4n60

Содержание:

FQP2N60C Datasheet (PDF)
4N60P Datasheet (PDF)
FQD2N60C Datasheet (PDF)
SSS4N60 Datasheet (PDF)
SSS2N60A Datasheet (PDF)
CM4N60F Datasheet (PDF)
FQU2N60C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
FQU2N60C Datasheet (PDF)
SW4N60 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
SW4N60 Datasheet (PDF)
FQPF10N60C Datasheet (PDF)
FQP5N60C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
FQP5N60C Datasheet (PDF)
SW4N60 Datasheet (PDF)
SSS4N60AS Datasheet (PDF)
CM4N60C Datasheet (PDF)
FQU1N60C Datasheet (PDF)

FQP2N60C Datasheet (PDF)

1.1. fqp2n60c fqpf2n60c.pdf Size:1366K _fairchild_semi

April 2006

QFET
FQP2N60C/FQPF2N60C
2.0A, 600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • rDS(on) = 4.7Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 8.5 nC)
planar stripe, DMOS technology.
• Low Crss (typical 4.3 pF)
This advanced technology has been especially tailo

3.1. fqp2n60.pdf Size:1331K _fairchild_semi

April 2006

5.1. fqp2n80.pdf Size:649K _fairchild_semi

September 2000
TM
QFET
FQP2N80
800V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has been especially tailo

5.2. fqp2n50.pdf Size:712K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

500V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 2.1A, 500V, RDS(on) = 5.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 4.0 pF)
This advanced technology has been

5.3. fqp2n90.pdf Size:744K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

900V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 2.2A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has bee

5.4. fqp2n40.pdf Size:989K _fairchild_semi

October 2013
FQP2N40
N-Channel QFET MOSFET
400 V, 1.8 A, 5.8 Ω
Description Features
This N-Channel enhancement mode power MOSFET is • 1.8 A, 400 V, RDS(on) = 5.8 Ω (Max.) @ VGS = 10 V,
ID = 0.9 A
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
• Low Gate Charge (Typ. 4.0 nC)
MOSFET technology has been especially ta

5.5. fqp2na90.pdf Size:699K _fairchild_semi

September 2000
TM
QFET
QFET
QFET
QFET
FQP2NA90
900V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.5 pF)
This advanced technology has

5.6. fqp2n30.pdf Size:727K _fairchild_semi

May 2000
TM
QFET
QFET
QFET
QFET

300V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 2.1A, 300V, RDS(on) = 3.7Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 3.7 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 3.0 pF)
This advanced technology has been es

4N60P Datasheet (PDF)

10n60

1.1. ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf Size:141K _ixys

IXTA4N60P VDSS = 600 V
PolarHVTM
IXTP4N60P ID25 = 4 A
Power MOSFET
IXTU4N60P RDS(on) ≤ 2.0 Ω
≤ Ω
≤ Ω
≤ Ω
≤ Ω
N-Channel Enhancement Mode
IXTY4N60P
Avalanche Rated
TO-263 (IXTA)
G
S
Symbol Test Conditions Maximum Ratings
(TAB)
VDSS TJ = 25°C to 150°C 600 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V
TO-220 (IXTP)
VGSS Continuous ±30 V
VGSM Transient ±40 V

1.2. ixfc14n60p.pdf Size:229K _ixys

IXFC 14N60P VDSS = 600 V
PolarHVTM HiPerFET
ID25 = 8 A
Power MOSFET
≤ Ω
RDS(on) ≤ 630 mΩ
≤ Ω
≤ Ω
≤ Ω
ISOPLUS220TM
≤
trr ≤ 200 ns
≤
≤
≤
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
ISOPLUS220TM (IXFC)
E153432
VDSS TJ = 25° C to 150° C 600 V
VDGR TJ

1.3. ixfp14n60p3.pdf Size:180K _ixys

Advance Technical Information
Polar3 TM HiPerFETTM VDSS = 600V
IXFA14N60P3
Power MOSFETs ID25 = 14A
IXFP14N60P3
≤ Ω
RDS(on) ≤ Ω
≤ 540mΩ
≤ Ω
≤ Ω
IXFH14N60P3
N-Channel Enhancement Mode
TO-263 AA (IXFA)
Avalanche Rated
Fast Intrinsic Rectifier
G
S
D (Tab)
Symbol Test Conditions Maximum Ratings
TO-220AB (IXFP)
VDSS TJ = 25°C to 150°C 600 V
VDGR TJ = 25°C to 15

1.4. ixfk64n60p ixfx64n60p.pdf Size:169K _ixys

IXFK 64N60P
VDSS = 600 V
PolarHVTM HiPerFET
IXFX 64N60P
ID25 = 64 A
Power MOSFET
≤ Ω
RDS(on) ≤ 96 mΩ
≤ Ω
≤ Ω
≤ Ω
N-Channel Enhancement Mode
≤
trr ≤ 200 ns
≤
≤
≤
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
TO-264 (IXFK)
VDSS TJ = 25° C to 150° C 600 V
VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V
VGSS Contin

1.5. ixfr64n60p.pdf Size:151K _ixys

VDSS = 600 V
PolarHVTM HiPerFET IXFR 64N60P
ID25 = 36 A
Power MOSFET
≤ Ω
RDS(on) ≤ 105 mΩ
≤ Ω
≤ Ω
≤ Ω
≤
trr ≤ 200 ns
≤
≤
≤
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
ISOPLUS247 (IXFR)
E153432
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25° C to 150° C 600 V
VDGR TJ = 25° C to 15

1.6. ixta14n60p ixtq14n60p ixtp14n60p.pdf Size:147K _ixys

IXTA 14N60P VDSS = 600 V
PolarHVTM
IXTP 14N60P ID25 = 14 A
Power MOSFET
≤ Ω
IXTQ 14N60P RDS(on) ≤ 550 mΩ
≤ Ω
≤ Ω
≤ Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
TO-263 (IXTA)
VDSS TJ = 25°C to 150°C 600 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V
G
VGS Continuous ±30 V S
(TAB)
VGSM Tranisent ±40 V
ID25 TC = 25°C14 A

1.7. ixfa14n60p ixfh14n60p ixfp14n60p.pdf Size:257K _ixys

IXFA 14N60P VDSS = 600 V
PolarHVTM HiPerFET
IXFH 14N60P ID25 = 14 A
Power MOSFET
≤ Ω
IXFP 14N60P RDS(on) ≤ 550 mΩ
≤ Ω
≤ Ω
≤ Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263 (IXFA)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25° C to 150° C 600 V
G
VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V S
(TAB)
VGS Continuous ±30 V
V

1.8. ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf Size:163K _ixys

Advance Technical Information
Polar3 TM HiPerFETTM VDSS = 600V
IXFY4N60P3
Power MOSFETs ID25 = 4A
IXFA4N60P3
≤ Ω
RDS(on) ≤ Ω
≤ 2.2Ω
≤ Ω
≤ Ω
IXFP4N60P3
N-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXFY)
Fast Intrinsic Rectifier
G
S
D (Tab)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 600 V TO-263 AA (IXFA)
VDGR TJ = 25°C to 150°C, RG

1.9. ixfa14n60p3 ixfh14n60p3.pdf Size:173K _ixys

1.10. ixfn64n60p.pdf Size:148K _ixys

VDSS = 600 V
IXFN 64N60P
PolarHVTM HiPerFET
ID25 = 50 A
Power MOSFET
≤ Ω
RDS(on) ≤ 96 mΩ
≤ Ω
≤ Ω
≤ Ω
≤
trr ≤ 200 ns
≤
≤
≤
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227 B (IXFN)
E153432
S
Symbol Test Conditions Maximum Ratings G
VDSS TJ = 25°C to 150°C 600 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V
S

1.11. 4n60d 4n60f 4n60i 4n60p.pdf Size:794K _wietron

4N60
Surface Mount N-Channel Power MOSFET
DRAIN CURRENT
P b Lead(Pb)-Free
4 AMPERES
DRAIN SOURCE VOLTAGE
Description:
600 VOLTAGE
The WEITRON 4N60 is a high voltage MOSFET and is designed
to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used
at high sp

1.12. ftk4n60p f d i.pdf Size:171K _first_silicon

SEMICONDUCTOR
FTK4N60P / F / D / I
TECHNICAL DATA
Power MOSFET
4 Amps, 600 Volt
I :
N-CHANNEL POWER MOSFET
1
TO — 251
D :
DESCRIPTION
1
TO — 252
The FTK 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
P :
characteristics. This power MOSFET is usua

FQD2N60C Datasheet (PDF)

8n60c

1.1. fqd2n60ctm.pdf Size:557K _fairchild_semi

November 2013
FQD2N60C / FQU2N60C
N-Channel QFET MOSFET
600 V, 1.9 A, 4.7 Ω
Features Description
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is
ID = 0.95 A
produced using Fairchild Semiconductor’s proprietary
• Low Gate Charge (Typ. 8.5 nC)
planar stripe and DMOS technology. This advanced
• Low Crss (Typ. 4.3 pF)

1.2. fqd2n60c fqu2n60c fqu2n60ctu.pdf Size:762K _fairchild_semi

January 2009
QFET
FQD2N60C/FQU2N60C
600V N-Channel MOSFET
Features Description
• 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge (typical 8.5 nC)
DMOS technology.
• Low Crss (typical 4.3 pF)
This advanced technology has been especially tail

3.1. fqd2n60tf fqd2n60tm fqu2n60tu.pdf Size:560K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD2N60 / FQU2N60
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.0 pF)
This advanced technology

SSS4N60 Datasheet (PDF)

2n60

1.1. ssp4n60b sss4n60b.pdf Size:888K _upd-mosfet

SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC)
planar, DMOS technology.
• Low Crss ( typical 14 pF)
This advanced technology has been especially tailored to
• Fast switchi

1.2. ssp4n60b sss4n60b.pdf Size:888K _fairchild_semi

1.3. sss4n60as.pdf Size:501K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 600 V
Avalanche Rugged Technology
RDS(on) = 2.2 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 2.3 A
Improved Gate Charge
Extended Safe Operating Area

Lower Leakage Current : 25 A (Max.) @ VDS = 600V
Lower RDS(ON) : 2.037 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Unit

1.4. irfs8xx irfs9xxx sss4n60 sss6n60.pdf Size:26K _samsung

SSS2N60A Datasheet (PDF)

1.1. sss2n60a.pdf Size:507K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 600 V
Avalanche Rugged Technology
RDS(on) = 5
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 1.3 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 600V
Lower RDS(ON) : 3.892 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units

3.1. ssp2n60b sss2n60b.pdf Size:862K _fairchild_semi

SSP2N60B/SSS2N60B
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC)
planar, DMOS technology.
• Low Crss ( typical 7.6 pF)
This advanced technology has been especially tailored to
• Fast swit

5.1. sss2n80a.pdf Size:914K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 800 V
Avalanche Rugged Technology
RDS(on) = 6.0 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 1.5 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 800V
Low RDS(ON) : 4.688 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units
V

5.2. sss2n90a.pdf Size:505K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 900 V
Avalanche Rugged Technology
RDS(on) = 7.0
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 1.5 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 900V
Low RDS(ON) : 5.838 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units

CM4N60F Datasheet (PDF)

1.1. cm4n60f.pdf Size:128K _jdsemi

R
CM4N60F
深圳市晶导电子有限公司
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
◆符合 RoHS 等环保指令要求
1．主要用途
主要用于 LD
E 驱动、电源适配器
等各类功率开关电路
2．主要特点
开关速度快
1
通态电阻小，输入电容小
2
3．

4.1. cm4n60c.pdf Size:144K _jdsemi

R
CM4N60C
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
◆符合 RoHS 等

4.2. cm4n60.pdf Size:145K _jdsemi

R
CM4N60
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
◆符合 RoHS 等

4.3. cm4n60c to251.pdf Size:144K _jdsemi

FQU2N60C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQU2N60C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 44
W

Предельно допустимое напряжение сток-исток (Uds): 600
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Максимально допустимый постоянный ток стока (Id): 1.9
A

Максимальная температура канала (Tj): 150
°C

Сопротивление сток-исток открытого транзистора (Rds): 4.7
Ohm

Тип корпуса: TO251, IPAK

FQU2N60C
Datasheet (PDF)

1.1. fqd2n60c fqu2n60c fqu2n60ctu.pdf Size:762K _fairchild_semi

3.1. fqd2n60tf fqd2n60tm fqu2n60tu.pdf Size:560K _fairchild_semi

5.1. fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf Size:731K _fairchild_semi

January 2009
QFET
FQD2N100/FQU2N100
1000V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.6A, 1000V, RDS(on) = 9Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5 pF)
This advanced technology has been especially t

5.2. fqu2n50btu.pdf Size:598K _fairchild_semi

May 2000
TM
QFET
QFET
QFET
QFET
FQD2N50B / FQU2N50B
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 4.0 pF)
This advanced technology

5.3. fqu2n90.pdf Size:1291K _fairchild_semi

January 2014
FQD2N90 / FQU2N90
N-Channel QFET MOSFET
900 V, 1.7 A, 7.2 Ω
Description Features
This N-Channel enhancement mode power MOSFET is • 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary ID = 0.85 A
planar stripe and DMOS technology. This advanced
• Low Gate Charge (Typ. 12 nC)
MOSFET technology has been especiall

5.4. fqd2n90tf fqd2n90tm fqd2n90 fqu2n90 fqu2n90tu.pdf Size:841K _fairchild_semi

January 2009
QFET
FQD2N90 / FQU2N90
900V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has been especi

5.5. fqu2n50b.pdf Size:731K _fairchild_semi

November 2013
FQU2N50B
N-Channel QFET MOSFET
500 V, 1.6 A, 5.3 Ω
Description Features
This N-Channel enhancement mode power MOSFET is • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary ID = 0.8 A
planar stripe and DMOS technology. This advanced
• Low Gate Charge (Typ. 6.0 nC)
MOSFET technology has been especially tailo

5.6. fqd2n80tf fqd2n80tm fqd2n80 fqu2n80 fqu2n80 fqu2n80tu.pdf Size:724K _fairchild_semi

January 2008
QFET
FQD2N80 / FQU2N80
800V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has been especially

Другие MOSFET… FQU13N06L
, FQU13N10L
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, IRFP250
, FDMC8030
, FQU2N90TU_AM002
, FQU3N50C
, FQU4N50TU_WS
, FQU5N40
, FDMC7582
, FQU5N60C
, FDMQ8403
.

SW4N60 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SW4N60

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 198
W

Предельно допустимое напряжение сток-исток (Uds): 600
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 4
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 30
nC

Время нарастания (tr): 30
ns

Выходная емкость (Cd): 64
pf

Сопротивление сток-исток открытого транзистора (Rds): 2.2
Ohm

Тип корпуса: TO-220

SW4N60
Datasheet (PDF)

1.1. ssi4n60b ssw4n60b.pdf Size:644K _upd-mosfet

November 2001
SSW4N60B / SSI4N60B
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC)
planar, DMOS technology.
• Low Crss ( typical 14 pF)
This advanced technology has been especially tailored to

1.2. sw4n60b.pdf Size:917K _update-mosfet

SAMWIN SW4N60B
N-channel I-PAK/D-PAK/TO-220F MOSFET
TO-220F
TO-251 TO-252
BVDSS : 600V
Features
ID : 4A
■ High ruggedness
RDS(ON) : 2.5Ω
■ RDS(ON) (Max 2.5 Ω)@VGS=10V
■ Gate Charge (Typ 11nC)
1
■ Improved dv/dt Capability 1
2
2 1
3 2
■ 100% Avalanche Tested 3 2
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produce

1.3. sw4n60.pdf Size:371K _update-mosfet

SW4N60
SAMWIN
N-channel MOSFET
BVDSS : 600V
Features
TO-220F TO-220
ID : 4.0A
■ High ruggedness
RDS(ON) : 2.2ohm
■ RDS(ON) (Max 2.2 Ω)@VGS=10V
■ Gate Charge (Typ 30nC)
■ Improved dv/dt Capability
1 1
2
2 2
■ 100% Avalanche Tested
3 3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
3
This

1.4. sw4n60d.pdf Size:654K _update-mosfet

SAMWIN SW4N60D
N-channel TO-220F/I-PAKN/D-PAK MOSFET
BVDSS : 600V
Features
TO-220F TO-251N TO-252
ID : 4A
■ High ruggedness
RDS(ON) : 2.2Ω
■ RDS(ON) (Max 2.2Ω)@VGS=10V
■ Gate Charge (Typ 18nC)
■ Improved dv/dt Capability
1
2
1 1 2
2
■ 100% Avalanche Tested 2 3
3
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produc

1.5. sw4n60k.pdf Size:650K _update-mosfet

SAMWIN SW4N60K
N-channel TO-220F/I-PAK/D-PAK MOSFET
BVDSS : 600V
Features
TO-220F TO-251 TO-252
ID : 4A
■ High ruggedness
RDS(ON) : 1.15Ω
■ RDS(ON) (Max 1.15Ω)@VGS=10V
■ Gate Charge (Typ 13nC)
■ Improved dv/dt Capability
1
1 1 2
2 2
■ 100% Avalanche Tested 2
3 3
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced

1.6. sw4n60v.pdf Size:791K _update-mosfet

SW4N60V
SW4N60V
SAMWIN
N-channel MOSFET
IPAK DPAK
BVDSS : 600V
Features
ID : 4.0A
■ High ruggedness
RDS(ON) : 2.5ohm
■ RDS(ON) (Max 2.5 Ω)@VGS=10V
■ Gate Charge (Typical 27nC)
2
■ Improved dv/dt Capability
1
1
2
2
■ 100% Avalanche Tested
3
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced super-junction technology

1.7. sw4n60a.pdf Size:393K _update-mosfet

SAMWIN SW4N60A
N-channel TO-220F MOSFET
BVDSS : 600V
Features
TO-220F
ID : 4.0A
■ High ruggedness
RDS(ON) : 2.2ohm
■ RDS(ON) (Max 2.2 Ω)@VGS=10V
■ Gate Charge (Typ 22nC)
■ Improved dv/dt Capability
1
2 2
■ 100% Avalanche Tested
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN

1.8. ssi4n60b ssi4n60b ssw4n60b.pdf Size:644K _fairchild_semi

1.9. ssw4n60a.pdf Size:503K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 600 V
Avalanche Rugged Technology
RDS(on) = 2.5 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 4 A
Improved Gate Charge
Extended Safe Operating Area

Lower Leakage Current : 25 A (Max.) @ VDS = 600V
2
Lower RDS(ON) : 2.037 ? (Typ.)
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristi

Другие MOSFET… SW2N60A1
, SW2N60B
, SW2N60D
, SW2N65
, SW2N65B
, SW2N70
, SW3N10
, SW3N80C
, J112
, SW4N60A
, SW4N60B
, SW4N60D
, SW4N60K
, SW4N60V
, SW4N65B
, SW4N65D
, SW4N65K
.

FQPF10N60C Datasheet (PDF)

1.1. fqpf10n60ct fqpf10n60cydtu.pdf Size:1020K _fairchild_semi

April 2007

QFET
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features Description
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 44 nC)
DMOS technology.
• Low Crss ( typical 18 pF)
This advanced technology has been especiall

1.2. fqp10n60c fqpf10n60c.pdf Size:1122K _fairchild_semi

April 2007

1.3. fqp10n60cf fqpf10n60cf.pdf Size:933K _fairchild_semi

February 2007
TM
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Features Description
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 44 nC)
DMOS technology.
• Low Crss ( typical 18 pF)
This advanced technology has been especia

FQP5N60C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQP5N60C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 100
W

Предельно допустимое напряжение сток-исток (Uds): 600
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 4.5
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 15
nC

Сопротивление сток-исток открытого транзистора (Rds): 2.5
Ohm

Тип корпуса: TO220

FQP5N60C
Datasheet (PDF)

1.1. fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf Size:858K _fairchild_semi

TM
QFET
FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.5 pF)
This advanced technology has been especially tailored t

5.1. fqp5n80.pdf Size:659K _fairchild_semi

September 2000
TM
QFET
FQP5N80
800V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 11 pF)
This advanced technology has been especially tailor

5.2. fqp5n20l.pdf Size:606K _fairchild_semi

August 2001
TM
QFET
FQP5N20L
200V LOGIC N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology has been especially

5.3. fqp5n30.pdf Size:744K _fairchild_semi

May 2000
TM
QFET
QFET
QFET
QFET

300V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 9.5 pF)
This advanced technology has been es

5.4. fqp5n40.pdf Size:690K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.0 pF)
This advanced technology has been

5.5. fqp5n20.pdf Size:677K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

200V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology has been

5.6. fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf Size:879K _fairchild_semi

TM
QFET
FQP5N50C/FQPF5N50C
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC)
planar stripe, DMOS technology.
• Low Crss ( typical 15pF)
This advanced technology has been especially tailored to

5.7. fqp5n90.pdf Size:678K _fairchild_semi

September 2000
TM
QFET
QFET
QFET
QFET
FQP5N90
900V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 13 pF)
This advanced technology has be

Другие MOSFET… FQP47P06
, FQP4N80
, IRFU220B
, FQP4N90C
, FQP4P40
, FQP50N06L
, FQP55N10
, FQP6N60C
, APT50M38JLL
, FQPF5N50C
, FQP65N06
, FQP6N40C
, FQU2N90
, FQP6N40CF
, FQU2N50B
, FQP6N80C
, FQD4P25TM_WS
.

SW4N60 Datasheet (PDF)

1.1. ssi4n60b ssw4n60b.pdf Size:644K _upd-mosfet

1.2. sw4n60b.pdf Size:917K _update-mosfet

1.3. sw4n60.pdf Size:371K _update-mosfet

1.4. sw4n60d.pdf Size:654K _update-mosfet

1.5. sw4n60k.pdf Size:650K _update-mosfet

1.6. sw4n60v.pdf Size:791K _update-mosfet

1.7. sw4n60a.pdf Size:393K _update-mosfet

1.8. ssi4n60b ssi4n60b ssw4n60b.pdf Size:644K _fairchild_semi

1.9. ssw4n60a.pdf Size:503K _samsung

Lower Leakage Current : 25 A (Max.) @ VDS = 600V
2
Lower RDS(ON) : 2.037 ? (Typ.)
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristi

SSS4N60AS Datasheet (PDF)

1.1. sss4n60as.pdf Size:501K _samsung

Lower Leakage Current : 25 A (Max.) @ VDS = 600V
Lower RDS(ON) : 2.037 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Unit

3.1. ssp4n60b sss4n60b.pdf Size:888K _upd-mosfet

3.2. ssp4n60b sss4n60b.pdf Size:888K _fairchild_semi

3.3. irfs8xx irfs9xxx sss4n60 sss6n60.pdf Size:26K _samsung

CM4N60C Datasheet (PDF)

1.1. cm4n60c.pdf Size:144K _jdsemi

1.2. cm4n60c to251.pdf Size:144K _jdsemi

4.1. cm4n60.pdf Size:145K _jdsemi

4.2. cm4n60f.pdf Size:128K _jdsemi

FQU1N60C Datasheet (PDF)

1.1. fqd1n60ctf fqd1n60ctm fqd1n60c fqu1n60c fqu1n60ctu.pdf Size:752K _fairchild_semi

January 2009
QFET
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8nC)
planar stripe, DMOS technology.
• Low Crss ( typical 3.5 pF)
This advanced technology has been especiall

3.1. fqd1n60 fqu1n60.pdf Size:543K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD1N60 / FQU1N60
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 3.0 pF)
This advanced technology

3.2. fqd1n60tf fqd1n60tm fqu1n60tu.pdf Size:541K _fairchild_semi