Диод с барьером шоттки. его характеристики и как проверить
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TIP34C Datasheet (PDF)
1.1. tip34c.pdf Size:312K _kec
SEMICONDUCTOR TIP34C
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
FEATURES
Complementary to TIP33C.
Recommended for 45W 50W Audio Frequency
DIM MILLIMETERS
A 15.9 MAX
Amplifier Output Stage.
B 4.8 MAX
_
C 20.0 + 0.3
_
D 2.0 + 0.3
D
d 1.0+0.3/-0.25
E 2.0
F 1.0
G 3.3 MAX
d
MAXIMUM RATING (Ta=25 )
H 9.0
I 4.5
CHARACTERISTIC SY
1.2. tip34 tip34a tip34b tip34c.pdf Size:120K _inchange_semiconductor
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors TIP34/34A/34B/34C
DESCRIPTION
·With TO-3PN package
·Complement to type TIP33/33A/33B/33C
·DC current gain hFE=40(Min)@IC=1.0A
APPLICATIONS
·Designed for use in general purpose
power amplifier and switching applications.
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
5.1. tip34-a-b-c.pdf Size:85K _bourns
TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
● Designed for Complementary Use with the
SOT-93 PACKAGE
TIP33 Series (TOP VIEW)
● 80 W at 25°C Case Temperature
B
1
● 10 A Continuous Collector Current
C 2
● 15 A Peak Collector Current
● Customer-Specified Selections Available
3
E
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maxi
5.2. tip33 tip34.pdf Size:144K _mospec
A
A
A
5.3. tip33p tip34.pdf Size:332K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH POWER TRANSISTORS TIP33, A, B, C NPN
TIP34, A, B, C PNP
TO- 3PN Non Isolated
Plastic Package
For General Purpose Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS
TIP33 TIP33A TIP33B TIP33C
DESCRIPTION SYMBOL UNIT
TIP34 TIP34A TIP34B TIP34C
Collector Emitter Voltage V
5.4. tip33 tip34f.pdf Size:281K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CF
TIP 34F,34AF, 34BF, 34CF
TO -3P
Plastic Package
B
C
E
Complementary TIP34F, 34AF, 34BF, 34CF
General Purpose Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise )
DESCRIPTION SYMBOL 33F 33AF 33
CTB34M Datasheet Download — Sanken Electric
Номер произв | CTB34M | ||
Описание | (CTB-24 / CTB-34) Schottky Barrier Diodes | ||
Производители | Sanken Electric | ||
логотип | |||
1Page
Schottky Barrier Diodes (Center-tap) 40V Parameter VRM (V) IF (AV) (A) With IFSM (A) (°C) Tstg (°C) VF (V) IF (A) Electrical Characteristics (Ta =25°C) IR (mA) IR (H) (mA) trr (ns) VR =VRM VR=VRM, Ta=100°C max per element max per element IFIRP (mA) (°C/ W) (g) Fig. 3.0 2.6 A 1.5 6.1 B CTB-24 Tc —IF(AV) Derating 5 3 t/T= 1/2 t /T= 1/ 3 80 90 100 110 120 Case Temperature Tc (°C) 130 Tc —IF(AV) Derating 10 8 Sinewave t /T= 1/ 3 80 90 100 110 120 130 Case Temperature Tc (°C) CTB-34 Tc —IF(AV) Derating 15 12 Sinewave t /T= 1/ 3 80 90 100 110 120 130 Case Temperature Tc (°C) VF—IF Characteristics (Typical) 30 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage VF (V) VR—IR Characteristics (Typical) 100 10 20 30 40 50 60 Reverse Voltage VR (V) IFMS Rating 60 50 20ms 40 1 5 10 Overcurrent Cycles VF—IF Characteristics (Typical) 30 Tj = 125ºC (typ) Forward Voltage VF (V) 1.0 VR—IR Characteristics (Typical) 100 Tj =100ºC (typ) Reverse Voltage VR (V) 40 IFMS Rating 60 50 20ms 40 1 5 10 VF—IF Characteristics (Typical) 50 1 Tj = 25ºC (max) 0.1 0.2 0.4 0.6 0.8 Forward Voltage VF (V) 1.0 VR—IR Characteristics (Typical) 100 10 20 Reverse Voltage VR (V) 30 IFMS Rating 150 1 Fig. A 10.2±0.2 4.8 ±0.2 2.0 ±0.1 3.75±0.2 1.35 0.65+–00..12 2.5 2.5 Fig. B 15.6±0.4 9.6 4.8 ±0.2 2.0 ±0.1 13.6 3.2±0.1 5.45 1.05+–00..12 5.45
CTB-34M Tc —IF(AV) Derating 30 24 Sinewave 18 40 60 80 100 120 140 Case Temperature Tc (°C) VF—IF Characteristics (Typical) 100 1 Tjj =125ºC Tjj = 25ºC 0.1 0.2 0.4 0.6 0.8 Forward Voltage VF (V) 1.0 VR—IR Characteristics (Typical) 100 1 Tj =25ºC 0.1 10 20 30 Reverse Voltage VR (V) 40 IFMS Rating 300 1 |
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CTB-34 Datasheet Download — Sanken electric
Номер произв | CTB-34 | ||
Описание | Schottky Barrier Diodes (Center-tap) 40V | ||
Производители | Sanken electric | ||
логотип | |||
1Page
Schottky Barrier Diodes (Center-tap) 40V Parameter VRM (V) IF (AV) (A) With IFSM (A) (°C) Tstg (°C) VF (V) IF (A) Electrical Characteristics (Ta =25°C) IR (mA) IR (H) (mA) trr (ns) VR =VRM VR=VRM, Ta=100°C max per element max per element IFIRP (mA) (°C/ W) (g) Fig. 3.0 2.6 A 1.5 6.1 B CTB-24 Tc —IF(AV) Derating 5 4 D.C. 3 t/T= 1/2 t /T= 1/ 3 80 90 100 110 120 Case Temperature Tc (°C) 130 Tc —IF(AV) Derating 10 8 Sinewave t /T= 1/ 3 80 90 100 110 120 130 Case Temperature Tc (°C) CTB-34 Tc —IF(AV) Derating 15 12 Sinewave t /T= 1/ 3 80 90 100 110 120 130 Case Temperature Tc (°C) VF—IF Characteristics (Typical) 30 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage VF (V) VR—IR Characteristics (Typical) 100 10 20 30 40 50 60 Reverse Voltage VR (V) IFMS Rating 60 50 20ms 40 1 5 10 Overcurrent Cycles VF—IF Characteristics (Typical) 30 Tj = 125ºC (typ) Forward Voltage VF (V) 1.0 VR—IR Characteristics (Typical) 100 Tj =100ºC (typ) Reverse Voltage VR (V) 40 IFMS Rating 60 50 20ms 40 1 5 10 VF—IF Characteristics (Typical) 50 1 Tj = 25ºC (max) 0.1 0.2 0.4 0.6 0.8 Forward Voltage VF (V) 1.0 VR—IR Characteristics (Typical) 100 10 20 Reverse Voltage VR (V) 30 IFMS Rating 150 1 Fig. A 10.2±0.2 4.8 ±0.2 2.0 ±0.1 3.75±0.2 1.35 0.65+–00..12 2.5 2.5 Fig. B 15.6±0.4 9.6 4.8 ±0.2 2.0 ±0.1 13.6 3.2±0.1 5.45 1.05+–00..12 5.45
CTB-34M Tc —IF(AV) Derating 30 24 Sinewave 18 40 60 80 100 120 140 Case Temperature Tc (°C) VF—IF Characteristics (Typical) 100 1 Tjj =125ºC Tjj = 25ºC 0.1 0.2 0.4 0.6 0.8 Forward Voltage VF (V) 1.0 VR—IR Characteristics (Typical) 100 1 Tj =25ºC 0.1 10 20 30 Reverse Voltage VR (V) 40 IFMS Rating 300 1 |
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Всего страниц | 2 Pages | ||
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