Транзистор 2n3906

PN2907A Datasheet (PDF)

1.1. pn2907a.pdf Size:61K _st

PN2907A

SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Ordering Code Marking Package / Shipment
PN2907A PN2907A TO-92 / Bulk
PN2907A-AP PN2907A TO-92 / Ammopack
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE NPN COMPLEMENTARY TYPE IS
PN2222A
TO-92 TO-92
APPLICATIONS
Bulk Ammopack
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPME

1.2. pzt2907a pn2907a mmbt2907a.pdf Size:97K _fairchild_semi

PN2907A MMBT2907A PZT2907A
C
C
E
E
C
B
C TO-92
B
SOT-23
B SOT-223
E
Mark: 2F
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO C

 1.3. pn2907a to-92.pdf Size:245K _mcc

MCC
TM Micro Commercial Components
20736 Marilla Street Chatsworth
PN2907A
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Through Hole Package
Capable of 600mWatts of Power Dissipation and 600mA Ic
PNP General
Lead Free Finish/RoHS Compliant («P» Suffix designates
Purpose Amplifier
RoHS Compliant. See ordering information)
Marking

1.4. pn2907a.pdf Size:100K _onsemi

PN2907A
Preferred Device
General Purpose Transistor
PNP Silicon
Features
These are Pb-Free Devices*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector — Emitter Voltage VCEO -60 Vdc
Collector — Base Voltage VCBO -60 Vdc
1
EMITTER
Emitter — Base Voltage VEBO -5.0 Vdc
Collector Current — Continuous IC -600 mAdc
Total Device Dissipation @ TA =

 1.5. pn2907a.pdf Size:314K _utc

UNISONIC TECHNOLOGIES CO., LTD
PN2907A PNP SILICON TRANSISTOR
PNP GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
This UTC PN2907A is designed for use as a general purpose
amplifier and switch requiring collector currents to 600 mA.
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Plating Halogen Free 1 2 3
PN2907AL-AB3-R PN2907AG-AB3-R SOT-89 B C E Tap

1.6. hpn2907a.pdf Size:51K _hsmc

Spec. No. : HE6105
HI-SINCERITY
Issued Date : 1992.09.09
Revised Date : 2004.12.15
MICROELECTRONICS CORP.
Page No. : 1/5
HPN2907A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2907A is designed for general purpose amplifier and high speed,
medium-power switching applications.
Features
TO-92
• Low Collector Saturation voltage
• High Speed Switching
• For Complementary U

2N2906 Datasheet (PDF)

1.1. 2n2906aubc.pdf Size:99K _upd

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES LEVELS
2N2906A 2N2907A JAN
2N2906AL 2N2907AL JANTX
2N2906AUA 2N2907AUA JANTXV
2N2906AUB 2N2907AUB JANS
2N2906AUBC * 2N2907AUBC *
* Available to JANS qua

1.2. 2n2906al.pdf Size:100K _upd

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES LEVELS
JANSM – 3K Rads (Si)
2N2906A 2N2907A
JANSD – 10K Rads (Si)
2N2906AL 2N2907AL
JANSP – 30K Rads (Si)
2N2906AUA 2N2907AUA
JANS

 1.3. 2n2906aua.pdf Size:100K _upd

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES LEVELS
JANSM – 3K Rads (Si)
2N2906A 2N2907A
JANSD – 10K Rads (Si)
2N2906AL 2N2907AL
JANSP – 30K Rads (Si)
2N2906AUA 2N2907AUA
JANS

1.4. 2n2906dcsm.pdf Size:10K _upd

2N2906DCSM
Dimensions in mm (inches).
Dual Bipolar PNP Devices in a
hermetically sealed
LCC2 Ceramic Surface Mount
Package for High Reliability
1.40 ± 0.15
2.29 ± 0.20 1.65 ± 0.13
(0.055 ± 0.006)
(0.09 ± 0.008) (0.065 ± 0.005)
Applications
2 3
1
4
Dual Bipolar PNP Devices.
A
0.23
6 5
rad.
(0.009) V = 60V
CEO
6.22 ± 0.13 A = 1.27 ± 0.13
I = 0.6A
C
(0.0

 1.5. 2n2906aub.pdf Size:100K _upd

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES LEVELS
JANSM – 3K Rads (Si)
2N2906A 2N2907A
JANSD – 10K Rads (Si)
2N2906AL 2N2907AL
JANSP – 30K Rads (Si)
2N2906AUA 2N2907AUA
JANS

1.6. 2n2906 2n2906a 2.pdf Size:52K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2906; 2N2906A
PNP switching transistors
1997 Jun 02
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
PNP switching transistors 2N2906; 2N2906A
FEATURES PINNING
High current (max. 600 mA)
PIN DESCRIPTION
Low voltage (max. 60 V).
1 emitter
2 ba

1.7. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2904/2N2905
2N2906/2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2904, 2N2905, 2N2906 and 2N2907 are si-
licon planar epitaxial PNP transistors in Jedec TO-
39 (for 2N2904, 2N2905) and in Jedec TO-18 (for
2N2906 and 2N2907) metal cases. They are desi-
gned for high-speed saturated switching and gene-
ral purpose applications.
2N2904/2N2905 approved to CECC 50002-
10

1.8. 2n2906 2n2907.pdf Size:96K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824

1.9. 2n2906a 07a.pdf Size:226K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A
2N2907A
TO-18
Switching And Linear Application DC to VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL 2N2906A, 07A UNIT
Collector -Emitter Voltage VCEO 60 V
Collector -Base Voltage VCBO 60 V
Emitter -Base Voltage VEBO 5.0 V

1.10. 2n2906 7.pdf Size:141K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907
TO-18
Metal Can Package
Switching and Linear Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
VCEO
Collector Emitter Voltage 40 V
VCBO
Collector Base Voltage 60 V
VEBO
Emitter Base Voltage 5 V
IC
Collector Current Co

1.11. 2n2906u.pdf Size:52K _kec

SEMICONDUCTOR 2N2906U
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
B1
FEATURES
DIM MILLIMETERS
1 6
_
Low Leakage Current A 2.00 + 0.20
_
2 5 A1 1.3 + 0.1
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
_
B 2.1 + 0.1
3 4 D _
B1 1.25 + 0.1
@VCE=-30V, VEB=-3V.
C 0.65
Excellent DC Current Gain Linearity.
D 0.2+0.10/-0.05
G 0-0.1
Low

1.12. 2n2906e.pdf Size:50K _kec

SEMICONDUCTOR 2N2906E
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION. B
B1
FEATURES
1 6 DIM MILLIMETERS
Low Leakage Current _
A 1.6 + 0.05
_
A1 1.0 + 0.05
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
2 5
_
B 1.6 + 0.05
_
B1 1.2 + 0.05
@VCE=-30V, VEB=-3V.
C 0.50
3 4
Excellent DC Current Gain Linearity.
_
D 0.2 + 0.05
_
H 0.5 + 0.0

BTP2907AN3 Datasheet (PDF)

1.1. btp2907an3.pdf Size:258K _cystek

Spec. No. : C317N3
Issued Date : 2003.06.30
CYStech Electronics Corp.
Revised Date : 2008.03.21
Page No. : 1/6
General Purpose PNP Epitaxial Planar Transistor
BTP2907AN3
Description
• The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the
SOT-23 package which is designed for low power surface mount applications.
• Low V
CE(sat)
•

2.1. btp2907a3.pdf Size:173K _cystek

Spec. No. : C317A3-H
Issued Date : 2002.06.11
CYStech Electronics Corp.
Revised Date : 2005.06.29
Page No. : 1/5
General Purpose PNP Epitaxial Planar Transistor
BTP2907A3
Description
• The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power
applications.
• Low collector saturation voltage
• High speed switching.
• Complementa

2.2. btp2907al3.pdf Size:192K _cystek

Spec. No. : C317L3-H
Issued Date : 2003.04.15
CYStech Electronics Corp.
Revised Date : 2006.07.04
Page No. : 1/5
General Purpose PNP Epitaxial Planar Transistor
BTP2907AL3
Description
• The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the
SOT-223 package which is designed for medium power surface mount applications.
• Low V
CE(sat)

Биполярный транзистор PN2907A — описание производителя. Основные параметры. Даташиты.

Наименование производителя: PN2907A

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.4
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.8
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 200
MHz

Ёмкость коллекторного перехода (Cc): 8
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO92

PN2907A
Datasheet (PDF)

1.1. pn2907a.pdf Size:61K _st

PN2907A

SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Ordering Code Marking Package / Shipment
PN2907A PN2907A TO-92 / Bulk
PN2907A-AP PN2907A TO-92 / Ammopack
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE NPN COMPLEMENTARY TYPE IS
PN2222A
TO-92 TO-92
APPLICATIONS
Bulk Ammopack
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPME

1.2. pzt2907a pn2907a mmbt2907a.pdf Size:97K _fairchild_semi

PN2907A MMBT2907A PZT2907A
C
C
E
E
C
B
C TO-92
B
SOT-23
B SOT-223
E
Mark: 2F
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO C

 1.3. pn2907a to-92.pdf Size:245K _mcc

MCC
TM Micro Commercial Components
20736 Marilla Street Chatsworth
PN2907A
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Through Hole Package
Capable of 600mWatts of Power Dissipation and 600mA Ic
PNP General
Lead Free Finish/RoHS Compliant («P» Suffix designates
Purpose Amplifier
RoHS Compliant. See ordering information)
Marking

1.4. pn2907a.pdf Size:100K _onsemi

PN2907A
Preferred Device
General Purpose Transistor
PNP Silicon
Features
These are Pb-Free Devices*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector — Emitter Voltage VCEO -60 Vdc
Collector — Base Voltage VCBO -60 Vdc
1
EMITTER
Emitter — Base Voltage VEBO -5.0 Vdc
Collector Current — Continuous IC -600 mAdc
Total Device Dissipation @ TA =

 1.5. pn2907a.pdf Size:314K _utc

UNISONIC TECHNOLOGIES CO., LTD
PN2907A PNP SILICON TRANSISTOR
PNP GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
This UTC PN2907A is designed for use as a general purpose
amplifier and switch requiring collector currents to 600 mA.
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Plating Halogen Free 1 2 3
PN2907AL-AB3-R PN2907AG-AB3-R SOT-89 B C E Tap

1.6. hpn2907a.pdf Size:51K _hsmc

Spec. No. : HE6105
HI-SINCERITY
Issued Date : 1992.09.09
Revised Date : 2004.12.15
MICROELECTRONICS CORP.
Page No. : 1/5
HPN2907A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2907A is designed for general purpose amplifier and high speed,
medium-power switching applications.
Features
TO-92
• Low Collector Saturation voltage
• High Speed Switching
• For Complementary U

Другие транзисторы… PN2904A
, PN2905
, PN2905A
, PN2906
, PN2906A
, PN2906AR
, PN2906R
, PN2907
, BC237
, PN2907AR
, PN2907R
, PN2923
, PN2924
, PN2925
, PN2926
, PN3013
, PN3053
.

KMBT2907 Datasheet (PDF)

1.1. kmbt2907a.pdf Size:775K _update

e s st s
PNP Transistors
MMBT2907A (KMBT2907A)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■
●
● 1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO -60
Collector — Emitter Voltage VCEO -60 V
Emitter — Base Voltage VEBO -5
Collector C

1.2. kmbt2907at.pdf Size:610K _update

SMD Type Transistors
PNP Transistors
MMBT2907AT (KMBT2907AT)
SOT-523 U nit: m m
+0.
1
1.6 -0.
1
+0.1
1.0 -0.1
+0.05
0.2 -0.05 0.15±0.05
■ Features
2 1
● Small Package
● Complementary to MMBT2222AT
3
0.3±0.05
+0.1
0.5-0.1
1. Base
2. Emitter
3. Collecter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO -60
Col

 1.3. kmbt2907.pdf Size:195K _update

SMD Type Transistors
Product specification
KMBT2907
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
■ Features
3
● Collector Current to Continuous :IC=-600mA
● Power Dissipation :PD=250mW
1 2
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -60 V
Collec

Биполярный транзистор KTN2907A — описание производителя. Основные параметры. Даташиты.

Наименование производителя: KTN2907A

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 200
MHz

Ёмкость коллекторного перехода (Cc): 8
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO92

KTN2907A
Datasheet (PDF)

1.1. ktd1555 ktd1582 ktd1947 ktd686 ktn2222 ktn2222a ktn2369 ktn2369a ktn2907 ktn2907a mpsa92 mpsa93.pdf Size:495K _update_bjt



1.2. ktn2907ae.pdf Size:83K _kec

SEMICONDUCTOR KTN2907AE
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES
B
Low Leakage Current
D
DIM MILLIMETERS
: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.
2
_
+
A 1.60 0.10
Low Saturation Voltage _
+
B 0.85 0.10
3
1
_
C 0.70 0.10
+
: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.
D 0.27+0.10/-0.05
_
Complementar

 3.1. ktn2907 a.pdf Size:379K _kec

SEMICONDUCTOR KTN2907/A
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.
N DIM MILLIMETERS
Low Saturation Voltage
A 4.70 MAX
E
K
: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. B 4.80 MAX
G
C 3.70 MAX
D
Complementary to the KTN2222/2222A.
D 0.45
E 1.00

3.2. ktn2907s as.pdf Size:577K _kec

SEMICONDUCTOR KTN2907S/AS
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
·Low Leakage Current
_
+
2.93 0.20
A
B 1.30+0.20/-0.15
: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.
C 1.30 MAX
2
·Low Saturation Voltage 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

 3.3. ktn2907u au.pdf Size:43K _kec

SEMICONDUCTOR KTN2907U/AU
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES
M B M
DIM MILLIMETERS
·Low Leakage Current
_
A
+
2.00 0.20
D
2
: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.
_
+
B 1.25 0.15
_
+
C 0.90 0.10
·Low Saturation Voltage
3
1
D 0.3+0.10/-0.05
_
E +
: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15

Другие транзисторы… KTN2222A
, KTN2222AS
, KTN2222S
, KTN2369
, KTN2369A
, KTN2369S
, KTN2369U
, KTN2907
, BU808DFI
, KTN2907AS
, KTN2907S
, KTN2907U
, KTP5513
, KTS394A
, KTS394B
, KU601
, KU602
.

Биполярный транзистор P2N2907A — описание производителя. Основные параметры. Даташиты.

Наименование производителя: P2N2907A

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 200
MHz

Ёмкость коллекторного перехода (Cc): 8
pf

Статический коэффициент передачи тока (hfe): 75

Корпус транзистора: TO-92

P2N2907A
Datasheet (PDF)

1.1. mtp2n2907a.pdf Size:240K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2907A/D
Amplifier Transistor
PNP Silicon
P2N2907A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 60 Vdc 3
CollectorBase Voltage VCBO 60 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 5.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 m

1.2. p2n2907a.pdf Size:162K _onsemi

P2N2907A
Amplifier Transistor
PNP Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
Rating Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO —60 Vdc
Collector—Base Voltage VCBO —60 Vdc
3
Emitter—Base Voltage VEBO —5.0 Vdc
EMITTER
Collector Current — Continuous IC —600 mAdc
Total Device Dissipation @ TA =25C PD 625 mW
Dera

 3.1. p2n2907 a.pdf Size:91K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907
P2N2907A
TO-92
Plastic Package
E
CB
Designed for switching and linear applications, DC amplifier and driver for industrial applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL P2N2907 P2N2907A UNIT
VCEO

Другие транзисторы… CSDL468
, CSL13003
, CTU83
, CVL639
, CVL640
, MZT3055
, P2N2369
, P2N2369A
, BC109C
, PN100
, PN200
, 2CF2325
, SL100
, 2N23867
, 2N3055HV
, 2N6371HV
, A1941
.

PZT2907A Datasheet (PDF)

1.1. pzt2907a.pdf Size:139K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by PZT2907AT1/D
PNP Silicon
PZT2907AT1
Epitaxial Transistor Motorola Preferred Device
This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
SOT-223 PACKAGE
designed for medium power surface mount applications.
PNP SILICON
NPN Comple

1.2. pzt2907a pn2907a mmbt2907a.pdf Size:97K _fairchild_semi

PN2907A MMBT2907A PZT2907A
C
C
E
E
C
B
C TO-92
B
SOT-23
B SOT-223
E
Mark: 2F
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO C

 1.3. pzt2907at1.pdf Size:133K _onsemi

PZT2907AT1
Preferred Device
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
http://onsemi.com
applications.
Features
COLLECTOR
2, 4
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave

1.4. pzt2907a.pdf Size:167K _utc

UNISONIC TECHNOLOGIES CO., LTD
PZT2907A Preliminary PNP SILICON TRANSISTOR
PNP GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
This UTC PZT2907A is designed for use as a general purpose
amplifier and switch requiring collector currents to 600 mA.
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
PZT2907AL-AA3-R PZT2907AG-AA3-R SOT-223

 1.5. pzt2907a.pdf Size:291K _secos

PZT2907A
PNP Silicon
Silicon Planar Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-223
DESCRIPTION
? The PZT2907A is designed for general purpose amplifier
and high-speed switching, medium power switching applications.
MARKING
Collector
2907A
Base
????
? = Date code
Millimeter Millimeter

1.6. pzt2907a.pdf Size:332K _lge

PZT2907A
SOT-223 Transistor(PNP)
SOT-223
1. BASE
2. COLLECTOR
1
3. EMITTER
Features
Epitaxial planar die construction
Complementary PNP Type available(PZT2222A)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Volta

1.7. pzt2907a.pdf Size:265K _wietron

PZT2907A
PNP Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4 SOT-223
4
P b Lead(Pb)-Free
1. BASE
BASE
2.COLLECTOR
1
1
3.EMITTER
2
4.COLLECTOR
3
3
EM ITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol
Value Unit
Collector-Emitter Voltage V
CEO -60 Vdc
Collector-Base Voltage VCBO
Vdc
-60
Emitter-Base Voltage VEBO
-5.0 Vdc
Collector Current (DC) IC(DC)
-600 mAdc
1.

1.8. pzt2907a.pdf Size:427K _kexin

SMD Type Transistors
PNP Transistors
PZT2907A (KZT2907A)
Unit:mm
SOT-223
6.50±0.2
3.00±0.1
4
■ Features
● Epitaxial planar die construction
● Complementary to PZT2222A
1 2 3
0.250
2.30 (typ)
Gauge Plane
1.Base
2.Collector
0.70±0.1
3.Emitter
4.60 (typ)
4.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VC

Биполярный транзистор BTP2907AN3 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BTP2907AN3

Маркировка: 2F

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.225
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 200
MHz

Ёмкость коллекторного перехода (Cc): 8
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT-23

BTP2907AN3
Datasheet (PDF)

1.1. btp2907an3.pdf Size:258K _cystek

Spec. No. : C317N3
Issued Date : 2003.06.30
CYStech Electronics Corp.
Revised Date : 2008.03.21
Page No. : 1/6
General Purpose PNP Epitaxial Planar Transistor
BTP2907AN3
Description
• The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the
SOT-23 package which is designed for low power surface mount applications.
• Low V
CE(sat)
•

2.1. btp2907a3.pdf Size:173K _cystek

Spec. No. : C317A3-H
Issued Date : 2002.06.11
CYStech Electronics Corp.
Revised Date : 2005.06.29
Page No. : 1/5
General Purpose PNP Epitaxial Planar Transistor
BTP2907A3
Description
• The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power
applications.
• Low collector saturation voltage
• High speed switching.
• Complementa

2.2. btp2907al3.pdf Size:192K _cystek

Spec. No. : C317L3-H
Issued Date : 2003.04.15
CYStech Electronics Corp.
Revised Date : 2006.07.04
Page No. : 1/5
General Purpose PNP Epitaxial Planar Transistor
BTP2907AL3
Description
• The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the
SOT-223 package which is designed for medium power surface mount applications.
• Low V
CE(sat)

Другие транзисторы… BTP953L3
, BTP955J3
, BTP955L3
, BTP955M3
, BTP1955L3
, BTP2014L3
, BTP2907A3
, BTP2907AL3
, BC148
, BTP2907SL3
, BTP3906A3
, BTP3906N3
, BTP5401A3
, BTP8550A3
, BTP8550BA3
, BTP8550N3
, BTP9050N3
.

Биполярный транзистор PMBT2907A — описание производителя. Основные параметры. Даташиты.

Наименование производителя: PMBT2907A

Маркировка: 2F_P2F_p2F_p2F_t2F_W2F

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.25
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 200
MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT23

PMBT2907A
Datasheet (PDF)

1.1. pmbt2907ays.pdf Size:261K _upd

PMBT2907AYS
60V, 600 mA, double PNP switching transistor
26 June 2015 Product data sheet
1. General description
Double PNP switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted
Device (SMD) plastic package.
Double NPN complement: PMBT2222AYS
2. Features and benefits
• Double general-purpose switching transistor
• AEC-Q101 qualified
3. Applications
• Switching and

5.1. pmbt2222ays.pdf Size:256K _upd

PMBT2222AYS
40 V, 600 mA, double NPN switching transistor
24 June 2015 Product data sheet
1. General description
Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted
Device (SMD) plastic package.
Double PNP complement: PMBT2907AYS
2. Features and benefits
• Double general-purpose switching transistor
• High current (max. 600 mA)
• Voltage max. 40 V

5.2. pmbt2369.pdf Size:653K _kexin

SMD Type Transistors
NPN Transistors
PMBT2369 (KMBT2369)
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current Capability IC=200mA
● Collector Emitter Voltage VCEO=15V
1 2
+0.1
+0.05
● NPN switching transistor 0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
C
2.Emitter
3.collector
B
E
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rati

Другие транзисторы… PIMN31
, PIMT1
, PMBS3904
, PMBS3906
, PMBT2222
, PMBT2222A
, PMBT2369
, PMBT2907
, 2N3053
, PMBT3906
, PMBT4401
, PMBT4403
, PMBT5550
, PMBT5551
, PMBT6428
, PMBT6429
, PMBTA45
.