Диод с барьером шоттки. его характеристики и как проверить

TIP34C Datasheet (PDF)

1.1. tip34c.pdf Size:312K _kec

SEMICONDUCTOR TIP34C
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
FEATURES
Complementary to TIP33C.
Recommended for 45W 50W Audio Frequency
DIM MILLIMETERS
A 15.9 MAX
Amplifier Output Stage.
B 4.8 MAX
_
C 20.0 + 0.3
_
D 2.0 + 0.3
D
d 1.0+0.3/-0.25
E 2.0
F 1.0
G 3.3 MAX
d
MAXIMUM RATING (Ta=25 )
H 9.0
I 4.5
CHARACTERISTIC SY

1.2. tip34 tip34a tip34b tip34c.pdf Size:120K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon PNP Power Transistors TIP34/34A/34B/34C
DESCRIPTION
·With TO-3PN package
·Complement to type TIP33/33A/33B/33C
·DC current gain hFE=40(Min)@IC=1.0A
APPLICATIONS
·Designed for use in general purpose
power amplifier and switching applications.
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base

 5.1. tip34-a-b-c.pdf Size:85K _bourns

TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
SOT-93 PACKAGE
TIP33 Series (TOP VIEW)
● 80 W at 25°C Case Temperature
B
1
● 10 A Continuous Collector Current
C 2
● 15 A Peak Collector Current
● Customer-Specified Selections Available
3
E
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maxi

5.2. tip33 tip34.pdf Size:144K _mospec

A
A
A

 5.3. tip33p tip34.pdf Size:332K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH POWER TRANSISTORS TIP33, A, B, C NPN
TIP34, A, B, C PNP
TO- 3PN Non Isolated
Plastic Package
For General Purpose Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS
TIP33 TIP33A TIP33B TIP33C
DESCRIPTION SYMBOL UNIT
TIP34 TIP34A TIP34B TIP34C
Collector Emitter Voltage V

5.4. tip33 tip34f.pdf Size:281K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CF
TIP 34F,34AF, 34BF, 34CF
TO -3P
Plastic Package
B
C
E
Complementary TIP34F, 34AF, 34BF, 34CF
General Purpose Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise )
DESCRIPTION SYMBOL 33F 33AF 33

CTB34M Datasheet Download — Sanken Electric

Номер произв CTB34M
Описание (CTB-24 / CTB-34) Schottky Barrier Diodes
Производители Sanken Electric
логотип  
1Page

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Schottky Barrier Diodes (Center-tap) 40V

Parameter
Type No.

VRM

(V)
CTB-24
CTB-24L
CTB-34
CTB-34M
40
Absolute Maximum Ratings

IF (AV) (A)

With
Heatsink

IFSM

(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj

(°C)

Tstg

(°C)

VF

(V)
max per
element

IF

(A)

Electrical Characteristics (Ta =25°C)

IR

(mA)

IR (H)

(mA)

trr

(ns)

VR =VRM VR=VRM, Ta=100°C

max per element max per element

IFIRP

(mA)
4.0
10.0
15.0
2.0
60 5.0
5.0
–40 to +150 0.55
150 10.0 10.0
50 200
35 100/100
65 100
30.0 300
15.0 20.0
100
500/500
Others
Rth ( j-c) Mass

(°C/ W) (g)

Fig.

3.0 2.6 A

1.5 6.1 B

CTB-24

Tc —IF(AV) Derating

5
www.DataSheet4U.com
4
Sinewave
D.C.

3 t/T= 1/2

t /T= 1/ 3
2
t
T
1
t /T= 1/6

80 90 100 110 120

Case Temperature Tc (°C)

130
CTB-24L

Tc —IF(AV) Derating

10
t/T= 1/2

8 Sinewave

t /T= 1/ 3
D.C.
6
t /T= 1/6
4
t
T
2

80 90 100 110 120 130

Case Temperature Tc (°C)

CTB-34

Tc —IF(AV) Derating

15
t/T= 1/2

12 Sinewave

t /T= 1/ 3
9
t /T= 1/6
6
t
T
3
D.C.

80 90 100 110 120 130

Case Temperature Tc (°C)

VF—IF Characteristics (Typical)

30
10
1
Tj =125ºC
25ºC
0.1

0.2 0.4 0.6 0.8 1.0 1.2

Forward Voltage VF (V)

VR—IR Characteristics (Typical)

100
10
CTB-23
CTB-24
1
CTB-23
CTB-24
0.1

10 20 30 40 50 60

Reverse Voltage VR (V)

IFMS Rating

60

50 20ms

40
30
20
10

1 5 10

Overcurrent Cycles
50

VF—IF Characteristics (Typical)

30
10
1
0.1

Tj = 125ºC (typ)
Tj = 125ºC (max)
Tj = 25ºC (typ)
Tj = 25ºC (max)
0.2 0.4 0.6 0.8

Forward Voltage VF (V)

1.0

VR—IR Characteristics (Typical)

100
Tj =125ºC (max)
Tj =125ºC (typ)
10
1
0.1

Tj =100ºC (typ)
Tj =25ºC (typ)
10 20 30

Reverse Voltage VR (V)

40

IFMS Rating

60

50 20ms

40
30
20
10

1 5 10
Overcurrent Cycles
50

VF—IF Characteristics (Typical)

50
10
Tj =125ºC (typ)
Tj =125ºC (max)
Tj = 25ºC (typ)

1 Tj = 25ºC (max)

0.1

0.2 0.4 0.6 0.8

Forward Voltage VF (V)

1.0

VR—IR Characteristics (Typical)

100
Tj =125ºC (max)
Tj =125ºC (typ)
10
Tj =100ºC (typ)
1
Tj =25ºC (typ)
0.1

10 20

Reverse Voltage VR (V)

30

IFMS Rating

150
120
20ms
90
60
30

1
5 10
50
Overcurrent Cycles
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent

Fig. A

10.2±0.2

4.8 ±0.2

2.0 ±0.1

3.75±0.2

1.35

0.65+–00..12

2.5 2.5
1.4

Fig. B

15.6±0.4

9.6

4.8 ±0.2

2.0 ±0.1

13.6

3.2±0.1

5.45
2
3

1.05+–00..12

5.45
0.65
+0.2
–0.1
1.4
96

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CTB-34M

Tc —IF(AV) Derating

30
t/T= 1/2

24 Sinewave

18
12
t
T
6
t /T= 1/ 3
t /T= 1/6
D.C.

40 60 80 100 120 140

Case Temperature Tc (°C)

VF—IF Characteristics (Typical)

100
10

1 Tjj =125ºC

Tjj = 25ºC

0.1

0.2 0.4 0.6 0.8

Forward Voltage VF (V)

1.0

VR—IR Characteristics (Typical)

100
Tj =125ºC
10

1 Tj =25ºC

0.1

10 20 30

Reverse Voltage VR (V)

40

IFMS Rating

300
240
20ms
180
120
60

1
5 10
50
Overcurrent Cycles
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CTB-34 Datasheet Download — Sanken electric

Номер произв CTB-34
Описание Schottky Barrier Diodes (Center-tap) 40V
Производители Sanken electric
логотип  
1Page

No Preview Available !

Schottky Barrier Diodes (Center-tap) 40V

Parameter
Type No.

VRM

(V)
CTB-24
CTB-24L
CTB-34
CTB-34M
40
Absolute Maximum Ratings

IF (AV) (A)

With
Heatsink

IFSM

(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj

(°C)

Tstg

(°C)

VF

(V)
max per
element

IF

(A)

Electrical Characteristics (Ta =25°C)

IR

(mA)

IR (H)

(mA)

trr

(ns)

VR =VRM VR=VRM, Ta=100°C

max per element max per element

IFIRP

(mA)
4.0
10.0
15.0
2.0
60 5.0
5.0
–40 to +150 0.55
150 10.0 10.0
50 200
35 100/100
65 100
30.0 300
15.0 20.0
100
500/500
Others
Rth ( j-c) Mass

(°C/ W) (g)

Fig.

3.0 2.6 A

1.5 6.1 B

CTB-24

Tc —IF(AV) Derating

5
Sinewave

4 D.C.

3 t/T= 1/2

t /T= 1/ 3
2
t
T
1
t /T= 1/6

80 90 100 110 120

Case Temperature Tc (°C)

130
CTB-24L

Tc —IF(AV) Derating

10
t/T= 1/2

8 Sinewave

t /T= 1/ 3
D.C.
6
t /T= 1/6
4
t
T
2

80 90 100 110 120 130

Case Temperature Tc (°C)

CTB-34

Tc —IF(AV) Derating

15
t/T= 1/2

12 Sinewave

t /T= 1/ 3
9
t /T= 1/6
6
t
T
3
D.C.

80 90 100 110 120 130

Case Temperature Tc (°C)

VF—IF Characteristics (Typical)

30
10
1
Tj =125ºC
25ºC
0.1

0.2 0.4 0.6 0.8 1.0 1.2

Forward Voltage VF (V)

VR—IR Characteristics (Typical)

100
10
CTB-23
CTB-24
1
CTB-23
CTB-24
0.1

10 20 30 40 50 60

Reverse Voltage VR (V)

IFMS Rating

60

50 20ms

40
30
20
10

1 5 10

Overcurrent Cycles
50

VF—IF Characteristics (Typical)

30
10
1
0.1

Tj = 125ºC (typ)
Tj = 125ºC (max)
Tj = 25ºC (typ)
Tj = 25ºC (max)
0.2 0.4 0.6 0.8

Forward Voltage VF (V)

1.0

VR—IR Characteristics (Typical)

100
Tj =125ºC (max)
Tj =125ºC (typ)
10
1
0.1

Tj =100ºC (typ)
Tj =25ºC (typ)
10 20 30

Reverse Voltage VR (V)

40

IFMS Rating

60

50 20ms

40
30
20
10

1 5 10
Overcurrent Cycles
50

VF—IF Characteristics (Typical)

50
10
Tj =125ºC (typ)
Tj =125ºC (max)
Tj = 25ºC (typ)

1 Tj = 25ºC (max)

0.1

0.2 0.4 0.6 0.8

Forward Voltage VF (V)

1.0

VR—IR Characteristics (Typical)

100
Tj =125ºC (max)
Tj =125ºC (typ)
10
Tj =100ºC (typ)
1
Tj =25ºC (typ)
0.1

10 20

Reverse Voltage VR (V)

30

IFMS Rating

150
120
20ms
90
60
30

1
5 10
50
Overcurrent Cycles
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent

Fig. A

10.2±0.2

4.8 ±0.2

2.0 ±0.1

3.75±0.2

1.35

0.65+–00..12

2.5 2.5
1.4

Fig. B

15.6±0.4

9.6

4.8 ±0.2

2.0 ±0.1

13.6

3.2±0.1

5.45
2
3

1.05+–00..12

5.45
0.65
+0.2
–0.1
1.4
96

No Preview Available !

CTB-34M

Tc —IF(AV) Derating

30
t/T= 1/2

24 Sinewave

18
12
t
T
6
t /T= 1/ 3
t /T= 1/6
D.C.

40 60 80 100 120 140

Case Temperature Tc (°C)

VF—IF Characteristics (Typical)

100
10

1 Tjj =125ºC

Tjj = 25ºC

0.1

0.2 0.4 0.6 0.8

Forward Voltage VF (V)

1.0

VR—IR Characteristics (Typical)

100
Tj =125ºC
10

1 Tj =25ºC

0.1

10 20 30

Reverse Voltage VR (V)

40

IFMS Rating

300
240
20ms
180
120
60

1
5 10
50
Overcurrent Cycles
97

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