Международный код +7733. внутренний код 8733

Биполярный транзистор KTA733B — описание производителя. Основные параметры. Даташиты.

Наименование производителя: KTA733B

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 4
pf

Статический коэффициент передачи тока (hfe): 70

Корпус транзистора: TO92

KTA733B
Datasheet (PDF)

1.1. kta733b.pdf Size:270K _kec

SEMICONDUCTOR KTA733B
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
N DIM MILLIMETERS
Low Noise : NF=1dB(Typ.). at f=1kHz
A 4.70 MAX
E
K
B 4.80 MAX
Complementary to KTC945B. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RATING (Ta

4.1. kta733.pdf Size:43K _kec

SEMICONDUCTOR KTA733
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
N DIM MILLIMETERS
Low Noise : NF=1dB(Typ.). at f=1kHz
A 4.70 MAX
E
K
B 4.80 MAX
Complementary to KTC945. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RATING (Ta=2

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SA733 Datasheet (PDF)

1.1. 2sa733k-p-q-r.pdf Size:258K _update

2SA733(3CG733) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大推动级/Purpose: Driver stage of AF power amplifier.
特点:h 高、特性好/Features: High h and excellent h linearity.
FE
FE FE
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -60 V
CBO
V -50 V
CEO
V -5.0 V
EBO
I -150 mA

1.2. 2sa733lt1.pdf Size:706K _update

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

 1.3. 2sa733.pdf Size:123K _fairchild_semi

September 2009
2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Volta

1.4. 2sa733.pdf Size:69K _nec

 1.5. 2sa733.pdf Size:218K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SA733 PNP SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
? DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
? FEATURES
* Collector-emitter voltage:
BVCEO=-50V
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package

1.6. 2sa733.pdf Size:414K _secos

2SA733
-60 V, -150mA
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary of the 2SC945
A
Collector to base voltage: -60V
L
3
3
MARKING
Top View C B
1
1 2
Product Marking Code
2
K E
2SA733 CS
D
H J
F G
CLASSIFICATION OF hFE
Product-Rank 2SA733-L

1.7. 2sa733m.pdf Size:506K _blue-rocket-elect

2SA733M(BR3CG733M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
h 高、特性好。
FE
High hFE and excellent hFE linearity.
用途 / Applications
用于音频功率放大推动级。
Driver stage of AF power amplifier.
内部等效电路 / Equivalent Circ

1.8. 2sa733lt1.pdf Size:706K _china

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

1.9. 2sa733.pdf Size:1105K _kexin

SMD Type Trans s o s
SMD Type Transiisttorrs
PNP Transistors
2SA733
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector-Base Voltage: VCBO=-60V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector to base voltage VCBO -60 V
Collector to emitter voltage VCEO -50 V

2SA733 Datasheet (PDF)

1.1. 2sa733k-p-q-r.pdf Size:258K _update

2SA733(3CG733) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大推动级/Purpose: Driver stage of AF power amplifier.
特点:h 高、特性好/Features: High h and excellent h linearity.
FE
FE FE
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -60 V
CBO
V -50 V
CEO
V -5.0 V
EBO
I -150 mA

1.2. 2sa733lt1.pdf Size:706K _update

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

 1.3. 2sa733.pdf Size:123K _fairchild_semi

September 2009
2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Volta

1.4. 2sa733.pdf Size:69K _nec

 1.5. 2sa733.pdf Size:218K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SA733 PNP SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
? DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
? FEATURES
* Collector-emitter voltage:
BVCEO=-50V
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package

1.6. 2sa733.pdf Size:414K _secos

2SA733
-60 V, -150mA
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary of the 2SC945
A
Collector to base voltage: -60V
L
3
3
MARKING
Top View C B
1
1 2
Product Marking Code
2
K E
2SA733 CS
D
H J
F G
CLASSIFICATION OF hFE
Product-Rank 2SA733-L

1.7. 2sa733m.pdf Size:506K _blue-rocket-elect

2SA733M(BR3CG733M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
h 高、特性好。
FE
High hFE and excellent hFE linearity.
用途 / Applications
用于音频功率放大推动级。
Driver stage of AF power amplifier.
内部等效电路 / Equivalent Circ

1.8. 2sa733lt1.pdf Size:706K _china

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

1.9. 2sa733.pdf Size:1105K _kexin

SMD Type Trans s o s
SMD Type Transiisttorrs
PNP Transistors
2SA733
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector-Base Voltage: VCBO=-60V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector to base voltage VCBO -60 V
Collector to emitter voltage VCEO -50 V

NTMFS4119N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NTMFS4119N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 6.1
W

Предельно допустимое напряжение сток-исток (Uds): 30
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 30
A

Сопротивление сток-исток открытого транзистора (Rds): 0.0023
Ohm

Тип корпуса: SO8FL, DFN5

NTMFS4119N
Datasheet (PDF)

1.1. ntmfs4119nt1g.pdf Size:124K _update-mosfet

NTMFS4119N
Power MOSFET
30 V, 30 A, Single N-Channel,
SO-8 Flat Lead
Features
• Low RDS(on)
http://onsemi.com
• Fast Switching Times
• Low Inductance SO-8 Package
ID Max
V(BR)DSS RDS(on) Typ
(Note 1)
• These are Pb-Free Devices
2.3 mW @ 10 V
Applications
30 V 30 A
3.1 mW @ 4.5 V
• Notebooks, Graphics Cards
• Low Side Switch
• DC-DC D
MAXIMUM RATINGS (TJ = 25°C

1.2. ntmfs4119n.pdf Size:82K _onsemi

NTMFS4119N
Power MOSFET
30 V, 30 A, Single N-Channel,
SO-8 Flat Lead
Features
Low RDS(on)
http://onsemi.com
Fast Switching Times
Low Inductance SO-8 Package
ID Max
V(BR)DSS RDS(on) Typ
(Note 1)
These are Pb-Free Devices
2.3 mW @ 10 V
Applications
30 V 30 A
3.1 mW @ 4.5 V
Notebooks, Graphics Cards
Low Side Switch
DC-DC D
MAXIMUM RATINGS (TJ = 25C unless otherwise

 3.1. ntmfs4120nt1g.pdf Size:136K _update-mosfet

NTMFS4120N
Power MOSFET
30 V, 31 A, Single N-Channel,
SO-8 Flat Lead
Features
• Low RDS(on)
http://onsemi.com
• Optimized Gate Charge
• Low Inductance SO-8 Package
ID Max
V(BR)DSS RDS(on) Typ
• These are Pb-Free Devices
(Note 1)
Applications
3.5 mW @ 10 V
30 V 31 A
• Notebooks, Graphics Cards
4.2 mW @ 4.5 V
• DC-DC Converters
• Synchronous Rectification
D
MAXI

3.2. ntmfs4121nt1g.pdf Size:132K _update-mosfet

NTMFS4121N
Power MOSFET
30 V, 29 A, Single N-Channel,
SO-8 Flat Lead
Features
• Low RDS(on)
http://onsemi.com
• Optimized Gate Charge
• Low Inductance SO-8 Package
ID Max
V(BR)DSS RDS(on) Typ
(Note 1)
• These are Pb-Free Devices
4.0 mW @ 10 V
Applications
30 V 29 A
5.5 mW @ 4.5 V
• Notebooks, Graphics Cards
• DC-DC Converters
D
• Synchronous Rectification
MAXI

 3.3. ntmfs4122nt1g.pdf Size:126K _update-mosfet

NTMFS4122N
Power MOSFET
30 V, 23 A, Single N-Channel,
SO-8 Flat Lead
Features
• Low RDS(on)
http://onsemi.com
• Low Inductance SO-8 Package
• These are Pb-Free Devices
ID MAX
V(BR)DSS RDS(on) TYP
(Note 1)
Applications
4.6 mW @ 10 V
• Notebooks, Graphics Cards
30 V 23 A
6.3 mW @ 4.5 V
• DC-DC Converters
• Synchronous Rectification
D
MAXIMUM RATINGS (TJ = 25°C unl

3.4. ntmfs4108nt1g.pdf Size:153K _update-mosfet

NTMFS4108N
Power MOSFET
30 V, 35 A, Single N-Channel,
SO-8 Flat Lead Package
http://onsemi.com
Features
• Thermally and Electrically Enhanced Packaging Compatible with
http://onsemi.com
Standard SO-8 Package Footprint
• New Package Provides Capability of Inspection and Probe After
V(BR)DSS RDS(on) TYP ID MAX
Board Mounting
1.8 mW @ 10 V
• Ultra Low RDS(on) (at 4.5 VGS), Low G

 3.5. ntmfs4120n.pdf Size:89K _onsemi

NTMFS4120N
Power MOSFET
30 V, 31 A, Single N-Channel,
SO-8 Flat Lead
Features
Low RDS(on)
http://onsemi.com
Optimized Gate Charge
Low Inductance SO-8 Package
ID Max
V(BR)DSS RDS(on) Typ
These are Pb-Free Devices
(Note 1)
Applications
3.5 mW @ 10 V
30 V 31 A
Notebooks, Graphics Cards
4.2 mW @ 4.5 V
DC-DC Converters
Synchronous Rectification
D
MAXIMUM RATINGS (TJ =

3.6. ntmfs4108n.pdf Size:90K _onsemi

NTMFS4108N
Power MOSFET
30 V, 35 A, Single N-Channel,
SO-8 Flat Lead Package
http://onsemi.com
Features
Thermally and Electrically Enhanced Packaging Compatible with
http://onsemi.com
Standard SO-8 Package Footprint
New Package Provides Capability of Inspection and Probe After
V(BR)DSS RDS(on) TYP ID MAX
Board Mounting
1.8 mW @ 10 V
Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resis

3.7. ntmfs4121n.pdf Size:89K _onsemi

NTMFS4121N
Power MOSFET
30 V, 29 A, Single N-Channel,
SO-8 Flat Lead
Features
Low RDS(on)
http://onsemi.com
Optimized Gate Charge
Low Inductance SO-8 Package
ID Max
V(BR)DSS RDS(on) Typ
These are Pb-Free Devices
(Note 1)
Applications
4.0 mW @ 10 V
30 V 29 A
Notebooks, Graphics Cards
5.5 mW @ 4.5 V
DC-DC Converters
Synchronous Rectification
D
MAXIMUM RATINGS (TJ =

3.8. ntmfs4122n.pdf Size:84K _onsemi

NTMFS4122N
Power MOSFET
30 V, 23 A, Single N-Channel,
SO-8 Flat Lead
Features
Low RDS(on)
http://onsemi.com
Low Inductance SO-8 Package
This is a Pb-Free Device
ID MAX
Applications
V(BR)DSS RDS(on) TYP
(Note 1)
Notebooks, Graphics Cards
4.6 mW @ 10 V
DC-DC Converters 30 V 23 A
6.3 mW @ 4.5 V
Synchronous Rectification
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Другие MOSFET… NTMD4840N
, NTMD4884NF
, NTMD5836NL
, NTMD5838NL
, NTMD6N02
, NTMD6N03
, NTMD6N04R2
, NTMD6P02
, IRF9640
, NTMFS4821N
, NTMFS4823N
, NTMFS4825NFE
, NTMFS4826NE
, NTMFS4833N
, NTMFS4833NS
, NTMFS4834N
, NTMFS4835N
.

KSA733L Datasheet (PDF)

4.1. ksa733.pdf Size:41K _fairchild_semi

KSA733
Low Frequency Amplifier
• Collector-Base Voltage : VCBO= -60V
• Complement to KSC945
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-E

4.2. ksa733.pdf Size:125K _samsung

Low Frequency AmpIifier
Collector-Base Voltage : VCBO= -60V
Complement to KSC945
TO-92

1. Emitter 2. Base 3. Collector
PNP EpitaxiaI SiIicon Transistor
AbsoIute Maximum Ratings Ta=25C unless otherwise noted
SymboI Parameter Ratings Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -150 mA

Биполярный транзистор 2SA733P — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SA733P

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.25
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 4.5
pf

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: TO92

2SA733P
Datasheet (PDF)

4.1. 2sa733k-p-q-r.pdf Size:258K _update

2SA733(3CG733) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大推动级/Purpose: Driver stage of AF power amplifier.
特点:h 高、特性好/Features: High h and excellent h linearity.
FE
FE FE
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -60 V
CBO
V -50 V
CEO
V -5.0 V
EBO
I -150 mA

4.2. 2sa733lt1.pdf Size:706K _update

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

 4.3. 2sa733.pdf Size:123K _fairchild_semi

September 2009
2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Volta

4.4. 2sa733.pdf Size:69K _nec

 4.5. 2sa733.pdf Size:218K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SA733 PNP SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
? DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
? FEATURES
* Collector-emitter voltage:
BVCEO=-50V
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package

4.6. 2sa733.pdf Size:414K _secos

2SA733
-60 V, -150mA
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary of the 2SC945
A
Collector to base voltage: -60V
L
3
3
MARKING
Top View C B
1
1 2
Product Marking Code
2
K E
2SA733 CS
D
H J
F G
CLASSIFICATION OF hFE
Product-Rank 2SA733-L

4.7. 2sa733m.pdf Size:506K _blue-rocket-elect

2SA733M(BR3CG733M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
h 高、特性好。
FE
High hFE and excellent hFE linearity.
用途 / Applications
用于音频功率放大推动级。
Driver stage of AF power amplifier.
内部等效电路 / Equivalent Circ

4.8. 2sa733lt1.pdf Size:706K _china

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

4.9. 2sa733.pdf Size:1105K _kexin

SMD Type Trans s o s
SMD Type Transiisttorrs
PNP Transistors
2SA733
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector-Base Voltage: VCBO=-60V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector to base voltage VCBO -60 V
Collector to emitter voltage VCEO -50 V

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

Биполярный транзистор A733LT1 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: A733LT1

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.2
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 50
MHz

Статический коэффициент передачи тока (hfe): 120

Корпус транзистора: SOT23

A733LT1
Datasheet (PDF)

1.1. 2sa733lt1.pdf Size:706K _update

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

1.2. a733lt1.pdf Size:1860K _wietron

A733LT1
COLLECTOR
General Purpose Transistor
3
PNP Silicon
1
BASE
2
SOT-23
EMITTER
(Ta=25 C)
MAXIMUM RATINGS
Rating Symbol Value
Unit
Collector-Emitter Voltage V
CEO -50 Vdc
Collector-Base Voltage VCBO
-60 Vdc
Emitter-Base Voltage VEBO
-5.0 Vdc
Collector Current -Continuous IC
mAdc
-150
THERMAL CHARACTERISTICS
Characteristics Symbol Value
Unit
(1)
Total Device Dissipatio

 1.3. 2sa733lt1.pdf Size:706K _china

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SA733LT1 Datasheet (PDF)

1.1. 2sa733lt1.pdf Size:706K _update

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

1.2. 2sa733lt1.pdf Size:706K _china

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

 4.1. 2sa733k-p-q-r.pdf Size:258K _update

2SA733(3CG733) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大推动级/Purpose: Driver stage of AF power amplifier.
特点:h 高、特性好/Features: High h and excellent h linearity.
FE
FE FE
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -60 V
CBO
V -50 V
CEO
V -5.0 V
EBO
I -150 mA

4.2. 2sa733.pdf Size:123K _fairchild_semi

September 2009
2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Volta

 4.3. 2sa733.pdf Size:69K _nec

4.4. 2sa733.pdf Size:218K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SA733 PNP SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
? DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
? FEATURES
* Collector-emitter voltage:
BVCEO=-50V
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package

 4.5. 2sa733.pdf Size:414K _secos

2SA733
-60 V, -150mA
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary of the 2SC945
A
Collector to base voltage: -60V
L
3
3
MARKING
Top View C B
1
1 2
Product Marking Code
2
K E
2SA733 CS
D
H J
F G
CLASSIFICATION OF hFE
Product-Rank 2SA733-L

4.6. 2sa733m.pdf Size:506K _blue-rocket-elect

2SA733M(BR3CG733M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
h 高、特性好。
FE
High hFE and excellent hFE linearity.
用途 / Applications
用于音频功率放大推动级。
Driver stage of AF power amplifier.
内部等效电路 / Equivalent Circ

4.7. 2sa733.pdf Size:1105K _kexin

SMD Type Trans s o s
SMD Type Transiisttorrs
PNP Transistors
2SA733
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector-Base Voltage: VCBO=-60V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector to base voltage VCBO -60 V
Collector to emitter voltage VCEO -50 V

Биполярный транзистор 2SA733LT1 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SA733LT1

Маркировка: M6

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.225
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SOT23

2SA733LT1
Datasheet (PDF)

1.1. 2sa733lt1.pdf Size:706K _update

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

1.2. 2sa733lt1.pdf Size:706K _china

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

 4.1. 2sa733k-p-q-r.pdf Size:258K _update

2SA733(3CG733) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大推动级/Purpose: Driver stage of AF power amplifier.
特点:h 高、特性好/Features: High h and excellent h linearity.
FE
FE FE
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -60 V
CBO
V -50 V
CEO
V -5.0 V
EBO
I -150 mA

4.2. 2sa733.pdf Size:123K _fairchild_semi

September 2009
2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Volta

 4.3. 2sa733.pdf Size:69K _nec

4.4. 2sa733.pdf Size:218K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SA733 PNP SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
? DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
? FEATURES
* Collector-emitter voltage:
BVCEO=-50V
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package

 4.5. 2sa733.pdf Size:414K _secos

2SA733
-60 V, -150mA
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary of the 2SC945
A
Collector to base voltage: -60V
L
3
3
MARKING
Top View C B
1
1 2
Product Marking Code
2
K E
2SA733 CS
D
H J
F G
CLASSIFICATION OF hFE
Product-Rank 2SA733-L

4.6. 2sa733m.pdf Size:506K _blue-rocket-elect

2SA733M(BR3CG733M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
h 高、特性好。
FE
High hFE and excellent hFE linearity.
用途 / Applications
用于音频功率放大推动级。
Driver stage of AF power amplifier.
内部等效电路 / Equivalent Circ

4.7. 2sa733.pdf Size:1105K _kexin

SMD Type Trans s o s
SMD Type Transiisttorrs
PNP Transistors
2SA733
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector-Base Voltage: VCBO=-60V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector to base voltage VCBO -60 V
Collector to emitter voltage VCEO -50 V

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SD733 Datasheet (PDF)

1.1. 2sd733.pdf Size:94K _no

1.2. 2sd733.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD733
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V (Min)
(BR)CEO
·High Current Capability
·Complement to Type 2SB697
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER MAX UNIT
V Co

 1.3. 2sd733 2sd733k.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD733 2SD733K
DESCRIPTION
·With TO-3 package
·Complement to type 2SB697/697K
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simpli

Биполярный транзистор 2SA733 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SA733

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.25
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.3
A

Предельная температура PN-перехода (Tj): 175
°C

Граничная частота коэффициента передачи тока (ft): 90
MHz

Ёмкость коллекторного перехода (Cc): 12
pf

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO92

2SA733
Datasheet (PDF)

1.1. 2sa733k-p-q-r.pdf Size:258K _update

2SA733(3CG733) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大推动级/Purpose: Driver stage of AF power amplifier.
特点:h 高、特性好/Features: High h and excellent h linearity.
FE
FE FE
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -60 V
CBO
V -50 V
CEO
V -5.0 V
EBO
I -150 mA

1.2. 2sa733lt1.pdf Size:706K _update

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

 1.3. 2sa733.pdf Size:123K _fairchild_semi

September 2009
2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Volta

1.4. 2sa733.pdf Size:69K _nec

 1.5. 2sa733.pdf Size:218K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SA733 PNP SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
? DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
? FEATURES
* Collector-emitter voltage:
BVCEO=-50V
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package

1.6. 2sa733.pdf Size:414K _secos

2SA733
-60 V, -150mA
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary of the 2SC945
A
Collector to base voltage: -60V
L
3
3
MARKING
Top View C B
1
1 2
Product Marking Code
2
K E
2SA733 CS
D
H J
F G
CLASSIFICATION OF hFE
Product-Rank 2SA733-L

1.7. 2sa733m.pdf Size:506K _blue-rocket-elect

2SA733M(BR3CG733M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
h 高、特性好。
FE
High hFE and excellent hFE linearity.
用途 / Applications
用于音频功率放大推动级。
Driver stage of AF power amplifier.
内部等效电路 / Equivalent Circ

1.8. 2sa733lt1.pdf Size:706K _china

 SEMICONDUCTOR 2SA733LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current : Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo -60 V
Collector-Emitter Voltage Vceo -50 V
Emitter-Base Voltage Vebo -5 V
PIN: 1 2 3
Collector Current Ic -150

1.9. 2sa733.pdf Size:1105K _kexin

SMD Type Trans s o s
SMD Type Transiisttorrs
PNP Transistors
2SA733
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector-Base Voltage: VCBO=-60V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector to base voltage VCBO -60 V
Collector to emitter voltage VCEO -50 V

Другие транзисторы… 2SA725
, 2SA726
, 2SA728
, 2SA728A
, 2SA73
, 2SA730
, 2SA731
, 2SA732
, BC237
, 2SA738
, 2SA739
, 2SA74
, 2SA740
, 2SA740A
, 2SA741
, 2SA741H
, 2SA742
.

Биполярный транзистор 2SD733 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD733

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100
W

Макcимально допустимое напряжение коллектор-база (Ucb): 160
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 12
A

Предельная температура PN-перехода (Tj): 125
°C

Граничная частота коэффициента передачи тока (ft): 7.5
MHz

Статический коэффициент передачи тока (hfe): 320

Корпус транзистора: TO3

2SD733
Datasheet (PDF)

1.1. 2sd733.pdf Size:94K _no

1.2. 2sd733.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD733
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V (Min)
(BR)CEO
·High Current Capability
·Complement to Type 2SB697
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER MAX UNIT
V Co

 1.3. 2sd733 2sd733k.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD733 2SD733K
DESCRIPTION
·With TO-3 package
·Complement to type 2SB697/697K
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simpli

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

KTA733B Datasheet (PDF)

1.1. kta733b.pdf Size:270K _kec

SEMICONDUCTOR KTA733B
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
N DIM MILLIMETERS
Low Noise : NF=1dB(Typ.). at f=1kHz
A 4.70 MAX
E
K
B 4.80 MAX
Complementary to KTC945B. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RATING (Ta

4.1. kta733.pdf Size:43K _kec

SEMICONDUCTOR KTA733
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
N DIM MILLIMETERS
Low Noise : NF=1dB(Typ.). at f=1kHz
A 4.70 MAX
E
K
B 4.80 MAX
Complementary to KTC945. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RATING (Ta=2