datasheet (PDF)
- 2SK1057 Datasheet (PDF)
- 2SJ162 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
- 2SJ162 Datasheet (PDF)
- 2SK1081-01 Datasheet (PDF)
- 2SK1058 Datasheet (PDF)
- 2SK1059 Datasheet (PDF)
- 2SK1056 Datasheet (PDF)
- 2SK2221 Datasheet (PDF)
2SK1059-Z Datasheet (PDF)
1.1. 2sk1059-z.pdf Size:277K _update
3.1. 2sk1059.pdf Size:280K _nec
4.1. 2sk1052.pdf Size:104K _sanyo
Ordering number:EN3439
N-Channel Silicon MOSFET
2SK1052
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-state resistance.
unit:mm
Ultrahigh-speed switching.
2052C
10.2
4.5
3.6
5.1
1.3
1.2
1 : Gate
0.8
0.4
2 : Drain
1 2 3
3 : Source
EIAJ : SC-46
2.55 2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parame
4.2. 2sk1053.pdf Size:106K _sanyo
Ordering number:EN3440
N-Channel Silicon MOSFET
2SK1053
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-state resistance.
unit:mm
Ultrahigh-speed switching.
2052C
10.2
4.5
3.6
5.1
1.3
1.2
1 : Gate
0.8
0.4
2 : Drain
1 2 3
3 : Source
EIAJ : SC-46
2.55 2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parame
4.3. rej03g0906 2sk1056 2sk1057 2sk1058.pdf Size:85K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
4.4. 2sk1057 2sk1058.pdf Size:55K _hitachi
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAM
4.5. 2sk1056 2sk1057 2sk1058.pdf Size:40K _hitachi
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
4.6. 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf Size:53K _interfet
Databook.fxp 1/14/99 2:03 PM Page D-2
D-2 01/99
Japanese Equivalent JFET Types
Silicon Junction Field-Effect Transistors
2SK17 2SK40 2SK59 2SK105
Japanese
IFN17 IFN40 IFN59 IFN105
InterFET
NJ16 NJ16 NJ16 NJ16
Process
Unit N N N N
Parameters Conditions Limit Channel Channel Channel Channel
V
BVGSS IG = – 1.0 µA – 20 – 50 – 30 – 50
Min
nA 0.10 1.0 1.0 1.0
IGSS VGS = ( )
4.7. 2sk1052.pdf Size:200K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1052
DESCRIPTION
·Drain Current –I =0.5A@ T =25℃
D C
·Drain Source Voltage-
: V = 450V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and re
4.8. 2sk1053.pdf Size:200K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1053
DESCRIPTION
·Drain Current –I =1A@ T =25℃
D C
·Drain Source Voltage-
: V = 450V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and rela
Связанные материалы
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Этот усилитель я собрал 4 месяца назад на работе из того, что было под рукой. Название усилителя…
2SJ162 Datasheet (PDF)
1.1. rej03g0847 2sj160 2sj161 2sj162.pdf Size:83K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
1.2. 2sj160 2sj161 2sj162.pdf Size:38K _hitachi
2SJ160, 2SJ161, 2SJ162
Silicon P-Channel MOS FET
ADE-208-1182 (Z)
1st. Edition
Mar. 2001
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diode
5.1. 2sj168.pdf Size:330K _toshiba
2SJ168
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications
Unit: mm
Analog Switch Applications
Interface Applications
• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Y | = 100 mS (min)
fs
@I = -50 mA
D
• Low on resistance: R = 1.3 ? (typ.) @ I = -50 mA
DS (ON) D
• Enhancement-mo
5.2. 2sj167.pdf Size:294K _toshiba
2SJ167
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ167
High Speed Switching Applications
Unit: mm
Analog Switch Applications
Interface Applications
• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Y | = 100 mS (min)
fs
• Low on resistance: R = 1.3 ? (typ.)
DS (ON)
• Enhancement-mode
• Complementary to 2SK106
5.3. 2sj166.pdf Size:350K _nec
5.4. 2sj165.pdf Size:384K _nec
5.5. 2sj164.pdf Size:27K _panasonic
Silicon Junction FETs (Small Signal) 2SJ164
2SJ164
Silicon P-Channel Junction
Unit : mm
For switching
4.0 0.2
Complementary with 2SK1104
Features
Low ON-resistance
Low-noise characteristics
marking
1 2 3
Absolute Maximum Ratings (Ta = 25?C)
Parameter Symbol Rating Unit
1.27 1.27
1 : Source
Gate-Drain voltage VGDS 65 V 2.54 0.15
2 : Gate
Drain current ID 20 mA
3 : Drain
G
5.6. 2sj163.pdf Size:29K _panasonic
Silicon Junction FETs (Small Signal) 2SJ163
2SJ163
Silicon P-Channel Junction
Unit : mm
For general use switching
+0.2
2.8 0.3
Complementary with 2SK1103 +0.25
0.65 0.15 1.5 0.05 0.65 0.15
Features
1
Low ON-resistance
Low-noise characteristics
3
2
Absolute Maximum Ratings (Ta = 25?C)
Parameter Symbol Rating Unit
0.1 to 0.3
Gate-Drain voltage VGDS 65 V
0.4 0.2
Drain cur
5.7. 2sj169 2sj170.pdf Size:119K _hitachi
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5.8. 2sj166.pdf Size:1307K _kexin
SMD Type MOSFET
P-Channel MOSFET
2SJ166
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-50V
● ID =-0.1 A (VGS =-10V) 1 2
+0.1
+0.05
0.95-0.1 0.1-0.01
● RDS(ON) ＜ 50Ω (VGS =-4V)
+0.1
1.9-0.1
● Comp;ementary to 2SK1132
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage
5.9. 2sj166-3.pdf Size:1317K _kexin
SMD Type MOSFET
P-Channel MOSFET
2SJ166
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-50V
● ID =-0.1 A (VGS =-10V)
1 2
+0.02
+0.1
0.15 -0.02
0.95-0.1
● RDS(ON) ＜ 50Ω (VGS =-4V)
+0.1
1.9-0.2
● Comp;ementary to 2SK1132
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source V
2SK105 Datasheet (PDF)
1.1. 2sk1059-z.pdf Size:277K _update
1.2. 2sk1052.pdf Size:104K _sanyo
Ordering number:EN3439
N-Channel Silicon MOSFET
2SK1052
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-state resistance.
unit:mm
Ultrahigh-speed switching.
2052C
10.2
4.5
3.6
5.1
1.3
1.2
1 : Gate
0.8
0.4
2 : Drain
1 2 3
3 : Source
EIAJ : SC-46
2.55 2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parame
1.3. 2sk1053.pdf Size:106K _sanyo
Ordering number:EN3440
N-Channel Silicon MOSFET
2SK1053
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-state resistance.
unit:mm
Ultrahigh-speed switching.
2052C
10.2
4.5
3.6
5.1
1.3
1.2
1 : Gate
0.8
0.4
2 : Drain
1 2 3
3 : Source
EIAJ : SC-46
2.55 2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parame
1.4. rej03g0906 2sk1056 2sk1057 2sk1058.pdf Size:85K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
1.5. 2sk1059.pdf Size:280K _nec
1.6. 2sk1057 2sk1058.pdf Size:55K _hitachi
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAM
1.7. 2sk1056 2sk1057 2sk1058.pdf Size:40K _hitachi
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
1.8. 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf Size:53K _interfet
Databook.fxp 1/14/99 2:03 PM Page D-2
D-2 01/99
Japanese Equivalent JFET Types
Silicon Junction Field-Effect Transistors
2SK17 2SK40 2SK59 2SK105
Japanese
IFN17 IFN40 IFN59 IFN105
InterFET
NJ16 NJ16 NJ16 NJ16
Process
Unit N N N N
Parameters Conditions Limit Channel Channel Channel Channel
V
BVGSS IG = – 1.0 µA – 20 – 50 – 30 – 50
Min
nA 0.10 1.0 1.0 1.0
IGSS VGS = ( )
1.9. 2sk1052.pdf Size:200K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1052
DESCRIPTION
·Drain Current –I =0.5A@ T =25℃
D C
·Drain Source Voltage-
: V = 450V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and re
1.10. 2sk1053.pdf Size:200K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1053
DESCRIPTION
·Drain Current –I =1A@ T =25℃
D C
·Drain Source Voltage-
: V = 450V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and rela
2SK1057 Datasheet (PDF)
1.1. rej03g0906 2sk1056 2sk1057 2sk1058.pdf Size:85K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
1.2. 2sk1057 2sk1058.pdf Size:55K _hitachi
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAM
1.3. 2sk1056 2sk1057 2sk1058.pdf Size:40K _hitachi
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SJ162 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ162
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 100
W
Предельно допустимое напряжение сток-исток (Uds): 160
V
Предельно допустимое напряжение затвор-исток (Ugs): 15
V
Максимально допустимый постоянный ток стока (Id): 7
A
Максимальная температура канала (Tj): 150
°C
Выходная емкость (Cd): 400
pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4
Ohm
Тип корпуса: TO3P
2SJ162
Datasheet (PDF)
1.1. rej03g0847 2sj160 2sj161 2sj162.pdf Size:83K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
1.2. 2sj160 2sj161 2sj162.pdf Size:38K _hitachi
2SJ160, 2SJ161, 2SJ162
Silicon P-Channel MOS FET
ADE-208-1182 (Z)
1st. Edition
Mar. 2001
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diode
5.1. 2sj168.pdf Size:330K _toshiba
2SJ168
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications
Unit: mm
Analog Switch Applications
Interface Applications
• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Y | = 100 mS (min)
fs
@I = -50 mA
D
• Low on resistance: R = 1.3 ? (typ.) @ I = -50 mA
DS (ON) D
• Enhancement-mo
5.2. 2sj167.pdf Size:294K _toshiba
2SJ167
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ167
High Speed Switching Applications
Unit: mm
Analog Switch Applications
Interface Applications
• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Y | = 100 mS (min)
fs
• Low on resistance: R = 1.3 ? (typ.)
DS (ON)
• Enhancement-mode
• Complementary to 2SK106
5.3. 2sj166.pdf Size:350K _nec
5.4. 2sj165.pdf Size:384K _nec
5.5. 2sj164.pdf Size:27K _panasonic
Silicon Junction FETs (Small Signal) 2SJ164
2SJ164
Silicon P-Channel Junction
Unit : mm
For switching
4.0 0.2
Complementary with 2SK1104
Features
Low ON-resistance
Low-noise characteristics
marking
1 2 3
Absolute Maximum Ratings (Ta = 25?C)
Parameter Symbol Rating Unit
1.27 1.27
1 : Source
Gate-Drain voltage VGDS 65 V 2.54 0.15
2 : Gate
Drain current ID 20 mA
3 : Drain
G
5.6. 2sj163.pdf Size:29K _panasonic
Silicon Junction FETs (Small Signal) 2SJ163
2SJ163
Silicon P-Channel Junction
Unit : mm
For general use switching
+0.2
2.8 0.3
Complementary with 2SK1103 +0.25
0.65 0.15 1.5 0.05 0.65 0.15
Features
1
Low ON-resistance
Low-noise characteristics
3
2
Absolute Maximum Ratings (Ta = 25?C)
Parameter Symbol Rating Unit
0.1 to 0.3
Gate-Drain voltage VGDS 65 V
0.4 0.2
Drain cur
5.7. 2sj169 2sj170.pdf Size:119K _hitachi
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5.8. 2sj166.pdf Size:1307K _kexin
SMD Type MOSFET
P-Channel MOSFET
2SJ166
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-50V
● ID =-0.1 A (VGS =-10V) 1 2
+0.1
+0.05
0.95-0.1 0.1-0.01
● RDS(ON) ＜ 50Ω (VGS =-4V)
+0.1
1.9-0.1
● Comp;ementary to 2SK1132
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage
5.9. 2sj166-3.pdf Size:1317K _kexin
SMD Type MOSFET
P-Channel MOSFET
2SJ166
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-50V
● ID =-0.1 A (VGS =-10V)
1 2
+0.02
+0.1
0.15 -0.02
0.95-0.1
● RDS(ON) ＜ 50Ω (VGS =-4V)
+0.1
1.9-0.2
● Comp;ementary to 2SK1132
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source V
Другие MOSFET… 2SJ79
, 2SK1056
, 2SK1057
, 2SK1058
, 2SK2220
, 2SK2221
, 2SJ160
, 2SJ161
, IRFP260M
, 2SJ351
, 2SJ352
, RQA0011DNS
, RQA0004PXDQS
, RQA0005QXDQS
, RQA0010VXDQS
, RQA0008RXDQS
, RQA0009TXDQS
.
2SK1081-01 Datasheet (PDF)
1.1. 2sk1081-01.pdf Size:165K _fuji
3.1. 2sk1081.pdf Size:203K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1081
DESCRIPTION
·Drain Current –I =7A@ T =25℃
D C
·Drain Source Voltage-
: V =800V(Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL ARAMETER VALUE UNIT
V Drain-Source Voltage (V =0) 8
4.1. 2sk1089.pdf Size:183K _update
N-channel MOS-FET
2SK1089
F-III Series 60V 0,035Ω 35A 80W
> Features > Outline Drawing
— High Current
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Forward Transconductance
> Applications
— Motor Control
— General Purpose Power Amplifier
— DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
— Absolute Maximum Ratings (TC=25°C),
4.2. 2sk1085-m.pdf Size:175K _update-mosfet
N-channel MOS-FET
2SK1085-M
F-III Series 150V 0,9Ω 3A 20W
> Features > Outline Drawing
— High Current
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Forward Transconductance
> Applications
— Motor Control
— General Purpose Power Amplifier
— DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
— Absolute Maximum Ratings (TC=25°C),
4.3. 2sk1082-01.pdf Size:163K _fuji
4.4. 2sk1082.pdf Size:1246K _fuji
4.5. 2sk1089.pdf Size:183K _fuji
N-channel MOS-FET
2SK1089
F-III Series 60V 0,035Ω 35A 80W
> Features > Outline Drawing
— High Current
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Forward Transconductance
> Applications
— Motor Control
— General Purpose Power Amplifier
— DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
— Absolute Maximum Ratings (TC=25°C),
4.6. 2sk1085-m.pdf Size:175K _fuji
N-channel MOS-FET
2SK1085-M
F-III Series 150V 0,9Ω 3A 20W
> Features > Outline Drawing
— High Current
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Forward Transconductance
> Applications
— Motor Control
— General Purpose Power Amplifier
— DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
— Absolute Maximum Ratings (TC=25°C),
4.7. 2sk1086.pdf Size:143K _fuji
4.8. 2sk1082.pdf Size:203K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1082
DESCRIPTION
·Drain Current –I =6A@ T =25℃
D C
·Drain Source Voltage-
: V =900V(Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL ARAMETER VALUE UNIT
V Drain-Source Voltage (V =0) 9
4.9. 2sk1085-m.pdf Size:200K _inchange_semiconductor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor 2SK1085-M
·FEATURES
·With TO-220F packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBO
2SK1058 Datasheet (PDF)
1.1. rej03g0906 2sk1056 2sk1057 2sk1058.pdf Size:85K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
1.2. 2sk1057 2sk1058.pdf Size:55K _hitachi
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAM
1.3. 2sk1056 2sk1057 2sk1058.pdf Size:40K _hitachi
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SK1059 Datasheet (PDF)
1.1. 2sk1059-z.pdf Size:277K _update
1.2. 2sk1059.pdf Size:280K _nec
4.1. 2sk1052.pdf Size:104K _sanyo
Ordering number:EN3439
N-Channel Silicon MOSFET
2SK1052
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-state resistance.
unit:mm
Ultrahigh-speed switching.
2052C
10.2
4.5
3.6
5.1
1.3
1.2
1 : Gate
0.8
0.4
2 : Drain
1 2 3
3 : Source
EIAJ : SC-46
2.55 2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parame
4.2. 2sk1053.pdf Size:106K _sanyo
Ordering number:EN3440
N-Channel Silicon MOSFET
2SK1053
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-state resistance.
unit:mm
Ultrahigh-speed switching.
2052C
10.2
4.5
3.6
5.1
1.3
1.2
1 : Gate
0.8
0.4
2 : Drain
1 2 3
3 : Source
EIAJ : SC-46
2.55 2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parame
4.3. rej03g0906 2sk1056 2sk1057 2sk1058.pdf Size:85K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
4.4. 2sk1057 2sk1058.pdf Size:55K _hitachi
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAM
4.5. 2sk1056 2sk1057 2sk1058.pdf Size:40K _hitachi
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
4.6. 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf Size:53K _interfet
Databook.fxp 1/14/99 2:03 PM Page D-2
D-2 01/99
Japanese Equivalent JFET Types
Silicon Junction Field-Effect Transistors
2SK17 2SK40 2SK59 2SK105
Japanese
IFN17 IFN40 IFN59 IFN105
InterFET
NJ16 NJ16 NJ16 NJ16
Process
Unit N N N N
Parameters Conditions Limit Channel Channel Channel Channel
V
BVGSS IG = – 1.0 µA – 20 – 50 – 30 – 50
Min
nA 0.10 1.0 1.0 1.0
IGSS VGS = ( )
4.7. 2sk1052.pdf Size:200K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1052
DESCRIPTION
·Drain Current –I =0.5A@ T =25℃
D C
·Drain Source Voltage-
: V = 450V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and re
4.8. 2sk1053.pdf Size:200K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1053
DESCRIPTION
·Drain Current –I =1A@ T =25℃
D C
·Drain Source Voltage-
: V = 450V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and rela
2SK1056 Datasheet (PDF)
1.1. rej03g0906 2sk1056 2sk1057 2sk1058.pdf Size:85K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
1.2. 2sk1056 2sk1057 2sk1058.pdf Size:40K _hitachi
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
4.1. 2sk1059-z.pdf Size:277K _update
4.2. 2sk1052.pdf Size:104K _sanyo
Ordering number:EN3439
N-Channel Silicon MOSFET
2SK1052
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-state resistance.
unit:mm
Ultrahigh-speed switching.
2052C
10.2
4.5
3.6
5.1
1.3
1.2
1 : Gate
0.8
0.4
2 : Drain
1 2 3
3 : Source
EIAJ : SC-46
2.55 2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parame
4.3. 2sk1053.pdf Size:106K _sanyo
Ordering number:EN3440
N-Channel Silicon MOSFET
2SK1053
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-state resistance.
unit:mm
Ultrahigh-speed switching.
2052C
10.2
4.5
3.6
5.1
1.3
1.2
1 : Gate
0.8
0.4
2 : Drain
1 2 3
3 : Source
EIAJ : SC-46
2.55 2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parame
4.4. 2sk1059.pdf Size:280K _nec
4.5. 2sk1057 2sk1058.pdf Size:55K _hitachi
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAM
4.6. 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf Size:53K _interfet
Databook.fxp 1/14/99 2:03 PM Page D-2
D-2 01/99
Japanese Equivalent JFET Types
Silicon Junction Field-Effect Transistors
2SK17 2SK40 2SK59 2SK105
Japanese
IFN17 IFN40 IFN59 IFN105
InterFET
NJ16 NJ16 NJ16 NJ16
Process
Unit N N N N
Parameters Conditions Limit Channel Channel Channel Channel
V
BVGSS IG = – 1.0 µA – 20 – 50 – 30 – 50
Min
nA 0.10 1.0 1.0 1.0
IGSS VGS = ( )
4.7. 2sk1052.pdf Size:200K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1052
DESCRIPTION
·Drain Current –I =0.5A@ T =25℃
D C
·Drain Source Voltage-
: V = 450V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and re
4.8. 2sk1053.pdf Size:200K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1053
DESCRIPTION
·Drain Current –I =1A@ T =25℃
D C
·Drain Source Voltage-
: V = 450V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and rela
2SK2221 Datasheet (PDF)
1.1. rej03g1004 2sk2220 2sk2221.pdf Size:85K _renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re
1.2. 2sk2220 2sk2221.pdf Size:55K _hitachi
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAM
1.3. 2sk2221.pdf Size:211K _inchange_semiconductor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor 2SK2221
·FEATURES
·Drain Current I = 8A@ T =25℃
D C
·Drain Source Voltage-
: V = 200V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.3Ω(Max)
DS(on)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·High efficiency switch
