Транзистор d882

Содержание:

FTD882D Datasheet (PDF)
D882S Datasheet (PDF)
B882 Datasheet Download — Sanyo Semicon Device
Биполярный транзистор D882SS — описание производителя. Основные параметры. Даташиты.
D882SS Datasheet (PDF)
Результаты подбора транзистора (поиска аналога)
STD882D Datasheet (PDF)
H882 Datasheet (PDF)
D882P Datasheet (PDF)
D882H Datasheet (PDF)
HSD882S Datasheet (PDF)
D882SS Datasheet (PDF)

FTD882D Datasheet (PDF)

1.1. ftd882d.pdf Size:371K _first_silicon

SEMICONDUCTOR
FTD882D
TECHNICAL DATA
FTD882D TRANSISTOR
A
I
FEATURES
C
J
Low Speed Switching
DIM MILLIMETERS
A 6 50 ± 0 2
B 5 60 ± 0 2
C 5 20 ± 0 2
MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 ± 0 2
E 2 70 ± 0 2
F 2 30 ± 0 1
Symbol Parameter Value Unit H
H 1 00 MAX
I 2 30 ± 0 2
L
F F
VCBO Collector-Base Voltage 40 V
J 0 5 ± 0 1
L 0 50 ± 0 10
1 2 3

4.1. ftd882.pdf Size:114K _first_silicon

SEMICONDUCTOR
FTD882
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
D
E
A
FEATURES
Complementary to FTB772.
C
F G
DIM MILLIMETERS
B
A 8.3 MAX
MAXIMUM RATING (Ta=25 )
B 11.3±0.3
C 4.15 TYP
1 2 3
CHARACTERISTIC SYMBOL RATING UNIT D 3.2±0.2
E 2.0±0.2
H F 2.8±0.1
VCBO
Collector-Base Voltage 40 V I
G 3.2±0.1
H 1.27±0.1
VCEO K
Collector-Emitter V

4.2. ftd882f.pdf Size:289K _first_silicon

SEMICONDUCTOR
FTD882F
TECHNICAL DATA
A
FTD882F NPN TRANSISTOR
C
H
G
FEATURES
Power dissipation
D
D
K
F F
DIM MILLIMETERS
A 4.70 MAX
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
_
+
B 2.50 0.20
C 1.70 MAX
1 2 3
D 0.45+0.15/-0.10
Symbol Parameter Value Unit
E 4.25 MAX
_
+
F 1.50 0.10
VCBO Collector-Base Voltage 40 V
G 0.40 TYP
1. BASE
H 1.8 MAX
2. COLLE

D882S Datasheet (PDF)

C5353 транзистор характеристики

1.1. tsd882s.pdf Size:244K _update

TSD882S
Low Vcesat NPN Transistor
TO-92 SOT-89
Pin Definition:
Pin Definition: PRODUCT SUMMARY
1. Base
1. Emitter
BVCBO 60V
2. Collector
2. Collector
3. Emitter
3. Base
BVCEO 50V
IC 3A
VCE(SAT) 0.5V @ IC / IB = 2A / 200mA
Features Ordering Information
● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.)
Part No. Package Packing
● Complementary part with TSB

1.2. 2sd882s.pdf Size:141K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SD882S NPN SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772S
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SD882

1.3. d882ss.pdf Size:154K _utc

UNISONIC TECHNOLOGIES CO., LTD
D882SS NPN SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High Current Output up to 3A
* Low Saturation Voltage
* Complement to B772SS
APPLICATIONS
* Audio Power Amplifier
* DC-DC Convertor
* Voltage Regulator
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Halogen Free 1 2 3

1.4. d882s.pdf Size:209K _secos

D882S
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
? Power Dissipation
G H
J
Millimeter
REF.
A D
Min. Max.
CLASSIFICATION OF hFE
A 4.40 4.70
B
B 4.30 4.70
C 12.70 —
K
D 3.30 3.81
E 0.36 0.56
Rank R 0 Y GR
F 0.36 0.51
E C F G 1.27 TYP.
60-120 160-320 200-400

1.5. d882s.pdf Size:206K _lge

D882S
Transistor(NPN)
1.EMITTER
TO-92
2.COLLECTOR
3.BASE
Features

Power dissipation
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.

1.6. hsd882s.pdf Size:55K _hsmc

Spec. No. : HE6544
HI-SINCERITY
Issued Date : 1992.11.25
Revised Date : 2006.07.28
MICROELECTRONICS CORP.
Page No. : 1/5
HSD882S
NPN Epitaxial Planar Transistor
Description
The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay
driver.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature…………………………………

1.7. btd882sa3.pdf Size:302K _cystek

Spec. No. : C848A3-H
Issued Date : 2003.05.31
CYStech Electronics Corp.
Revised Date :2013.03.21
Page No. : 1/7
Low Vcesat NPN Epitaxial Planar Transistor
BVCEO 50V
IC 3A
BTD882SA3
RCESAT (Typ) 125mΩ
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB772SA3
• Pb-free lead plating and h

1.8. btd882st3.pdf Size:249K _cystek

Spec. No. : C858T3
Issued Date : 2011.06.28
CYStech Electronics Corp.
Revised Date :
Page No. : 1/7
Low Vcesat NPN Epitaxial Planar Transistor
BVCEO 30V
IC 3A
BTD882ST3
RCESAT(typ) 150mΩ
Features
• Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB772ST3
• Pb-free lead plating package
Symbol Outline

1.9. hd882s.pdf Size:26K _shantou-huashan

N P N S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HD882S
█ AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃
Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃
PC——Collector Dissipation⋯⋯

B882 Datasheet Download — Sanyo Semicon Device

Номер произв

B882

Описание

2SB882

Производители

Sanyo Semicon Device

логотип

1Page

Транзистор tip41c

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Ordering number:926C
PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors
2SB882/2SD1192
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers,
voltage regulator control.
Features
· High DC current gain.
· High current capacity and wide ASO.
· Low saturation voltage.
Package Dimensions
unit:mm
2010C
[2SB882/2SD1192]
( ) : 2SB882
Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg

Electrical Characteristics at Ta = 25˚C

Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)5V, IC=0
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)5A
IC=(–)5A, IB=(–)10mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)5A, IB=(–)10mA
JEDEC : TO-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
Ratings
(–)70
(–)60
(–)6
(–)10
(–)15
1.75
40
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
2000
5000
20
0.9
(–)1.0
max
(–)0.1
(–)3.0
(–)1.5
(–)2.0
Unit
mA
mA
MHz
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO) 8-4329/D251MH/4067KI/2045MW, TS No.926–1/4

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Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB882/2SD1192
Symbol
Conditions
V(BR)CBO
V(BR)CEO
ton
IC=(–)5mA, IE=0

IC=(–)50mA, RBE=∞

See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Electrical Connection
Ratings
min typ
(–)70
(–)60
(0.5)
0.6
(1.5)
3.0
(1.7)
1.8
max
Unit
V
V
µs
µs
µs
µs
µs
µs
No.926–2/4

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2SB882/2SD1192
No.926–3/4

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Биполярный транзистор D882SS — описание производителя. Основные параметры. Даташиты.

E13007 транзистор характеристики аналог

Наименование производителя: D882SS

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.35
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 80
MHz

Ёмкость коллекторного перехода (Cc): 45
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT-23

D882SS
Datasheet (PDF)

1.1. d882ss.pdf Size:154K _utc

5.1. tsd882s.pdf Size:244K _update

5.2. 2sd882s.pdf Size:141K _utc

5.3. d882s.pdf Size:209K _secos

5.4. d882s.pdf Size:206K _lge

D882S
Transistor(NPN)
1.EMITTER
TO-92
2.COLLECTOR
3.BASE
Features

5.5. hsd882s.pdf Size:55K _hsmc

5.6. btd882sa3.pdf Size:302K _cystek

5.7. btd882st3.pdf Size:249K _cystek

5.8. hd882s.pdf Size:26K _shantou-huashan

Другие транзисторы… USS4350
, USS4450
, USS5350
, UT2274
, X1049A
, 2SC2328A
, 2SD882S
, 8050S
, TIP31
, HE8051
, MMBT1815
, MMBT9013
, MMBT9014
, MMBT945
, MN2510
, 2SA928A
, 2SB772S
.

Результаты подбора транзистора (поиска аналога)

Type	Mat	Struct	Pc	Ucb	Uce	Ueb	Ic	Tj	Ft	Hfe	Caps
2DC4672	Si	NPN	0.9		50		3		180	82	SOT89
2SC5566-TD-E	Si	NPN	3.5	100	50	6	4	150	400	200	SOT89
2SC5569-TD-E	Si	NPN	3.5	100	50	6	7	150	330	200	SOT89
2SC5964-TD-E	Si	NPN	3.5	100	50	6	3	150	380	200	SOT89
2SC5964-TD-H	Si	NPN	3.5	100	50	6	3	150	380	200	SOT89
2SC6094-TD-E	Si	NPN	3.5	100	60	6.5	3	150	390	300	SOT89
2SCR533PFRA	Si	NPN	0.5	50	50	6	3	150	320	180	SOT89
2SD2098Q	Si	NPN	0.5	50	50		5	150	150	120	SOT89
2SD2098R	Si	NPN	0.5	50	50		5	150	150	180	SOT89
2SD2098S	Si	NPN	0.5	50	50		5	150	150	270	SOT89
2SD2402	Si	NPN	2	50	30	6	5	150	170	100	SOT89
2SD882A	Si	NPN	0.5	70	60	6	3	150	50	60	SOT89
2SD965A	Si	NPN	0.75	40	30	7	5	150	150	230	SOT89
2STF1360	Si	NPN	1.4	80	60	6	3	150	130	160	SOT89
BD882-GR	Si	NPN	0.5	40	30	6	3	150	50	60	SOT89
BD882-O	Si	NPN	0.5	40	30	6	3	150	50	60	SOT89
BD882-R	Si	NPN	0.5	40	30	6	3	150	50	60	SOT89
BD882-Y	Si	NPN	0.5	40	30	6	3	150	50	60	SOT89
BTC4672M3	Si	NPN	2	100	60	6	5	150	210	250	SOT89
BTD1616AM3	Si	NPN	2.1	120	60	7	3	150	100	200	SOT89
BTD2098AM3	Si	NPN	2	40	30	6	5	150	150	270	SOT89
BTD2150AM3	Si	NPN	2	80	50	6	3	150	90	120	SOT89
CHT4672XGP	Si	NPN	2	50	50	6	3	150	210	82	SOT89
CHT5824XGP	Si	NPN	2	60	60	6	3	150	200	120	SOT89
D882	Si	NPN	0.5	40	30	6	3	150	50	60	SOT89
D882H	Si	NPN	0.5	70	70	6	3	150	50	60	SOT893L
DNLS350Y	Si	NPN	1		50		3		100	300	SOT89
DSS4540X	Si	NPN	2		40		4		70	300	SOT89
DXT651	Si	NPN	1		60		3		200	100	SOT893L
FCX1051A	Si	NPN	1		40		3		155	270	SOT89
FCX1053A	Si	NPN	2		75		3		140	300	SOT89
FCX619	Si	NPN	1.5		50		3		100	300	SOT89
FJC1963	Si	NPN	0.5	50	30	6	3	150		120	SOT89
FTD1624	Si	NPN	1	60	50	6	3	150	150	100	SOT89
FTD882F	Si	NPN	0.5	40	30	6	3	150	50	60	SOT89
GSTM882	Si	NPN	0.5	40	30	6	3	150	50	60	SOT89
INC5002AP1	Si	NPN	0.5	80	60	6	3	150	200	100	SOT89
KTD1624	Si	NPN	1	60	50	6	3	150	150	100	SOT89
L2SD882P	Si	NPN	0.5	40	30	6	3	150	50	160	SOT89
L2SD882Q	Si	NPN	0.5	40	30	6	3	150	50	100	SOT89
PBSS4330X	Si	NPN	0.55	50	30	6	3	150	100	300	SOT89
PBSS4540X	Si	NPN	0.55	40	40	6	4	150	70	300	SOT89
ST2SC4541U	Si	NPN	1	80	50	6	3	150	100	120	SOT89
ST2SC4672U	Si	NPN	2	60	50	6	3	150	210	82	SOT89
STC4350F	Si	NPN	1	60	50	6	3	150	210	120	SOT89
TSD2150A	Si	NPN	0.6	80	50	6	3	150	90	200	SOT89 TO92
USS4350	Si	NPN	2	60	50	6	3	150	100	200	SOT223 SOT89
WTM1624	Si	NPN	0.5	60	50	6	3	150	150	150	SOT89
WTM882	Si	NPN	0.5	40	30	6	3	150	90	60	SOT89
ZX5T150	Si	NPN	0.5	70	60	6	3	150	50	160	SOT89
ZXTN19055DZ	Si	NPN	2.1		55		6		140	250	SOT89
ZXTN19100CZ	Si	NPN	2.4		100		5.25		150	200	SOT89
ZXTN2007Z	Si	NPN	2.1		30		6		140	100	SOT89
ZXTN2010Z	Si	NPN	2.1		60		5		130	100	SOT89
ZXTN2011Z	Si	NPN	2.1		100		4.5		130	100	SOT89
ZXTN25040DZ	Si	NPN	1.8		40		5		190	300	SOT89
ZXTN25060BZ	Si	NPN	1.8		60		5		185	90	SOT89

Всего результатов: 57

STD882D Datasheet (PDF)

1.1. std882d.pdf Size:290K _auk

STD882D
NPN Silicon Transistor
Description
PIN Connection
• Suitable for low voltage large current drivers
• Excellent hFE Linearity
• Complementary pair with STB772D
• Switching Application
Features
• Low collector saturation voltage
VCE(sat)=0.4V(Max.)
TO-252
Ordering Information
Type NO. Marking Package Code
STD882D STD882 TO-252
Absolute maximu

4.1. gstd882.pdf Size:343K _upd

GSTD882
NPN Epitaxial Planar Transistors
Product Description Features
This device is designed as a general purpose Lead(Pb)-Free
amplifier and switch.
Packages & Pin Assignments
TO-252
Pin Description
1 Base
2 Collector
3 Emitter
Marking Information
P/N Package Rank Part Marking
GSTD882F TO-252 (R) / (O) / (Y) / (GR) D882
Ordering Information
Part Number Package Qua

4.2. gstd882.pdf Size:343K _globaltech_semi

H882 Datasheet (PDF)

1.1. ch882gp.pdf Size:104K _upd

CHENMKO ENTERPRISE CO.,LTD
CH882GP
SMALL FLAT
NPN Epitaxial Transistor
VOLTAGE 30 Volts CURRENT 3 Ampere
APPLICATION
* Power driver and Dc to DC convertor .
FEATURE
* Small flat package. (DPAK)
DPAK/TO-252
* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)
* High speed switching time: tstg= 1.0uSec (typ.)
* PC= 1.5 W (mounted on ceramic substrate).
.094 (2.38)
.086 (2.19)
* H

1.2. ksh882.pdf Size:226K _upd

KSH882
KSH882
◎ SEMIHOW REV.A2,Mar 2008
KSH882
2
KSH882
Audio Frequency Power Amplifier
Audio Frequency Power Amplifier
— Low Speed Switching
— Complement to KSH772
3 Amperes
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted
1 Watts
TO-126
CHARACTERISTICS SYMBOL RATING UNIT
1. Emitter
2. Collector
3. Base
Collector-Base Voltage VCBO

1.3. h882.pdf Size:817K _shantou-huashan

NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H882
█ APPLICATIONS
Audio Frequency Power Amplifier , Switching Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-126ML
Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃
Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ 150℃
PC——Collecto

1.4. ch882gp.pdf Size:104K _chenmko

D882P Datasheet (PDF)

1.1. d882pc.pdf Size:117K _jdsemi

R
D882PC
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Charger、Emergency lamp and
Electric toy control circuit
2．
2．
2．FEATURES
2．

1.2. d882p.pdf Size:119K _jdsemi

R
D882P
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Charger、Emergency lamp and
Electric toy control circuit
2．
2．
2．FEATURES
2．

1.3. d882pc 2.pdf Size:118K _jdsemi

D882H Datasheet (PDF)

1.1. d882h.pdf Size:129K _upd

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
D882H TRANSISTOR (NPN)
SOT-89-3L
FEATURE
 Low VCE(sat)
 Large current capacity
1. BASE
2. COLLECTOR
3. EMITTER
MAKING: D882H
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 70 V
VCEO Collector-Emitter Voltage 70

1.2. st2sd882ht.pdf Size:439K _semtech

ST 2SD882HT
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R,
Q, P and E, according to its DC current gain.
E
C
B
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol Value Unit
Collector Base Voltage
VCBO 60 V
Collector Emitter Voltage
VCEO 30 V
Emitter Base Voltage
VEBO 5 V
Collector Current
IC 3 A
Collector C

HSD882S Datasheet (PDF)

1.1. hsd882s.pdf Size:55K _hsmc

4.1. hsd882.pdf Size:50K _hsmc

Spec. No. : HE6004
HI-SINCERITY
Issued Date : 1998.03.15
Revised Date : 2005.08.15
MICROELECTRONICS CORP.
Page No. : 1/5
HSD882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD882 is designed for using in output stage of 1w audio amplifier, voltage
regulator, DC-DC converter and relay driver.
TO-126ML
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
Storage Temperat