Bdw93c

Содержание:

2SC5609 Datasheet (PDF)
2SC5612 Datasheet (PDF)
Биполярный транзистор 2SB1318 — описание производителя. Основные параметры. Даташиты.
2SB1318 Datasheet (PDF)
2SB1344 Datasheet (PDF)
TPT5610 Datasheet (PDF)
13005S Datasheet (PDF)
2SB1560 Datasheet (PDF)
BDW93C Datasheet (PDF)
2SB1182 Datasheet (PDF)

2SC5609 Datasheet (PDF)

1.1. 2sc5609.pdf Size:45K _panasonic

Transistors
2SC5609
Silicon PNP epitaxial planer type
Unit: mm
For general amplification
0.33+0.05 0.10+0.05
0.02 0.02
Complementary to 2SA2021
3
Features
High foward current transfer ratio hFE 0.23+0.05 1 2
0.02
(0.40) (0.40)
SSS-mini type package, allowing downsizing and thinning of the
0.800.05
equipment and automatic insertion through the tape packing
1.200.05
5?
A

4.1. 2sc5607.pdf Size:30K _sanyo

Ordering number : ENN6403A
2SC5607
NPN Epitaxial Planar Silicon Transistor
2SC5607
DC / DC Converter Applications
Applications Package Dimensions
Relay drivers, lamp drivers, motor drivers, strobes. unit : mm
2033A
Features

Adoption of MBIT processes. 2.2
4.0
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
0.4
High

4.2. 2sc5603.pdf Size:96K _nec

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5603
NPN SILICON RF TRANSISTOR
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
High-gain transistor for buffer amplifier : ?S21e?2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted
Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number Qua

4.3. 2sc5606.pdf Size:67K _nec

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
Suitable for high-frequency oscillation
fT = 25 GHz technology adopted
3-pin ultra super minimold
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5606 50 pcs (Non reel) 8 mm wide embossed taping
2SC5606-T1 3 kpcs/reel

4.4. 2sc5600.pdf Size:98K _nec

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5600
NPN SILICON RF TRANSISTOR
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
Low voltage operation, low phase distortion
Ideal for OSC applications
Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm)
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5600 50 pcs (Non reel) 8 mm wide embossed taping
2SC5600-T1 3

4.5. 2sc5602.pdf Size:105K _nec

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5602
NPN SILICON RF TRANSISTOR FOR
LOW NOISE HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
High-gain transistor for buffer amplifier : ?S21e?2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA
fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted
3-pin ultra super minimold package (t = 0.75 mm)
ORDERING INFORMATION

2SC5612 Datasheet (PDF)

C5353 транзистор характеристики

1.1. 2sc5612.pdf Size:341K _toshiba

2SC5612
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5612
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
Unit: mm
High Voltage : VCBO = 2000 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t = 0.15µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 2000 V
Collector-Emitter Voltage VCEO 90

4.1. 2sc5611.pdf Size:41K _sanyo

Ordering number:ENN6336
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2023/2SC5611
60V / 5A High-Speed Switching Applications
Applications Package Dimensions
Various inductance lamp drivers for electrical
unit:mm
equipment.
2165
Inverters, converters (strobes, flash, fluorescent lamp
[2SA2023/2SC5611]
lighting circuit).
8.0
4.0
Power amplifier (high-power car stereo, motor

4.2. 2sc5610.pdf Size:51K _sanyo

Ordering number:ENN6367
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2022/2SC5610
DC/DC Converter Applications
Applications Package Dimensions
Relay drivers, lamp drivers, motor drivers, strobes. unit:mm
2041A
Features [2SA2022/2SC5610]
4.5
Adoption of MBIT processes.
10.0
2.8
Large current capacitance.
3.2
Low collector-to-emitter saturation voltage.
High-speed sw

4.3. 2sc5615 ne681m13.pdf Size:19K _nec

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE681M13
OUTLINE DIMENSIONS (Units in mm)
FEATURES
PACKAGE OUTLINE M13
NEW MINIATURE M13 PACKAGE:
Small transistor outline
+0.1
+0.1
0.5
0.05
0.150.05 0.3
1.0 X 0.5 X 0.5 mm
Low profile / 0.50 mm package height
1
2
Flat lead style for better RF performance
0.35
HIGH GAIN BANDWIDTH PRODUCT:
+0.1
+0.1
1.0 0.7
0.05 3 3

4.4. 2sc5616 ne688m13.pdf Size:19K _nec

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M13
OUTLINE DIMENSIONS (Units in mm)
FEATURES
PACKAGE OUTLINE M13
NEW MINIATURE M13 PACKAGE:
Small transistor outline
+0.1
+0.1
0.5
0.05
0.150.05 0.3
1.0 X 0.5 X 0.5 mm
Low profile / 0.50 mm package height
1
2
Flat lead style for better RF performance
0.35
HIGH GAIN BANDWIDTH PRODUCT:
+0.1
+0.1
1.0 0.7
0.05 3 3

4.5. 2sc5615.pdf Size:126K _nec

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5615
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
вЂў 1005 package employed (1.0 ? 0.5 ? 0.5 mm)
вЂў NF = 1.4 dB TYP., ?S21e?2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5615 50 pcs (Non reel) вЂў 8 mm wide embossed taping
2SC561

4.6. 2sc5614.pdf Size:137K _nec

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5614
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• NF = 1.4 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-pin lead-less minimold package
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5614 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5614-T3 10 kpcs

4.7. 2sc5618.pdf Size:97K _nec

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5618
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• 3-pin lead-less minimold package
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5618 50 pcs (Non reel) • 8 mm wide embosse

4.8. 2sc5617.pdf Size:103K _nec

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5617
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz
?S21e?2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
3-pin lead-less minimold package
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5617 50 pcs (Non reel) 8 mm wide embossed ta

4.9. ne856m13 2sc5614.pdf Size:19K _nec

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE856M13
OUTLINE DIMENSIONS (Units in mm)
FEATURES
PACKAGE OUTLINE M13
NEW MINIATURE M13 PACKAGE:
Small transistor outline
+0.1
+0.1
0.5
0.05
1.0 X 0.5 X 0.5 mm 0.150.05 0.3
Low profile / 0.50 mm package height
1
2
Flat lead style for better RF performance
0.35
LOW NOISE FIGURE:
+0.1
+0.1
1.0 0.7
0.05 3 3
0.2
NF =

4.10. 2sc5619.pdf Size:146K _isahaya

〈小信号トランジスタ〉
2SC5619
高周波増幅用
シリコンNPN エピタキシャル形
概要
外形図単位：ｍｍ
2SC5619は、超小形外形樹脂封止形シリコンNPNエピタキシャル
形トランジスタです。
2.5
高ｆTであり、また、コレクタ損失が大きく、ディスプレイモニター用
1.5 0.5
0.5
等として最

Биполярный транзистор 2SB1318 — описание производителя. Основные параметры. Даташиты.

Характеристики транзистора 2n5551

Наименование производителя: 2SB1318

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 1
W

Макcимально допустимое напряжение коллектор-база (Ucb): 100
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8
V

Макcимальный постоянный ток коллектора (Ic): 3
A

Предельная температура PN-перехода (Tj): 175
°C

Статический коэффициент передачи тока (hfe): 10000

Корпус транзистора: SOT33

2SB1318
Datasheet (PDF)

2n2222a datasheet, equivalent, cross reference search

1.1. 2sb1318.pdf Size:120K _nec

4.1. 2sb1580 2sb1316 2sb1567.pdf Size:64K _rohm

2SB1580 / 2SB1316 / 2SB1567
Transistors
Power Transistor (-100V , -2A)
2SB1580 / 2SB1316 / 2SB1567
Features External dimensions (Units : mm)
1) Darlington connection for high DC current gain.
2SB1580
4.0
2) Built-in resistor between base and emitter.
1.0 2.5 0.5
3) Built-in damper diode.
(1)
4) Complements the 2SD2195 / 2SD1980 / 2SD2398.
(2)
(3)
(1) Base(Gate)
(2) Collector(Drain

4.2. 2sb1316.pdf Size:124K _rohm

2SB1316
Transistors
Power Transistor (-100V , -2A)
2SB1316
External dimensions (Unit : mm)
Features
1) Darlington connection for high DC current gain.
2SB1580
4.0
2) Built-in resistor between base and emitter.
1.0 2.5 0.5
3) Built-in damper diode.
(1)
4) Complements the 2SD2195 / 2SD1980.
(2)
(3)
(1) Base
(2) Collector
Absolute maximum ratings (Ta = 25C)
ROHM : MP

4.3. 2sb1319 e.pdf Size:41K _panasonic

Transistor
2SB1319
Silicon PNP epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9 0.1 2.5 0.1
1.5
1.5 R0.9 1.0
Features
R0.9
Low collector to emitter saturation voltage VCE(sat).
Large collector current IC.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.85
0.55 0.1 0.45 0.05
Absolut

4.4. 2sb1317.pdf Size:54K _panasonic

Power Transistors
2SB1317
Silicon PNP triple diffusion planar type
For high power amplification
Unit: mm
Complementary to 2SD1975
? 3.3 0.2
20.0 0.5 5.0 0.3
3.0
Features
Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
Wide area of safe operation (ASO)
1.5
High transition frequency fT
Optimum for the output stage of a HiFi audio amplifier

4.5. 2sb1319.pdf Size:37K _panasonic

4.6. 2sb1314.pdf Size:120K _isahaya

ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
http://www.idc-com.co.jp
6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN
??Keep safety in your circuit designs !
?
Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur with them. Trouble with semicondu

4.7. 2sb1317.pdf Size:219K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1317
DESCRIPTION
·Good Linearity of h
FE
·Wide Area of Safe Operation
·High DC Current-Gain Bandwidth Product
·Complement to Type 2SD1975
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High power amplification
·Optimum for the output stage of a Hi-Fi audio amplifier.
ABSOLUTE MAXIMUM RATING

4.8. 2sb1316.pdf Size:216K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1316
DESCRIPTION
·Darlington connection for high DC current gain
·Built in resistor between base and emitter
·Built in damper diode
·Complementary NPN types:2SD1980
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RA

4.9. 2sb1315.pdf Size:223K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1315
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -120V(Min)
(BR)CEO
·Good Linearity of h
FE
·Complement to Type 2SD1977
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio frequency power amplifier applications
·Recommend for 45-55W audio frequency amplifier
output stage applic

Другие транзисторы… 2SB1310
, 2SB1311
, 2SB1312
, 2SB1313
, 2SB1314
, 2SB1315
, 2SB1316
, 2SB1317
, 2N2907
, 2SB1319
, 2SB131A
, 2SB132
, 2SB1320
, 2SB1321
, 2SB1322
, 2SB1323
, 2SB1324
.

2SB1344 Datasheet (PDF)

1.1. 2sb1344.pdf Size:38K _rohm

2SB1344
Transistors
Transistors
2SD2025
(94L-374-B403)
(94L-969-D403)
299

1.2. 2sb1344.pdf Size:214K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1344
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -100V(Min)
(BR)CEO
·High DC Current Gain-
: h = 1000(Min)@ (V = -3V, I = -2A)
FE CE C
·Complement to Type 2SD2025
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM

4.1. 2sb1340.pdf Size:38K _rohm

2SB1340
Transistors
Transistors
2SD1889
(96-650-B88)
(96-765-D88)
288

4.2. 2sb1342.pdf Size:39K _rohm

2SB1474 / 2SB1342
Transistors
Transistors
2SD1933
(94S-181-B400)
(94L-906-D400)
298

4.3. 2sb1340 1-2.pdf Size:58K _rohm

4.4. 2sb1347.pdf Size:53K _panasonic

Power Transistors
2SB1347
Silicon PNP triple diffusion planar type
For high power amplification
Unit: mm
Complementary to 2SD2029
? 3.3 0.2
20.0 0.5 5.0 0.3
3.0
Features
Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
Wide area of safe operation (ASO)
1.5
High transition frequency fT
Optimum for the output stage of a HiFi audio amplifier

4.5. 2sb1340.pdf Size:214K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1340
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -120V(Min)
(BR)CEO
·High DC Current Gain-
: h = 2000(Min)@ (V = -3V, I = -2A)
FE CE C
·Complement to Type 2SD1889
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage -120 V
CB

4.6. 2sb1347.pdf Size:219K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1347
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -160V(Min)
(BR)CEO
·Wide Area of Safe Operation
·Complement to Type 2SD2029
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Optimum for the output stage of a HiFi audio amplifier
ABSOLUTE MAXIMUM RATING

4.7. 2sb1341.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1341
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -80V(Min)
(BR)CEO
·High DC Current Gain-
: h = 1000(Min)@ (V = -3V, I = -2A)
FE CE C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL P

4.8. 2sb1342.pdf Size:215K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1342
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -80V(Min)
(BR)CEO
·High DC Current Gain-
: h = 1000(Min)@ (V = -3V, I = -2A)
FE CE C
·Complement to Type 2SD1933
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM

4.9. 2sb1345.pdf Size:218K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1345
DESCRIPTION
·Low Collector Saturation Voltage-
: V = -2.0V(Min) @I = -5A
CE(sat) C
·Good Linearity of h
FE
·Complement to Type 2SD2062
·With TO-3PN package
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power driver and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

4.10. 2sb1346.pdf Size:217K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1346
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -60V(Min)
(BR)CEO
·Good Linearity of h
FE
·Wide Area of Safe Operation
·Complement to Type 2SD2027
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAX

4.11. 2sb1343.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1343
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -100V(Min)
(BR)CEO
·High DC Current Gain-
: h = 1000(Min)@ (V = -3V, I = -2A)
FE CE C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL

TPT5610 Datasheet (PDF)

1.1. tpt5610.pdf Size:186K _lge

TPT5610
TO-92L Transistor (PNP)
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
4.700
5.100
2 3
1
Features
Excellent linearity of Current Gain
7.800
8.200
Low saturation voltage
0.600
Complementary to TPT5609
0.800
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
0.350
0.550
13.800
VCBO -25 V
Collector- Base Voltage
14.200
VCEO -20 V
Co

5.1. tpt5609.pdf Size:216K _update

MCC
Micro Commercial Components
TM
20736 Marilla Street Chatsworth TPT5609
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Excellent linearity of Current Gain
NPN Epitaxial
Low saturation voltage
Silicon Transistor
Maximum Ratings
Symbol Rating Rating Unit
TO-92L
VCEO Collector-Emitter Voltage 20 V
VCBO Collector-Base Voltage 25 V

5.2. tpt5609.pdf Size:206K _lge

TPT5609
TO-92L Transistor (NPN)
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
4.700
2 3 5.100
1
Features
Excellent linearity of Current Gain
7.800
8.200
Low saturation voltage

Complementary to TPT5610 0.600

0.800
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
0.350
0.550
13.800
VCBO 25 V
Collector- Base Voltage
14.200
VCEO 20 V
Colle

13005S Datasheet (PDF)

1.1. sbp13005s.pdf Size:158K _update

SemiWell Semiconductor
SBP13005-S
High Voltage Fast Switching NPN
Power Transistor
Features
◆ Very High Switching Speed
◆ Minimum lot to lot hFE Variation
◆ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings

1.2. apt13005si-stf-su.pdf Size:419K _update

Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S
General Description Features
The APT13005S is a high voltage, high speed, high
· High Switching Speed
efficiency switching transistor, and it is specially
· High Collector-Emitter Voltage: 700V
designed for off-line switch mode power supplies with
· Low Cost
low output power.
· High Efficiency
The APT13005S

1.3. 13005sdl.pdf Size:122K _jdsemi

R
13005SDL
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Mainly used for 110V power Fluorescent Lamp、
Electronic Ballast，etc
2．
2．
2

1.4. 13005s.pdf Size:114K _jdsemi

R
13005S
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Fluorescent Lamp、Electronic Ballast、
Charger and Switch-mode power supplies
2．
2

1.5. 13005sd.pdf Size:117K _jdsemi

R
13005SD
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Fluorescent Lamp、Electronic Ballast、
and Switch-mode power supplies
2．
2．
2．

1.6. e13005sdl.pdf Size:123K _jdsemi

R
E13005SDL
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Mainly used for 110V power Fluorescent Lamp、
Electronic Ballast，etc
2．
2．
2

1.7. apt13005si-stf-su.pdf Size:419K _bcdsemi

2SB1560 Datasheet (PDF)

1.1. 2sb1560.pdf Size:186K _jmnic

JMnic Product Specification
Silicon PNP Darlington Power Transistors 2SB1560
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD2390
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDI

1.2. 2sb1560.pdf Size:29K _sanken-ele

E
(70?)
B
Darlington 2SB1560
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
Application : Audio, Series Regulator and General Purpose
External Dimensions MT-100(TO3P)
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)
Ratings
Symbol Unit Symbol Conditions Ratings Unit
0.2
4.8
0.4
15.6
VCBO 160 VCB=160V 100max A

1.3. 2sb1560.pdf Size:222K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1560
DESCRIPTION
·High DC Current Gain-
: h = 5000(Min)@I = -7A
FE C
·Low-Collector Saturation Voltage-
: V = -2.5V(Max.)@I = -7A
CE(sat) C
·Complement to Type 2SD2390
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio, series regulator and general purpose
applicati

BDW93C Datasheet (PDF)

1.1. bdw93cfp bdw94cfp.pdf Size:91K _update

BDW93CFP
BDW94CFP

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
MONOLITHIC DARLINGTON
CONFIGURATION
COMPLEMENTARY PNP — NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
FULLY MOLDED INSULATED PACKAGE
2000 V DC INSULATION (U.L. COMPLIANT)
3
2
1
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
T0-220FP
EQUIPMENT

1.2. bdw93cf.pdf Size:41K _fairchild_semi

BDW93CF
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94CF respectively
TO-220F
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
IC Collector Current (DC) 12 A
I

1.3. bdw93 bdw93a bdw93b bdw93c.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor BDW93/A/B/C
DESCRIPTION
·Collector Current -I = 12A
C
·Collector-Emitter Sustaining Voltage-
: V = 45V(Min)- BDW93; 60V(Min)- BDW93A
CEO(SUS)
80V(Min)- BDW93B; 100V(Min)- BDW93C
·Complement to Type BDW94/A/B/C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for hammer drivers, audio ampl

1.4. bdw93cfp.pdf Size:191K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor BDW93CFP
DESCRIPTION
·With TO-220F packaging
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Complement to Type BDW94CFP
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·AC-DC motor control
·Elec

1.5. bdw93c.pdf Size:191K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor BDW93C
DESCRIPTION
·With TO-220 packaging
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Complement to Type BDW94C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·AC-DC motor control
·Electroni

1.6. hbdw93c.pdf Size:140K _shantou-huashan

NPN DARLINGTON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HBDW93C
█ APPLICATIONS
Power Linear And Switching Applicatione.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-220
Tstg——Storage Temperature………………………… -65~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）………

2SB1182 Datasheet (PDF)

1.1. 2sb1182p-q-r.pdf Size:39K _update

SMD Type Transistors
Medium Power Transistor
2SB1182
TO-252
Unit: mm
Features
+0.15 +0.1
6.50-0.15 2.30-0.1
+0.2 +0.8
5.30-0.2 0.50-0.7
Low VCE(sat).
Epitaxial planar type
PNP silicon transistor
0.127
+0.1 max
0.80-0.1
+0.1
2.3 0.60-0.1
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-base voltage VCBO

1.2. 2sb1182gp.pdf Size:80K _update

CHENMKO ENTERPRISE CO.,LTD
2SB1182GP
SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 32 Volts CURRENT 2 Ampere
APPLICATION
* Power driver and Dc to DC convertor .
FEATURE
* Small flat package. (DPAK)
DPAK
* PC= 1.5 W (mounted on ceramic substrate).
* High saturation current capability.
.094 (2.38)
CONSTRUCTION
.086 (2.19)
.022 (0.55)
* PNP Switching Transistor
.018 (0.45)
(1) (3

1.3. 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf Size:130K _rohm

Transistors
Medium power Transistor(*32V,*2A)
2SB1188 / 2SB1182 / 2SB1240 /
2SB822 / 2SB1277 / 2SB911M
FFeatures FExternal dimensions (Unit: mm)
1) Low VCE(sat).
VCE(sat) = *0.5V (Typ.)
(IC / IB = *2A / *0.2A)
2) Complements the 2SD1766 /
2SD1758 / 2SD1862 / 2SD1189F /
2SD1055 / 2SD1919 / SD1227M.
FStructure
Epitaxial planar type
PNP silicon transistor
(96-131-B24)
215
2SB1188 / 2

1.4. 2sb1182 2sb1240.pdf Size:147K _rohm

Medium power transistor (?32V, ?2A)
2SB1182 / 2SB1240
?Features ?Dimensions (Unit : mm)
1) Low VCE(sat).
2SB1182 2SB1240
VCE(sat) = ?0.5V (Typ.)
2.50.2
6.80.2
(IC/IB = ?2A / ?0.2A)
2.3+0.2
6.50.2
-0.1
C0.5
2) Complements 2SD1758 / 2SD1862.
5.1+0.2
-0.1 0.50.1
0.65Max.
0.650.1
?Structure 0.75
0.9
0.50.1
Epitaxial planar type
0.550.1
PNP silicon transistor 2.30

1.5. 2sb1182.pdf Size:160K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SB1182 PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
1
TO-252
DESCRIPTION
The UTC 2SB1182 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
ORDERING INFORMATION
Ordering Number Pin Assignment

1.6. 2sb1182.pdf Size:238K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor 2SB1182
DESCRIPTION
·Small and slim package
·100% tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power dissipation
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage -40 V
CBO
V Collector-Emitter Voltage -32 V
CEO
V Emitter-

1.7. 2sb1182.pdf Size:181K _lge

2SB1182(PNP)
TO-251/TO-252-2L Transistor
TO-251
1.BASE
2.COLLECTOR
3EMITTER
1 2 3
Features

Power dissipation
MAXIMUM RATINGS (TA=25? unless otherwise noted)
TO-252-2L
Symbol Parameter Value Units
VCBO Collector- Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -2 A
PC Collector Power Dissipation 1

1.8. 2sb1182.pdf Size:1117K _wietron

2SB1182
PNP PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE
3
2.COLLECTOR
2
3.EMITTER 1
D-PAK(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA=25?C)
Rating Symbol Limits Unit
VCBO V
Collector-Base Voltage
-40
VCEO
V
Collector-Emitter Voltage -32
VEBO
V
Emitter-Base Voltage -5.0
Collector Current
IC A
-2.0
Collector Power Dissipation PD 1.5 W
Junction Temperature
Tj
+150
?C

1.9. 2sb1182.pdf Size:1212K _kexin

SMD Type Transistors
PNP Transistors
2SB1182
TO-252
Unit: mm
+0.15
6.50-0.15
+0.1
■ Features
2.30 -0.1
+0.2
5.30-0.2 +0.8
0.50 -0.7
● Low VCE(sat).VCE(sat) = -0.5V
● Complementary to 2SD1758
0.127
+0.1
0.80-0.1
max
+ 0.1
1 Base
2.3 0.60- 0.1
+0.15
4 .60 -0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector