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GBU601 thru GBU607
Taiwan Semiconductor
CREAT BY ART
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
— Ideal for printed circuit board
— High case dielectric strength of 1500 VRMS
— High surge current capability
— Typical IR less than 0.1μA
— UL Recognized File # E-326243
— Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
— Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: GBU
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix «G» on packing code — halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Polarity: As marked
Weight: 4 g (approximately)
GBU
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
GBU GBU GBU GBU GBU GBU
SYMBOL
601 602 603 604 605 606
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600 800
Maximum RMS voltage
VRMS
35 70 140 280 420 560
Maximum DC blocking voltage
VDC 50 100 200 400 600 800
Maximum average forward rectified current
IF(AV)
6
Peak forward surge current,
8.3 ms single half sine-wave
IFSM
175
Rating of fusing ( t<8.3ms)
I2t 127
Maximum Instantaneous Forward Voltage (Note 1)
IF= 3 A
IF= 6 A
VF
1.0
1.1
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
5
500
Typical junction capacitance per leg (Note 2)
Cj
211
94
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
RθjC
RθjA
TJ
TSTG
2
21
— 55 to +150
— 55 to +150
Note 2: Measured at 1MHz and applied Reverse bias of 4.0V DC
GBU
607
1000
700
1000
UNIT
V
V
V
A
A
A2s
V
μA
pF
OC/W
OC
OC
Document Number: DS_D1311028
Version: H13
GBU601 thru GBU607
Taiwan Semiconductor
ORDERING INFORMATION
PART NO. PACKING CODE GREEN COMPOUND PACKAGE
GBU60x
(Note 1)
C2
CODE
Suffix «G»
GBU
Note 1: «x» defines voltage from 50V (GBU601) to 1000V (GBU607)
PACKING
25 / Tube
EXAMPLE
PREFERRED P/N
GBU606 C2
GBU606 C2G
PART NO.
GBU606
GBU606
PACKING CODE
C2
C2
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
10
8
6
4
RESISTER OR
2 INDUCTIVE LOAD
WITH HEATSINK
0 25 50 75
100 125 150
CASE TEMPERATURE (oC)
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
8.3ms Single Half Sine Wave
150 (JEDEC Method)
125
100
75
50
25
1
10
NUMBER OF CYCLES AT 60 Hz
100
1000
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
100
TJ=125℃
10
1 TJ=25℃
0.1
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
10
1
0.1
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FORWARD VOLTAGE (V)
Document Number: DS_D1311028
Version: H13
1000
FIG. 5 TYPICAL JUNCTION CAPACITANCE
GBU601-
GBU604
100
GBU605-
GBU607
f=1.0MHz
Vsig=50mVp-p
10
0.1
1 10
REVERSE VOLTAGE (V)
100
PACKAGE OUTLINE DIMENSIONS
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
GBU601 thru GBU607
Taiwan Semiconductor
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Unit (mm)
Min Max
21.80 22.30
3.50 4.10
7.40 7.90
1.65 2.16
2.16 2.54
1.65 2.03
1.52 2.03
1.02 1.27
4.83 5.33
3.30 3.56
18.30 18.80
17.50 18.00
1.90 2.16
0.46 0.56
Unit (inch)
Min Max
0.858 0.878
0.138 0.161
0.291 0.311
0.065 0.085
0.085 0.100
0.065 0.080
0.060 0.080
0.040 0.050
0.190 0.210
0.130 0.140
0.720 0.740
0.689 0.709
0.075 0.085
0.018 0.022
Document Number: DS_D1311028
Version: H13
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